Bulk acoustic wave resonators employing materials with piezoelectric and negative piezoelectric coefficients
View Patent ↗Bulk acoustic wave resonators are presented. Such resonators typically operate based on a dynamic nonuniform effective piezoelectricity in composite multilayer ferroelectrics with large electrostriction coefficients, like barium strontium titanate (BST). Harmonic resonance modes of a multilayer bulk acoustic wave resonator can be selectively excited with an electromechanical coupling coefficient equal to the fundament mode, which is contrary to the trend K2∝1/n2 exhibited by conventional piezoelectric bulk acoustic resonators. Such a resonator allows for the design of a new class of band-switching filters.
1. A bulk acoustic wave resonator designed to excite a particular resonance harmonic mode, comprising;
a first electrode;
a second electrode; and
a transduction structure fabricated on a substrate, the transduction structure comprised of N layers of piezoelectric material with values of piezoelectric coefficients configured to mimic shape of the particular resonance harmonic mode, where at least three of the N layers of piezoelectric materials having piezoelectric coefficients different from each other, where the resonator is configured to exhibit an electromechanical coupling coefficient that remains constant between a fundamental mode and a nth resonance harmonic mode of the resonator;
wherein the first electrode and the second electrode are disposed on same side of the transduction structure to laterally excite the resonator, thereby forming a laterally excited bulk acoustic wave resonator (XBAR).
2. The bulk acoustic wave resonator of claim 1 wherein the first electrode and the second electrode are configured to receive an electric signal and the transduction structure converts the electric signal to an acoustic wave within the resonator.
3. The bulk acoustic wave resonator of claim 1 wherein at least one of the N layers of piezoelectric material exhibits a negative piezoelectric effect.
4. The bulk acoustic wave resonator of claim 1 wherein the N layers of piezoelectric material are in direct contact with each other.
5. The bulk acoustic wave resonator of claim 1 further comprises a bias electrode disposed between two of the N layers of piezoelectric material and configured to receive a bias voltage.
6. The bulk acoustic wave resonator of claim 1 wherein the material for the N layers of piezoelectric material is selected from a group consisting of copper indium thiophosphate, aluminum nitride, scandium aluminum nitride, barium titanate, strontium titanate, barium strontium titanate, lithium niobate, trialkylbenzene tricarboxamide and polyvinylidene fluoride and its copolymers with trifluoroethylene.
7. A bulk acoustic wave resonator, comprising;
a first electrode;
a second electrode; and
a transduction structure fabricated on a substrate, wherein the transduction structure is comprised of N layers of piezoelectric material without any electrodes disposed between the N layer of piezoelectric material, where piezoelectric coefficients of the N layers of piezoelectric material are different from each other and are configured to excite a particular resonance harmonic mode;
wherein the first electrode and the second electrode are disposed on same side of the transduction structure to laterally excite the resonator, thereby forming a laterally excited bulk acoustic wave resonator (XBAR); and
where the resonator is configured to exhibit an electromechanical coupling coefficient that remains ideally constant between a fundamental mode and a for the nth resonance harmonic mode of the resonator.
8. The bulk acoustic wave resonator of claim 7 wherein the resonator is configured to exhibit an electromechanical coupling coefficient that remains theoretically constant for the nth resonance harmonic mode.
9. The bulk acoustic wave resonator of claim 7 wherein at least one of the N layers of piezoelectric material exhibits a negative piezoelectric effect.
10. The bulk acoustic wave resonator of claim 7 wherein the material for the N layers of piezoelectric material is selected from a group consisting of copper indium thiophosphate, aluminum scandium nitride, barium strontium titanate, trialkylbenzene tricarboxamide and polyvinylidene fluoride and its copolymers with trifluoroethylene.
11. A bulk acoustic wave resonator designed to excite a particular resonance harmonic mode, comprising;
a first electrode;
a second electrode; and
a transduction structure fabricated on a substrate, the transduction structure comprised of N layers of piezoelectric material with values of piezoelectric coefficients configured to mimic shape of the particular resonance harmonic mode, where at least one of the N layers of piezoelectric materials exhibits a negative piezoelectric effect and at least three of the N layers of piezoelectric materials have piezoelectric coefficients different from each other, where the resonator is configured to exhibit an electromechanical coupling coefficient that remains constant between a fundamental mode and a nth resonance harmonic mode of the resonator.
12. The bulk acoustic wave resonator of claim 11 is fabricated on a substrate, where a portion of the substrate under the resonator structure is removed, thereby forming a film bulk acoustic resonator (FBAR).
13. The bulk acoustic wave resonator of claim 11 is fabricated on a substrate with a reflector disposed between the resonator structure and the substrate, thereby forming a solidly mounted resonator structure (SMR).
14. The bulk acoustic wave resonator of claim 11 is fabricated on a substrate, where both electrodes are used on one side of the transduction structure to laterally excite the resonator, thereby forming a laterally excited bulk acoustic wave resonator (XBAR).