Acoustic wave device
An acoustic wave device includes a support including a cavity, a piezoelectric layer on or above the support and made of one of lithium niobate or lithium tantalate, an interdigital transducer electrode embedded in the piezoelectric layer and including surfaces opposed to each other in a thickness direction, one of the surfaces being in contact with the piezoelectric layer, and a dielectric film on the piezoelectric layer and covering the interdigital transducer electrode. The interdigital transducer electrode includes electrode fingers, at least one of which overlaps the cavity in plan view. Assuming a thickness of the piezoelectric layer is d and an electrode finger pitch of the interdigital transducer electrode is p, p/d≥about 4.25.
1 . An acoustic wave device comprising:
a support including a cavity;
a piezoelectric layer on or above the support and made of one of lithium niobate or lithium tantalate;
an interdigital transducer electrode embedded in the piezoelectric layer and including surfaces opposed to each other in a thickness direction, one of the surfaces being in contact with the piezoelectric layer; and
a dielectric film on the piezoelectric layer and covering the interdigital transducer electrode; wherein
the interdigital transducer electrode includes a plurality of electrode fingers;
at least one of the plurality of electrode fingers overlaps the cavity in plan view;
assuming a thickness of the piezoelectric layer is d and an electrode finger pitch of the interdigital transducer electrode is p, p/d≥about 4.25; and
an entirety of another one of the surfaces of the interdigital transducer electrode is curved at a portion corresponding to at least one of the plurality of electrode fingers.
2 . A ladder filter comprising:
a series arm resonator; and
a parallel arm resonator; wherein
the series arm resonator and the parallel arm resonator are each the acoustic wave device according to claim 1 ; and
the electrode finger pitch of the interdigital transducer electrode in the series arm resonator is the same or substantially the same as the electrode finger pitch of the interdigital transducer electrode in the parallel arm resonator.
3 . The ladder filter according to claim 2 , wherein the dielectric film is made of silicon oxide.
4 . The ladder filter according to claim 3 , wherein a cut angle of the piezoelectric layer is larger than or equal to about 116° Y and smaller than or equal to about 176° Y.
5 . The ladder filter according to claim 4 , wherein the cut angle of the piezoelectric layer is larger than or equal to about 142°Y and smaller than or equal to about 156° Y.
6 . The ladder filter according to claim 3 , wherein
about 6.25≤p/d≤about 7.0; and
a width of each of the plurality of electrode fingers of the interdigital transducer electrode is greater than or equal to about 0.7 μm and less than or equal to about 1.15 μm.
7 . The ladder filter according to claim 2 , wherein a thickness of the dielectric film in the series arm resonator is different from a thickness of the dielectric film in the parallel arm resonator.
8 . The ladder filter according to claim 2 , wherein the piezoelectric layer is made of lithium niobate.
9 . The ladder filter according to claim 2 , wherein about 5.75≤p/d≤about 6.5.
10 . The ladder filter according to claim 2 , wherein a cross sectional area of each of the plurality of electrode fingers of the interdigital transducer electrode is greater than or equal to about 0.0475 μm 2 and less than or equal to about 0.0525 μm 2 .
11 . The acoustic wave device according to claim 1 , wherein the dielectric film is made of silicon oxide.
12 . The acoustic wave device according to claim 11 , wherein a cut angle of the piezoelectric layer is larger than or equal to about 116°Y and smaller than or equal to about 176° Y.
13 . The acoustic wave device according to claim 12 , wherein the cut angle of the piezoelectric layer is larger than or equal to about 142°Y and smaller than or equal to about 156° Y.
14 . The acoustic wave device according to claim 11 , wherein
about 6.25≤p/d≤about 7.0; and
a width of each of the plurality of electrode fingers of the interdigital transducer electrode is greater than or equal to about 0.7 μm and less than or equal to about 1.15 μm.
15 . The acoustic wave device according to claim 1 , wherein the piezoelectric layer is made of lithium niobate.
16 . The acoustic wave device according to claim 1 , wherein about 5.75≤p/d≤about 6.5.
17 . The acoustic wave device according to claim 1 , wherein a cross sectional area of each of the plurality of electrode fingers of the interdigital transducer electrode is greater than or equal to about 0.0475 μm 2 and less than or equal to about 0.0525 μm 2 .
18 . A ladder filter comprising:
a series arm resonator; and
a parallel arm resonator, wherein
the parallel arm resonator is the acoustic wave device according to claim 1 .
19 . An acoustic wave device comprising:
a support;
a piezoelectric layer on or above the support and made of one of lithium niobate or lithium tantalate;
an interdigital transducer electrode embedded in the piezoelectric layer and including surfaces opposed to each other in a thickness direction, one of the surfaces being in contact with the piezoelectric layer; and
a dielectric film on the piezoelectric layer and covering the interdigital transducer electrode; wherein
the piezoelectric layer includes a cavity;
the interdigital transducer electrode includes a plurality of electrode fingers;
at least one of the plurality of electrode fingers overlaps the cavity in plan view;
assuming a thickness of the piezoelectric layer is d and an electrode finger pitch of the interdigital transducer electrode is p, p/d≥about 4.25;
another one of the surfaces of the interdigital transducer electrode has a recessed shape at a portion corresponding to at least one of the plurality of electrode fingers; and
an entirety of the another one of the surfaces of the interdigital transducer electrode is curved at the portion corresponding to the at least one of the plurality of electrode fingers.
20 . The acoustic wave device according to claim 19 , wherein the dielectric film is made of silicon oxide.