Decoupled transversely-excited film bulk acoustic resonators
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate supported by the substrate. A portion of the piezoelectric plate suspended across a cavity in the substrate forms a diaphragm. A decoupling dielectric layer is on a front surface of the diaphragm. An interdigital transducer (IDT) has interleaved fingers on the decoupling dielectric layer over the diaphragm. The IDT and piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites shear acoustic waves in the diaphragm.
1. A bulk acoustic resonator comprising:
a substrate;
a piezoelectric layer attached directly or by one or more intermediate layers to the substrate, the piezoelectric layer including a diaphragm over a cavity of the bulk acoustic resonator;
a decoupling dielectric layer on a surface of the diaphragm and that extends continuously on the surface of the diaphragm, such that an entirety of the surface of the diaphragm is covered by the decoupling layer; and
an interdigital transducer (IDT) with interleaved fingers on the decoupling layer such that the decoupling layer is between the IDT and the diaphragm of the piezoelectric layer.
2. The bulk acoustic resonator of claim 1 , wherein the IDT and the piezoelectric layer are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the diaphragm, which is also substantially orthogonal to a primary direction of an electric field created between the interleaved fingers of the IDT.
3. The bulk acoustic resonator of claim 1 , wherein the piezoelectric layer is rotated Y-cut lithium niobate.
4. The bulk acoustic resonator of claim 1 , wherein the cavity extends at least partially in the substrate.
5. The bulk acoustic resonator of claim 1 , wherein the decoupling dielectric layer is entirely disposed on a surface of the interleaved fingers of the IDT facing the surface of the diaphragm.
6. The bulk acoustic resonator of claim 1 , wherein the decoupling layer is coupled directly between the diaphragm and the IDT.
7. The bulk acoustic resonator of claim 1 , wherein Euler angles of the piezoelectric layer are 0°, β, 0°, and 30°<β<38°.
8. The bulk acoustic resonator of claim 1 , wherein the decoupling dielectric layer comprises one of silicon dioxide, silicon nitride, and aluminum oxide.
9. The bulk acoustic resonator of claim 1 , further comprising a dielectric layer on the decoupling dielectric layer between the interleaved fingers of the IDT.
10. The bulk acoustic resonator of claim 9 ,
wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, and aluminum oxide, and
wherein the IDT comprises one of aluminum, an aluminum alloy, copper, a copper alloy, beryllium, gold, tungsten, molybdenum, chromium, and titanium.
11. A bulk acoustic resonator comprising:
a substrate;
a piezoelectric layer attached by one or more intermediate layers to the substrate, the piezoelectric layer including a diaphragm over a cavity of the acoustic resonator;
a decoupling dielectric layer on a surface of the diaphragm; and
an interdigital transducer (IDT) with interleaved fingers on the decoupling layer opposite the diaphragm,
wherein a thickness of the piezoelectric layer is greater than or equal to 200 nm and less than or equal to 1000 nm, and
wherein a thickness of the decoupling dielectric layer is greater than or equal to 0.05 times the thickness of the piezoelectric layer and less than or equal to 0.5 times the thickness of the piezoelectric layer.
12. A bulk acoustic resonator comprising:
a substrate;
a piezoelectric layer attached directly or by one or more intermediate layers to the substrate;
a decoupling dielectric layer on the piezoelectric layer, the decoupling dielectric layer extending continuously on a surface of the piezoelectric layer; and
an interdigital transducer (IDT) comprising a plurality of interleaved fingers extending alternately from first and second busbars, overlapping portions of the plurality of interleaved fingers disposed directly on the decoupling layer, such that the decoupling layer is between the interleaved fingers and the surface of the piezoelectric layer,
wherein the decoupling layer extends continuously between the interleaved fingers of the IDT and the piezoelectric layer.
13. The bulk acoustic resonator of claim 12 , wherein the IDT and the piezoelectric layer are configured such that a radio frequency signal applied between the first and second busbars excites a primary shear acoustic mode in the piezoelectric layer, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric layer, which is also substantially orthogonal to a primary direction of an electric field created between the interleaved fingers of the IDT.
14. The bulk acoustic resonator of claim 12 , wherein a portion of the piezoelectric layer forms a diaphragm over a cavity of the acoustic resonator.
15. The bulk acoustic resonator of claim 14 , wherein the cavity extends at least partially in the substrate.
16. The bulk acoustic resonator of claim 12 , wherein the decoupling layer extends continuously on a surface of the diaphragm, such that an entirety of the surface of the diaphragm is covered by the decoupling layer.
17. The bulk acoustic resonator of claim 12 , wherein the decoupling layer is coupled directly between the diaphragm and the IDT.
18. The bulk acoustic resonator of claim 12 , wherein Euler angles of the piezoelectric layer are 0°, β, 0°, and 30°<β<38°.
19. The bulk acoustic resonator of claim 12 ,
wherein a thickness of the piezoelectric layer is greater than or equal to 200 nm and less than or equal to 1000 nm, and
wherein a thickness of the decoupling dielectric layer is greater than or equal to 0.05 times the thickness of the piezoelectric layer and less than or equal to 0.5 times the thickness of the piezoelectric layer.
20. The bulk acoustic resonator of claim 12 , further comprising:
a dielectric layer on the decoupling dielectric layer and between the interleaved fingers of the IDT,
wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, and aluminum oxide, and
wherein the IDT comprises one of aluminum, an aluminum alloy, copper, a copper alloy, beryllium, gold, tungsten, molybdenum, chromium, and titanium.