Acoustic wave device, multiplexer, and communication apparatus
An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer configured by a single crystal of LiTaO 3 on the multilayer film, and an IDT electrode on the LT layer. The thickness of the LT layer is 0.3λ or less where λ is two times a pitch p of electrode fingers in the IDT electrode. Euler angles of the LT layer are (0°±20°, −5° to 65°, 0°±10°), (−120°±20°, −5° to 65°, 0°±10°), or (120°±20°, −5° to 65°, 0°±10°). The multilayer film configured by alternately stacking at least one first layer and at least one second layer. The first layer is comprised of SiO 2 . The second layer is comprised of any one of Ta 2 O 5 , HfO 2 , ZrO 2 , TiO 2 , and MgO.
1. An acoustic wave device comprising:
a substrate,
a multilayer film on the substrate,
an LT layer configured by a single crystal of LiTaO 3 on the multilayer film, and
an IDT electrode on the LT layer, wherein
a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
Euler angles of the LT layer are
(0°±20°, −5° to 65°, 0°±10°),
(−120°±20°, −5° to 65°, 0°±10°),
(120°±20°, −5° to 65°, 0°±10°),
the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
the first layer is comprised of SiO 2 , and
the second layer is comprised of any one of Ta 2 O 5 , HFO 2 , ZrO 2 , TiO 2 , and MgO, wherein:
the second layer is comprised of HFO 2 ,
the thickness of the LT layer is 0.1375λ to 0.1875λ,
a thickness of the first layer is 0.05λ to 0.13λ, and
a thickness of the second layer is 0.04λ to 0.11λ.
2. An acoustic wave device comprising:
a substrate,
a multilayer film on the substrate,
an LT layer configured by a single crystal of LiTaO 3 on the multilayer film, and
an IDT electrode on the LT layer, wherein
a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
Euler angles of the LT layer are
(0°±20°, −5° to 65°, 0°±10°),
(−120°±20°, −5° to 65°, 0°±10°),
(120°±20°, −5° to 65°, 0°±10°),
the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
the first layer is comprised of SiO 2 , and
the second layer is comprised of any one of Ta 2 O 5 , HFO 2 , ZrO 2 , TiO 2 , and MgO, wherein:
the second layer is comprised of Ta 2 O 5 ,
the thickness of the LT layer is 0.19λ to 0.21λ,
a thickness of the first layer is 0.07λ to 0.13λ, and
a thickness of the second layer is 0.95λ to 1.00λ.
3. The acoustic wave device according to claim 2 , wherein the Euler angles of the LT layer are (0°±20°, −18° to 34°,0°±10°), (−120°±20°, −18° to 34°), or (120°±20°, −18° to 34, 120°±10°).
4. An acoustic wave device comprising:
a substrate,
a multilayer film on the substrate,
an LT layer configured by a single crystal of LiTaO 3 on the multilayer film, and
an IDT electrode on the LT layer, wherein
a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
Euler angles of the LT layer are
(0°±20°, −5° to 65°, 0°±10°),
(−120°±20°, −5° to 65°, 0°±10°),
(120°±20°, −5° to 65°, 0°±10°),
the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
the first layer is comprised of SiO 2 , and
the second layer is comprised of any one of Ta 2 O 5 , HFO 2 , ZrO 2 , TiO 2 , and MgO, wherein:
the second layer is comprised of Ta 2 O 5 ,
the thickness of the LT layer is 0.165λ to 0.185λ,
a thickness of the first layer is 0.06λ to 0.13λ, and
a thickness of the second layer is 0.31λ to 0.34λ.
5. The acoustic wave device according to claim 4 , wherein the Euler angles of the LT layer are (0°±20°, −4° to 50°, 0°±10°), (−120°±20°, −4° to 50°, 0°±10°), or (120°±20°, −4° to 50, 0°±10°).
6. An acoustic wave device comprising:
a substrate,
a multilayer film on the substrate,
an LT layer configured by a single crystal of LiTaO 3 on the multilayer film, and
an IDT electrode on the LT layer, wherein
a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
Euler angles of the LT layer are
(0°±20°, −5° to 65°, 0°±10°),
(−120°±20°, −5° to 65°, 0°±10°),
(120°±20°, −5° to 65°, 0°±10°),
the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
the first layer is comprised of SiO 2 , and
the second layer is comprised of any one of Ta 2 O 5 , HFO 2 , ZrO 2 , TiO 2 , and MgO, wherein:
the second layer is comprised of Ta 2 O 5 ,
the thickness of the LT layer is 0.15λ to 0.205λ,
a thickness of the first layer is 0.0625λ to 0.1375λ, and
a thickness of the second layer is 0.0625λ to 0.10λ.
7. The acoustic wave device according to claim 6 , wherein the Euler angles of the LT layer are wherein the Euler angles of the LT layer are (0°±20°, −5° to 65°, 0°±10°), (−120°±20°, −5° to 65°, 0°±10°), or (120°±20°, −5° to 65, 0°±10°).
8. The acoustic device according to claim 1 , wherein thicknesses of the plurality of electrode fingers are 0.02λ to 0.085λ.
9. The acoustic wave device according to claim 1 , wherein the Euler angles of the LT layer are wherein the Euler angles of the LT layer are (0°±20°, −5° to 65°, 0°±10°), (−120°±20°, −5° to 65°, 0°±10°), or (120°±20°, −5° to 65, 0°±10°).
10. An acoustic wave device comprising:
a substrate,
a multilayer film on the substrate,
an LT layer configured by a single crystal of LiTaO 3 on the multilayer film, and
an IDT electrode on the LT layer, wherein
a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
Euler angles of the LT layer are
(0°±20°, −5° to 65°, 0°±10°),
(−120°±20°, −5° to 65°, 0°±10°),
(120°±20°, −5° to 65°, 0°±10°),
the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
the first layer is comprised of SiO 2 , and
the second layer is comprised of any one of Ta 2 O 5 , HFO 2 , ZrO 2 , TiO 2 , and MgO, wherein:
the second layer is comprised of ZRO 2 ,
the thickness of the LT layer is 0.125λ to 0.175λ,
a thickness of the first layer is 0.085λ to 0.14λ, and
a thickness of the second layer is 0.06λ to 0.12λ.
11. The acoustic wave device according to claim 10 , the Euler angles of the LT layer are (0°±20°, −15° to 60°, 0°±10°), (−120°±20°, −15° to 60°, 0°±10°), or (120°±20°, −15° to 60, 0°±10°).
12. An acoustic wave device comprising:
a substrate,
a multilayer film on the substrate,
an LT layer configured by a single crystal of LiTaO 3 on the multilayer film, and
an IDT electrode on the LT layer, wherein
a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
Euler angles of the LT layer are
(0°±20°, −5° to 65°, 0°±10°),
(−120°±20°, −5° to 65°, 0°±10°),
(120°±20°, −5° to 65°, 0°±10°),
the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
the first layer is comprised of SiO 2 , and
the second layer is comprised of any one of Ta 2 O 5 , HFO 2 , ZrO 2 , TiO 2 , and MgO, wherein:
the second layer is comprised of TiO 2 ,
the thickness of the LT layer is 0.15λ to 0.2125λ,
a thickness of the first layer is 0.055λ to 0.15λ, and
a thickness of the second layer is 0.11λ to 0.24λ.
13. The acoustic wave device according to claim 12 , wherein the Euler angles of the LT layer are (0°±20°, −5° to 35°, 0°±10°), (−120°±20°, −5° to 35°, 0°±10°), or (120°±20°, −5° to 35, 0°±10°).
14. An acoustic wave device comprising:
a substrate,
a multilayer film on the substrate,
an LT layer configured by a single crystal of LiTaO 3 on the multilayer film, and
an IDT electrode on the LT layer, wherein
a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
Euler angles of the LT layer are
(0°±20°, −5° to 65°, 0°±10°),
(−120°±20°, −5° to 65°, 0°±10°),
(120°±20°, −5° to 65°, 0°±10°),
the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
the first layer is comprised of SiO 2 , and
the second layer is comprised of any one of Ta 2 O 5 , HFO 2 , ZrO 2 , TiO 2 , and MgO, wherein:
the second layer is comprised of MgO 2 ,
the thickness of the LT layer is 0.1375λ to 0.20λ,
a thickness of the first layer is 0.65λ to 0.15λ, and
a thickness of the second layer is 0.09λ to 0.23λ.
15. The acoustic wave device according to claim 14 , wherein the Euler angles of the LT layer are (0°±20°, −0° to 35°, 0°±10°), (−120°±20°, −0° to 35°, 0°±10°), or (120°±20°, −0° to 35, 0°±10°).
16. A multiplexer comprising:
an antenna terminal,
a transmission filter filtering a signal output to the antenna terminal, and
a reception filter filtering a signal input from the antenna terminal, wherein
at least one of the transmission filter and the reception filter comprises the acoustic wave device according to claim 1 .
17. A communication apparatus comprising:
an antenna,
the multiplexer according to claim 16 , in which the antenna terminal is connected with the antenna, and
an IC which is connected with respect to the transmission filter and the reception filter on a side opposite to the antenna terminal about a signal route.