Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A pitch between adjacent fingers of the IDT is varied along one or both of an aperture of the IDT and a length of the IDT.
1. An acoustic resonator device comprising:
a substrate having a surface;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate; and
an interdigital transducer (IDT) including interleaved fingers formed on the front surface of the single-crystal piezoelectric plate, the IDT comprising:
a first pitch/mark zone having a pitch between adjacent interleaved fingers equal to a first pitch value P 1 and a mark of the interleaved fingers equal to a first mark value M 1 , and
a second pitch/mark zone having a pitch between adjacent interleaved fingers equal to a second pitch value P 2 not equal to P 1 and a mark of the interleaved fingers equal to a second mark value M 2 not equal to M 1 ,
wherein the IDT further comprises a first set of first fingers extending from a first busbar interleaved with a second set of fingers extending from a second busbar,
a mark of each first finger tapers between M 1 and M 2 across the aperture of the IDT,
a mark of each second finger is (M 1 +M 2 )/2, and
a portion of each second finger within the aperture is not perpendicular to the second bus bar and an angle between the portion of each second finger within the aperture and the second busbar is 90°+arctangent ((P 2 −P 1 )/AP), where AP is a distance across the aperture of the IDT, and
wherein a radio frequency signal applied to the IDT causes excitation of a same shear primary acoustic mode by both the first pitch/mark zone and the second pitch/mark zone.
2. The acoustic resonator device of claim 1 , wherein
a portion of the single-crystal piezoelectric plate forms a diaphragm spanning a cavity in the substrate, and
the interleaved fingers of the IDT are disposed on the diaphragm.
3. The acoustic resonator device of claim 1 , further comprising:
an acoustic Bragg reflector sandwiched between the surface of the substrate and the back surface of the single-crystal piezoelectric plate.
4. The acoustic resonator device of claim 1 , wherein the radio frequency signal applied to the IDT causes excitation of different spurious acoustic modes by the first pitch/mark zone and the second pitch/mark zone.
5. The acoustic resonator device of claim 1 , wherein
the IDT comprises two or more unit cells juxtaposed along the length of the IDT, each unit cell comprising at least one first pitch/mark zone and at least one second pitch/mark zone.
6. An acoustic resonator device comprising:
a substrate having a surface;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate; and
an interdigital transducer (IDT) including interleaved fingers formed on the front surface of the single-crystal piezoelectric plate,
wherein the IDT changes between a first pitch/mark combination and a second pitch/mark across an aperture of the IDT,
wherein the IDT further comprises a first set of first fingers extending from a first busbar interleaved with a second set of fingers extending from a second busbar,
a mark of each first finger tapers between a first mark value M 1 and a second mark value M 2 not equal to M 1 across the aperture of the IDT,
a mark of each second finger is (M 1 +M 2 )/2, and
a portion of each second finger within the aperture is not perpendicular to the second bus bar and an angle between the portion of each second finger within the aperture and the second busbar is 90°+arctangent ((P 2 −P 1 )/AP), where P 1 is a first pitch value, P 2 is a second pitch value not equal to P 1 , and AP is a distance across the aperture of the IDT, and
wherein a radio frequency signal applied to the IDT causes excitation of a same shear primary acoustic mode by both the first pitch/mark combination and the second pitch/mark combination.
7. The acoustic resonator device of claim 6 , wherein
a portion of the single-crystal piezoelectric plate forms a diaphragm spanning a cavity in the substrate, and
the interleaved fingers of the IDT are disposed on the diaphragm.
8. The acoustic resonator device of claim 6 , further comprising:
an acoustic Bragg reflector sandwiched between the surface of the substrate and the back surface of the single-crystal piezoelectric plate.
9. The acoustic resonator device of claim 6 , wherein the radio frequency signal applied to the IDT causes excitation of different spurious acoustic modes by the first pitch/mark zone and the second pitch/mark zone.
10. The acoustic resonator device of claim 6 , wherein
the IDT comprises two or more unit cells juxtaposed along the length of the IDT, each unit cell comprising at least one first pitch/mark zone and at least one second pitch/mark zone.