POWER MODULE PACKAGE HAVING MIRRORED LEADS

1 . An apparatus, comprising:

a semiconductor die;

a molding material disposed around at least a portion of the semiconductor die; and

a pair of leads electrically coupled to the semiconductor die and aligned along a first direction from the molding material,

the molding material defining:

an elongated protrusion aligned along a second direction orthogonal to the first direction, and

a notch disposed between the pair of leads.

2 . The apparatus of claim 1 , further comprising:

a substrate coupled to the semiconductor die and having a conductive surface exposed outside of the molding material.

3 . The apparatus of claim 2 , wherein the molding material defines a trench disposed between the elongated protrusion and the conductive surface.

4 . The apparatus of claim 3 , wherein the trench is aligned along the second direction.

5 . The apparatus of claim 1 , wherein the notch is disposed between a pair of extensions made from the molding material.

6 . The apparatus of claim 1 , wherein the elongated protrusion and a trench collectively define at least a portion of a lead-substrate creepage distance.

7 . The apparatus of claim 1 , wherein the notch has a surface that defines at least a portion of a lead-lead creepage distance.

8 . The apparatus of claim 1 , wherein at least one of the pair of leads is electrically coupled to the semiconductor die via a wirebond.

9 . A method, comprising:

coupling a semiconductor die to a substrate;

coupling a leadframe to at least one of the semiconductor die or the substrate; and

forming a molding material having an elongated protrusion and a notch, the elongated protrusion being aligned along a longitudinal axis, and the notch facing in a direction away from the longitudinal axis.

10 . The method of claim 9 , wherein the semiconductor die is coupled to the substrate via a printed solder.

11 . The method of claim 9 , wherein the leadframe is coupled to the semiconductor die via a wirebond.

12 . The method of claim 9 , wherein the molding material is formed using a transfer molding process.

13 . The method of claim 9 , further comprising:

trimming the leadframe to define a plurality of leads extending from the molding material along a first direction,

the elongated protrusion being aligned along a second direction orthogonal to the first direction, and

the notch being disposed between a pair of the plurality of leads.

14 . An apparatus, comprising:

a semiconductor die;

a molding material disposed around at least a portion of the semiconductor die;

a first lead extending along a first direction away from the molding material; and

a second lead extending along a first direction away from the molding material,

the molding material defining:

a trench aligned along a second direction orthogonal to the first direction, and

a notch disposed between the first lead and the second lead.

15 . The apparatus of claim 14 , further comprising:

a substrate coupled to the semiconductor die and having a conductive surface exposed outside of the molding material.

16 . The apparatus of claim 14 , wherein the molding material defines an elongated protrusion disposed between the trench and notch.

17 . The apparatus of claim 16 , wherein the trench and the elongated protrusion collectively define at least a portion of a lead-substrate creepage distance.

18 . The apparatus of claim 14 , wherein the trench is aligned along the second direction.

19 . The apparatus of claim 14 , wherein the notch is disposed between a pair of extensions made from the molding material, the notch faces in a direction away from the second direction.

20 . The apparatus of claim 14 , wherein the notch has a surface that defines at least a portion of a lead-lead creepage distance.