Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.
1. A light detecting device, comprising:
a semiconductor substrate including a first surface side and a second surface side opposite the first surface side;
a first photoelectric conversion region disposed in the semiconductor substrate;
a floating diffusion region disposed in the semiconductor substrate;
a gate electrode configured to transfer a charge from the first photoelectric conversion region to the floating diffusion region, wherein the gate electrode includes a first part disposed in the semiconductor substrate and a second part on the first surface side of the semiconductor substrate; and
a first semiconductor region disposed in the semiconductor substrate and disposed between the first part of the gate electrode and the first photoelectric conversion region such that, in a plan view, a part of the first semiconductor region overlaps with the first part of the gate electrode,
wherein the first semiconductor region has a first width and the first photoelectric conversion region has a second width larger than the first width,
wherein the first width is an entire width of the first semiconductor region in a first direction and the second width is an entire width of the first photoelectric conversion region in the first direction, and
wherein the first semiconductor region has a conductivity type that is the same as a conductivity type of the first photoelectric conversion region.
2. The light detecting device according to claim 1 , wherein the first part of the gate electrode is disposed in a concave section of the semiconductor substrate, and wherein the first semiconductor region is self-aligned with the concave section.
3. The light detecting device according to claim 1 , further comprising a gate insulating film between the gate electrode and the first photoelectric conversion region.
4. The light detecting device according to claim 1 , further comprising:
a second photoelectric conversion region, wherein the first photoelectric conversion region is formed at a first depth in the semiconductor substrate and the second photoelectric conversion region is formed at a second depth in the semiconductor substrate and overlaps with the first photoelectric conversion region, and wherein the first photoelectric conversion region at the first depth is closer to a light receiving surface of the semiconductor substrate than the second photoelectric conversion region at the second depth.
5. The light detecting device according to claim 1 , wherein the gate electrode fills a concave section in the semiconductor substrate.
6. The light detecting device according to claim 1 , further comprising a second semiconductor region between the first semiconductor region and the first photoelectric conversion region.
7. The light detecting device according to claim 6 , wherein the second semiconductor region has different conductivity type than the first semiconductor region.
8. The light detecting device according to claim 6 , wherein the first part of the gate electrode is disposed in a concave section of the semiconductor substrate, and wherein the second semiconductor region is self-aligned with the concave section.
9. The light detecting device according to claim 1 , wherein the floating diffusion region is disposed in a surface of the semiconductor substrate opposite a light receiving surface of the semiconductor substrate.
10. An electronic apparatus, comprising:
a signal processing circuit; and
a light detecting device, comprising:
a semiconductor substrate including a first surface side and a second surface side opposite the first surface side;
a first photoelectric conversion region disposed in the semiconductor substrate;
a floating diffusion region disposed in the semiconductor substrate;
a gate electrode configured to transfer a charge from the first photoelectric conversion region to the floating diffusion region, wherein the gate electrode includes a first part disposed in the semiconductor substrate and a second part on the first surface side of the semiconductor substrate; and
a first semiconductor region disposed in the semiconductor substrate and disposed between the first part of the gate electrode and the first photoelectric conversion region such that, in a plan view, a part of the first semiconductor region overlaps with the first part of the gate electrode,
wherein the first semiconductor region has a first width and the first photoelectric conversion region has a second width larger than the first width,
wherein the first width is an entire width of the first semiconductor region in a first direction and the second width is an entire width of the first photoelectric conversion region in the first direction, and
wherein the first semiconductor region has a conductivity type that is the same as a conductivity type of the first photoelectric conversion region.
11. The electronic apparatus according to claim 10 , wherein the first part of the gate electrode is disposed in a concave section of the semiconductor substrate, and wherein the first semiconductor region is self-aligned with the concave section.
12. The electronic apparatus according to claim 10 , further comprising a gate insulating film between the gate electrode and the first photoelectric conversion region.
13. The electronic apparatus according to claim 10 , further comprising:
a second photoelectric conversion region, wherein the first photoelectric conversion region is formed at a first depth in the semiconductor substrate and the second photoelectric conversion region is formed at a second depth in the semiconductor substrate and overlaps with the first photoelectric conversion region, and wherein the first photoelectric conversion region at the first depth is closer to a light receiving surface of the semiconductor substrate than the second photoelectric conversion region at the second depth.
14. The electronic apparatus according to claim 10 , wherein the gate electrode fills a concave section in the semiconductor substrate.
15. The electronic apparatus according to claim 10 , further comprising a second semiconductor region between the first semiconductor region and the first photoelectric conversion region.
16. The electronic apparatus according to claim 15 , wherein the second semiconductor region has different conductivity type than the first semiconductor region.
17. The electronic apparatus according to claim 15 , wherein the first part of the gate electrode is disposed in a concave section of the semiconductor substrate, and wherein the second semiconductor region is self-aligned with the concave section.
18. The electronic apparatus according to claim 10 , wherein the floating diffusion region is disposed in a surface of the semiconductor substrate opposite a light receiving surface of the semiconductor substrate.