Switching oscillation reduction for power semiconductor device modules
In a general aspect, a half-bridge circuit includes a substrate having first, second and third patterned metal layers disposed on a surface. The circuit also includes first and second high-side transistors disposed on the first patterned metal layer, and first and conductive clips electrically coupling, respectively, the first and second high-side transistors with the second patterned metal layer. The circuit also includes first and second low-side transistors disposed on the second patterned metal layer, and third and fourth conductive clips electrically coupling, respectively, the first and second low-side transistors with the third patterned metal layer. The circuit further includes a DC+ terminal electrically coupled with the first patterned metal layer via a first conductive post disposed between the first and second high-side transistors, and a DC− terminal electrically coupled with the third patterned metal layer via a second conductive post disposed between the third and fourth conductive clips.
1 . A half-bridge circuit power module comprising:
a substrate including a first patterned metal layer, a second patterned metal layer, and a third patterned metal layer disposed on a surface of the substrate;
a first high-side transistor and a second high-side transistor disposed on the first patterned metal layer;
a first conductive clip electrically coupling the first high-side transistor with the second patterned metal layer;
a second conductive clip electrically coupling the second high-side transistor with the second patterned metal layer;
a first low-side transistor and a second low-side transistor disposed on the second patterned metal layer;
a third conductive clip electrically coupling the first low-side transistor with the third patterned metal layer;
a fourth conductive clip electrically coupling the second low-side transistor with the third patterned metal layer;
a DC+ terminal that is electrically coupled with the first patterned metal layer via a first conductive post disposed between the first high-side transistor and the second high-side transistor on the first patterned metal layer; and
a DC− terminal that is electrically coupled with the third patterned metal layer via a second conductive post disposed between the third conductive clip and the fourth conductive clip on the third patterned metal layer.
2 . The half-bridge circuit power module of claim 1 , wherein the second patterned metal layer is electrically coupled with an output terminal of the half-bridge circuit power module via a third conductive post.
3 . The half-bridge circuit power module of claim 2 , wherein:
the first conductive clip electrically couples a source terminal of the first high-side transistor with the output terminal;
the second conductive clip electrically couples a source terminal of the second high-side transistor with the output terminal;
the third conductive clip electrically couples a source terminal of the first low-side transistor with the DC− terminal; and
the fourth conductive clip electrically couples a source terminal of the second low-side transistor with the DC− terminal.
4 . The half-bridge circuit power module of claim 2 , wherein:
the DC+ terminal, the DC− terminal and the output terminal include a first conductive material; and
the first conductive post, the second conductive post, and the third conductive post include a second conductive material different from the first conductive material.
5 . The half-bridge circuit power module of claim 4 , wherein:
the first conductive material is a metal; and
the second conductive material is an alloy of the metal.
6 . The half-bridge circuit power module of claim 4 , wherein:
the first conductive material is pure copper; and
the second conductive material is an alloy of copper including at least one of iron, or phosphorus.
7 . The half-bridge circuit power module of claim 1 , wherein:
the DC+ terminal is a first DC+ terminal; and
the substrate further includes:
a fourth patterned metal layer disposed on the surface of the substrate; and
a fifth patterned metal layer disposed on the surface of the substrate, the half-bridge circuit power module further comprising:
a third high-side transistor having a drain terminal disposed on the fourth patterned metal layer;
a fourth high-side transistor having a drain terminal disposed on the fourth patterned metal layer;
a fifth conductive clip electrically coupling a source terminal of the third high-side transistor with the fifth patterned metal layer;
a sixth conductive clip electrically coupling the fourth high-side transistor with the fifth patterned metal layer;
a second DC+ terminal that is electrically coupled with the fourth patterned metal layer via a third conductive post disposed between the third high-side transistor and the fourth high-side transistor.
8 . The half-bridge circuit power module of claim 7 , further comprising an output terminal that is:
electrically coupled with the second patterned metal layer via a fourth conductive post; and
electrically coupled with the fifth patterned metal layer via a fifth conductive post.
9 . The half-bridge circuit power module of claim 1 , wherein the substrate further includes a fourth patterned metal layer disposed on the surface of the substrate, the half-bridge circuit power module further comprising:
a third low-side transistor disposed on the fourth patterned metal layer; and
a fourth low-side transistor disposed on the fourth patterned metal layer,
the third conductive clip further electrically coupling the third low-side transistor to the third patterned metal layer,
the fourth conductive clip further electrically coupling the fourth low-side transistor to the third patterned metal layer.
10 . The half-bridge circuit power module of claim 9 , further comprising:
a fifth low-side transistor disposed on the second patterned metal layer;
a sixth low-side transistor disposed on the fourth patterned metal layer; and
a fifth conductive clip electrically coupling the fifth low-side transistor and the sixth low-side transistor with the third patterned metal layer,
the DC− terminal being further electrically coupled with the third patterned metal layer via a third conductive post disposed between the fourth conductive clip and the fifth conductive clip on the third patterned metal layer.
11 . The half-bridge circuit power module of claim 10 , wherein:
the DC+ terminal is a first DC+ terminal; and
the substrate further includes a fifth patterned metal layer disposed on the surface of the substrate,
the half-bridge circuit power module further comprising:
a third high-side transistor disposed on the first patterned metal layer;
a sixth conductive clip electrically coupling the third high-side transistor with the second patterned metal layer;
a fourth high-side transistor disposed on the fifth patterned metal layer;
a seventh conductive clip electrically coupling the fourth high-side transistor with the fourth patterned metal layer;
a fifth high-side transistor disposed on the fifth patterned metal layer;
an eighth conductive clip electrically coupling the fifth high-side transistor with the fourth patterned metal layer;
a sixth high-side transistor disposed on the fifth patterned metal layer;
a ninth conductive clip electrically coupling the sixth high-side transistor with the fourth patterned metal layer; and
a second DC+ terminal that is electrically coupled with fifth patterned metal layer via:
a third conductive post disposed between the fourth high-side transistor and the fifth high-side transistor on the fifth patterned metal layer; and
a fourth conductive post disposed between the fifth high-side transistor and the sixth high-side transistor on the fifth patterned metal layer,
the first DC+ terminal being further electrically coupled with the first patterned metal layer via fifth conductive post disposed between the second high-side transistor and the third high-side transistor on the first patterned metal layer.
12 . The half-bridge circuit power module of claim 1 , wherein:
respective drain terminals of the first high-side transistor and the second high-side transistor are disposed on and electrically coupled with the first patterned metal layer; and
respective drain terminals of the first low-side transistor and the second low-side transistor are disposed on and electrically coupled with the second patterned metal layer.
13 . A half-bridge circuit power module comprising:
a substrate including a first patterned metal layer, a second patterned metal layer, a third patterned metal layer, a fourth patterned metal layer, and a fifth patterned metal layer disposed on a surface of the substrate;
a first low-side transistor disposed on the first patterned metal layer and electrically coupled with the fifth patterned metal layer via a first conductive clip;
a second low-side transistor disposed on the first patterned metal layer and electrically coupled with the fifth patterned metal layer via a second conductive clip;
a third low-side transistor disposed on the second patterned metal layer and electrically coupled with the fifth patterned metal layer via the first conductive clip;
a fourth low-side transistor disposed on the second patterned metal layer and electrically coupled with the fifth patterned metal layer via the second conductive clip;
a first high-side transistor disposed on the third patterned metal layer and electrically coupled with the first patterned metal layer via a third conductive clip;
a second high-side transistor disposed on the third patterned metal layer and electrically coupled with the first patterned metal layer via a fourth conductive clip;
a third high-side transistor disposed on the fourth patterned metal layer and electrically coupled with the second patterned metal layer via a fifth conductive clip;
a fourth high-side transistor disposed on the fourth patterned metal layer and electrically coupled with the second patterned metal layer via a sixth conductive clip;
a first DC+ terminal electrically coupled with the third patterned metal layer via a first conductive post disposed between the first high-side transistor and the second high-side transistor on the third patterned metal layer;
a second DC+ terminal electrically coupled with the fourth patterned metal layer via a second conductive post disposed between the third high-side transistor and the fourth high-side transistor on the fourth patterned metal layer; and
a DC− terminal electrically coupled with the fifth patterned metal layer via a third conductive post disposed between the first conductive clip and the second conductive clip on the fifth patterned metal layer.
14 . The half-bridge circuit power module of claim 13 , further comprising an output terminal that is:
coupled with the first patterned metal layer via a fourth conductive post; and
coupled with the second patterned metal layer via a fifth conductive post.
15 . The half-bridge circuit power module of claim 14 , wherein:
the first DC+ terminal, the second DC+ terminal and the output terminal include pure copper; and
the first conductive post, the second conductive post, the third conductive post, the fourth conductive post, and the fifth conductive post include an alloy of copper.
16 . The half-bridge circuit power module of claim 15 , wherein the alloy of copper includes at least one of iron or phosphorous.
17 . The half-bridge circuit power module of claim 13 , further comprising:
a fifth low-side transistor disposed on the first patterned metal layer and electrically coupled with the fifth patterned metal layer via a seventh conductive clip;
a sixth low-side transistor disposed on the second patterned metal layer and electrically coupled with the fifth patterned metal layer via the seventh conductive clip;
a fifth high-side transistor disposed on the third patterned metal layer and electrically coupled with the first patterned metal layer via an eighth conductive clip;
a sixth high-side transistor disposed on the fourth patterned metal layer and electrically coupled with the second patterned metal layer via a sixth conductive clip,
the first DC+ terminal being further electrically coupled with the third patterned metal layer via a fourth conductive post disposed between the second high-side transistor and the fifth high-side transistor on the third patterned metal layer;
the second DC+ terminal being further electrically coupled with the fourth patterned metal layer via a fifth conductive post disposed between the fourth high-side transistor and the sixth high-side transistor on the fourth patterned metal layer, and
the DC− terminal is further electrically coupled with the fifth patterned metal layer via a sixth conductive post disposed between the second conductive clip and the third conductive clip on the fifth patterned metal layer.
18 . A method for producing a half-bridge circuit power module, method comprising:
coupling a first high-side transistor and a second high-side transistor with a first patterned metal layer disposed on a surface of a substrate;
coupling a first low-side transistor and a second low-side transistors with a second patterned metal layer disposed on the surface of the substrate;
with a first conductive clip, electrically coupling the first high-side transistor with the second patterned metal layer;
with a second conductive clip, electrically coupling the second high-side transistor with the second patterned metal layer;
with a third conductive clip, electrically coupling the first low-side transistor with a third patterned metal layer disposed on the surface of the substrate;
with a fourth conductive clip, electrically coupling the second low-side transistor with the third patterned metal layer;
electrically coupling a DC+ terminal with the first patterned metal layer via a first conductive post disposed between the first high-side transistor and the second high-side transistor on the first patterned metal layer; and
electrically coupling a DC− terminal with the third patterned metal layer via a second conductive post disposed between the third conductive clip and the fourth conductive clip on the third patterned metal layer.
19 . The method of claim 18 , further comprising electrically coupling an output terminal with the second patterned metal layer via a third conductive post.
20 . The method of claim 19 , wherein the DC+ terminal is a first DC+ terminal, the method further comprising:
coupling a third high-side transistor with a fourth patterned metal layer disposed on the surface of the substrate;
coupling a fourth high-side transistor with the fourth patterned metal layer;
coupling a third low-side transistor with a fifth patterned metal layer on the surface of the substrate;
coupling a fourth low-side transistor with the fifth patterned metal layer;
with a fifth conductive clip, electrically coupling the third high-side transistor with the fifth patterned metal layer;
with a sixth conductive clip, electrically coupling the fourth high-side transistor with the fifth patterned metal layer; and
electrically coupling a second DC+ terminal with the fourth patterned metal layer via a fourth conductive post disposed between the third high-side transistor and the fourth high-side transistor on the fourth patterned metal layer; and
further electrically coupling the output terminal with the fifth patterned metal layer via fifth conductive post,
the third conductive clip further electrically coupling the third low-side transistor with the third patterned metal layer, and
the fourth conductive clip further electrically coupling the fourth low-side transistor with the third patterned metal layer.