Semiconductor device
A semiconductor device includes a laminate including a semiconductor element, an insulating substrate on a first surface of the semiconductor element, an interconnect on the insulating substrate, and an interconnect member on a second surface of the semiconductor element. The interconnect is electrically connected to a first electrode in the first surface of the semiconductor element through a through hole in the insulating substrate. The interconnect member is electrically connected to a second electrode in the second surface of the semiconductor element. The semiconductor device further includes first and second elastic terminals holding the laminate therebetween. The first terminal includes a bulge that engages with a depression in the interconnect. The second terminal contacts the interconnect member. The semiconductor device further includes a fixing member fixing the first terminal and the second terminal while electrically isolating the first terminal and the second terminal from each other.
1 . A semiconductor device comprising:
a laminate including
a semiconductor element including a first electrode in a first surface thereof and a second electrode in a second surface thereof, the first and second surfaces facing away from each other;
an insulating substrate on the first surface of the semiconductor element, the insulating substrate having a through hole exposing the first electrode;
an interconnect on a surface of the insulating substrate facing away from the semiconductor element, the interconnect being electrically connected to the first electrode through the through hole, the interconnect having a depression depressed toward the semiconductor element in a surface thereof facing away from the semiconductor element; and
an interconnect member on the second surface of the semiconductor element, the interconnect member being electrically connected to the second electrode;
a first terminal and a second terminal that are elastic and hold the laminate therebetween in a direction of lamination with elasticity, the first terminal including a bulge that engages with the depression to contact the surface of the interconnect, the second terminal contacting the interconnect member; and
a fixing member fixing the first terminal and the second terminal while electrically isolating the first terminal and the second terminal from each other.
2 . The semiconductor device as claimed in claim 1 , wherein
the interconnect member includes a depression depressed toward the semiconductor element in a surface thereof facing away from the semiconductor element, and
the second terminal includes a bulge that engages with the depression of the interconnect member to contact the interconnect member.
3 . The semiconductor device as claimed in claim 2 , further comprising:
a conductive adhesive layer joining the second electrode and the interconnect member together,
wherein the interconnect member includes another depression in a surface thereof facing toward the semiconductor element, said another depression having a depth equal to a sum of a thickness of the semiconductor element and a thickness of the conductive adhesive layer, and
the semiconductor element is accommodated in said another depression.
4 . The semiconductor device as claimed in claim 2 , wherein
the first terminal and the second terminal include the respective bulges at respective first ends, and
the fixing member includes
an insulation member interposed between respective second ends of the first terminal and the second terminal opposite from the respective first ends; and
a tightening member tightening the first terminal and the second terminal together by pinching the respective second ends.
5 . The semiconductor device as claimed in claim 2 , wherein the first terminal and the second terminal elastically deform to widen a gap between the bulge of the first terminal and the bulge of the second terminal to hold the laminate between the first terminal and the second terminal.
6 . The semiconductor device as claimed in claim 1 , further comprising:
an encapsulation material encapsulating at least an area of contact between the first terminal and the interconnect and an area of contact between the second terminal and the interconnect member.
7 . The semiconductor device as claimed in claim 1 , wherein electric current flows in a first direction in the interconnect and flows in a second direction opposite from the first direction in the interconnect member.
8 . The semiconductor device as claimed in claim 1 , wherein the interconnect member includes a lead terminal.
9 . The semiconductor device as claimed in claim 1 , further comprising:
a conductive adhesive layer joining the second electrode and the interconnect member together.
10 . The semiconductor device as claimed in claim 1 , further comprising:
an insulating adhesive layer interposed between the insulating substrate and the semiconductor element to bond the insulating substrate and the semiconductor element together.
11 . The semiconductor device as claimed in claim 10 , wherein
the through hole pierces through the insulating adhesive layer, and
the interconnect includes
a seed layer covering the surface of the insulating substrate and covering a surface of the insulating substrate, a surface of the insulating adhesive layer, and a surface of the first electrode that are exposed in the through hole; and
a metal layer on the seed layer.