POWER TRANSISTOR AGE DETECTION
A power transistor age detection circuit that allows for end-of-life detection of a power transistor. The circuit includes the power transistor and a comparator. During a testing phase, a test current may be passed through the power transistor while on, thus inducing the input voltage at the input node of the power transistor due to its on-resistance. The comparator then compares an age test voltage that depends on the input voltage present on the input node of the power transistor against a reference voltage provided by a reference voltage source. If during the testing phase, the power transistor has aged significantly to the extent that the input voltage present at the power transistor has increased to some proportion of the reference voltage, the comparator will output the end-of-life indication signal, indicating that the power transistor has reached or is approaching its end-of-life state.
1 . A power transistor age detection circuit comprising:
a power transistor configured to pass current from a power transistor input node to a power transistor output node when the power transistor is on, an input voltage is present on the power transistor input node, and an output voltage that is lower than the input voltage is present on the power transistor output node;
a comparator having a first comparator input node that is configured to receive a reference voltage, and a second comparator input node that is coupled to the power transistor input node so as to be configured to receive an age test voltage that depends on the input voltage that is applied to the power transistor input node, the comparator being also configured to output a signal indicative of a status of the reference voltage with respect to the age test voltage; and
an age detection circuit configured to receive the signal output from the comparator, and detect aging of the power transistor when the comparator, while the power transistor is on, outputs a signal indicative of particular status of the reference voltage with respect to the age test voltage.
2 . The power transistor age detection circuit according to claim 1 , wherein the particular status is that the age test voltage is greater than the reference voltage.
3 . The power transistor age detection circuit according to claim 1 , the age test voltage is proportional to the input voltage of the power transistor.
4 . The power transistor age detection circuit according to claim 3 , the power transistor age detection circuit further comprising a voltage divider having an output connected to the second comparator input node, such that the age test voltage is less than the input voltage of the power transistor.
5 . The power transistor age detection circuit according to claim 1 , wherein the power transistor is a field-effect transistor.
6 . The power transistor age detection circuit according to claim 5 , wherein the power transistor is a gallium-nitride transistor.
7 . The power transistor age detection circuit according to claim 1 , wherein the power transistor is a high-electron-mobility transistor.
8 . The power transistor age detection circuit according to claim 1 , further comprising:
a reference current source configured to provide a reference current through a voltage divider, the reference voltage generated on an output of the voltage divider.
9 . The power transistor age detection circuit according to claim 8 , a resistor of the voltage divider comprising a reference transistor in an on state.
10 . The power transistor age detection circuit according to claim 9 , the second comparator input node coupled to the power transistor input node such that the age test voltage is less than 90 percent of the input voltage at the power transistor input node.
11 . The power transistor age detection circuit according to claim 9 , the second comparator input node coupled to the power transistor input node such that the age test voltage is less than 75 percent of the input voltage at the power transistor input node.
12 . The power transistor age detection circuit according to claim 9 , wherein the power transistor and the reference transistor are field-effect transistors.
13 . The power transistor age detection circuit according to claim 12 , wherein the power transistor and the reference transistors are gallium-nitride transistors.
14 . The power transistor age detection circuit according to claim 12 , wherein the power transistor and the reference transistor are high-electron-mobility transistors.
15 . The power transistor age detection circuit according to claim 12 , the power transistor and the reference transistor each having active regions formed from a same epitaxial stack.
16 . The power transistor age detection circuit according to claim 12 , wherein a size ratio of a current flow area of the power transistor over a current flow area of the reference transistor is 500 or more.