SUBSTRATE BIASING FOR A TRANSISTOR STRUCTURE THAT USES A TWO-DIMENSIONAL ELECTRON GAS

1 . A transistor structure comprising:

a barrier semiconductor layer;

a channel semiconductor layer immediately beneath the barrier semiconductor layer to form a heterojunction interface with the barrier semiconductor layer, the heterojunction inducing a two-dimensional electron gas (2DEG) within the channel semiconductor layer;

a source contact in conductive contact with the 2DEG;

a drain contact in conductive contact with the 2DEG;

a gate terminal that is proximate to the 2DEG such that voltages applied to the gate terminal control whether the 2DEG is continuous between the source contact and the drain contact;

a semiconductor substrate beneath and rigidly coupled to the channel semiconductor layer and the barrier semiconductor layer;

a substrate contact layer disposed immediately beneath the semiconductor substrate, the substrate contact layer being electrically disconnected from the source contact to allow for a different voltage to be applied to the substrate contact layer as compared to the source contact; and

a biasing circuit configured to bias the semiconductor substrate.

2 . The transistor structure of claim 1 , the semiconductor substrate being a Silicon substrate.

3 . The transistor structure of claim 1 , the barrier semiconductor layer being an AlGaN layer, the channel semiconductor layer being a GaN layer.

4 . The transistor structure of claim 1 , the drain contract being in conductive contact with the 2DEG by being in direct contact with the 2DEG, and the source contract being in conductive contact with the 2DEG by being in direct contact with the 2DEG.

5 . The transistor structure of claim 1 , the biasing circuit being configured to bias the semiconductor substrate by applying a positive bias voltage to the substrate contact layer, the positive bias voltage being positive relative to a source voltage applied to the source terminal.

6 . The transistor structure of claim 5 , the positive bias voltage being a fixed positive voltage relative to the source voltage.

7 . The transistor structure of claim 5 , the positive bias voltage being selectively applied depending on a state of the transistor structure.

8 . The transistor structure of claim 5 , the positive bias voltage changing depending on a state of the transistor structure.

9 . The transistor structure of claim 5 , the biasing circuit being configured such that the positive bias voltage has a maximum voltage of more than 40 Volts to the semiconductor substrate.

10 . The transistor structure of claim 1 , the biasing circuit comprising:

a transistor, a drain of the transistor being connected to the substrate contact layer, a gate of the transistor being coupled to an inverter circuit, a source of the transistor being connected to ground.

11 . The transistor structure of claim 1 , the biasing circuit further being configured to bias the semiconductor substrate contact layer, the biasing circuit being connected to the semiconductor substrate contact layer with a wire.

12 . The transistor structure of claim 1 , the biasing circuit being in direct contact with the substrate.

13 . The transistor structure of claim 1 , the channel semiconductor layer and the barrier semiconductor layer formed by epitaxially deposition of an epitaxial stack on the semiconductor substrate, the channel semiconductor layer and the barrier semiconductor layer being formed of a part of the epitaxial stack, the biasing circuit also being formed of another part of the epitaxial stack.

14 . The transistor structure of claim 1 , the channel semiconductor layer and the barrier semiconductor layer formed by epitaxially deposition of an epitaxial stack on the semiconductor substrate, the channel semiconductor layer and the barrier semiconductor layer being formed of a part of the epitaxial stack, the biasing circuit being separate and distinct from the epitaxial stack, the biasing circuit being coupled with the epitaxial stack.