IP Library Granted Patent US 12,487,126
Granted Patent B2
US 12,487,126 · App. 18/496,316 · Granted Dec 2, 2025

Thermopile sensor and sensor array

Inventors: Kouhei Takahashi (Osaka, JP); Masaki Fujikane (Osaka, JP); Hiroyuki Tanaka (Nara, JP)
Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
G01J5/12H10N10/17G01J2005/123
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Quick Facts
Patent No.
US 12,487,126
App. No.
18/496,316
Granted
Dec 2, 2025
Kind
B2
Abstract

A thermopile sensor according to the present disclosure includes a p-type portion and an n-type portion. The p-type portion has a first phononic crystal in which first holes are arranged in a plan view. The n-type portion has a second phononic crystal in which second holes are arranged in a plan view. The p-type portion and the n-type portion constitute a thermocouple. The boundary scattering frequency of phonons in the first phononic crystal is different from the boundary scattering frequency of phonons in the second phononic crystal. Alternatively, the ratio of the sum of the areas of the first holes to the area of the first phononic crystal in a plan view is different from the ratio of the sum of the areas of the second holes to the area of the second phononic crystal in a plan view.

Claims (32)

1 . A thermopile sensor comprising:

a p-type portion that includes a p-type material and has a first phononic crystal in which first holes are arranged in a plan view; and

an n-type portion that includes an n-type material and has a second phononic crystal in which second holes are arranged in a plan view,

wherein the p-type portion and the n-type portion constitute a thermocouple,

wherein a thermal conductivity of the n-type material is higher than a thermal conductivity of the p-type material,

wherein the thermopile sensor satisfies at least one condition selected from the group consisting of the following (I) and (II):

(I) a boundary scattering frequency of phonons in the first phononic crystal is different from a boundary scattering frequency of phonons in the second phononic crystal; and

(II) a ratio of a sum of areas of the first holes to an area of the first phononic crystal in the plan view of the first phononic crystal is different from a ratio of a sum of areas of the second holes to an area of the second phononic crystal in the plan view of the second phononic crystal, and

wherein the thermopile sensor satisfies at least one condition selected from the group consisting of the following (Ib) and (IIb):

(Ib) the boundary scattering frequency of phonons in the second phononic crystal is higher than the boundary scattering frequency of phonons in the first phononic crystal; and

(IIb) a ratio of the sum of the areas of the second holes to an area of the n-type portion in the plan view of the n-type portion is greater than a ratio of the sum of the areas of the first holes to an area of the p-type portion in the plan view of the p-type portion.

2 . The thermopile sensor according to claim 1 , wherein a distance between nearest two holes included in the second holes in a plan view of the second phononic crystal is shorter than a distance between nearest two holes included in the first holes in the plan view of the first phononic crystal.

3 . The thermopile sensor according to claim 1 , wherein the ratio of the sum of the areas of the second holes to the area of the n-type portion in the plan view of the n-type portion is greater than the ratio of the sum of the areas of the first holes to the area of the p-type portion in the plan view of the p-type portion.

4 . The thermopile sensor according to claim 1 , wherein a specific surface area of the second phononic crystal is greater than a specific surface area of the first phononic crystal.

5 . The thermopile sensor according to claim 1 , further comprising:

a substrate; and

a sensor layer including the thermocouple,

wherein the sensor layer has a connection portion, a beam, and a sensing portion,

wherein the connection portion connects the sensor layer to the substrate,

wherein the beam is connected to the sensing portion and supports the sensing portion in a state of being separated from the substrate,

wherein the sensing portion and the beam include the thermocouple,

wherein the p-type portion has a positive Seebeck coefficient, and

wherein the n-type portion has a negative Seebeck coefficient.

6 . The thermopile sensor according to claim 5 , wherein the sensor layer is a single layer in which the thermocouple faces the substrate.

7 . The thermopile sensor according to claim 5 ,

wherein the sensor layer has a support layer, and

wherein the thermocouple is disposed on the support layer.

8 . The thermopile sensor according to claim 5 , wherein the sensor layer has a protective layer that covers the p-type portion and the n-type portion.

9 . The thermopile sensor according to claim 5 , wherein the sensing portion includes an infrared receiver.

10 . A sensor array comprising:

thermopile sensors forming a one-dimensional array or a two-dimensional array,

wherein the thermopile sensors include the thermopile sensor according to claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 1, 2024
From: TAKAHASHI, KOUHEI; FUJIKANE, MASAKI; TANAKA, HIROYUKI
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 066316/0320 →
Priority Claims (1)
JP 2021-080449 · May 11, 2021 · national
Continuity (2)
Continuation PCTJP2022018143 · Apr 19, 2022
Related Publication 20240068875A1 · Feb 29, 2024
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