Method for etching atomic layer
Provided is a method for etching an atomic layer. The method for etching the atomic layer includes providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part, generating adsorption gas plasma in the first chamber part, adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer, generating etching gas plasma in the first chamber part, and allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer.
1 . A method for etching an atomic layer, the method comprising:
providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part;
generating adsorption gas plasma in the first chamber part;
adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer;
generating etching gas plasma in the first chamber part;
adjusting plasma discharge of the second chamber part by increasing a density of the etching gas plasma of the first chamber part to perform an isotropic desorption on the treatment layer or by decreasing the density of the etching gas plasma of the first chamber part to perform an anisotropic desorption on the treatment layer; and
allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer,
wherein the adsorbing the radicals of the adsorption gas plasma to the substrate comprises allowing the radicals of the adsorption gas plasma to pass from the first chamber part to the second chamber part, and
the allowing the electrons and the ions of the etching gas plasma to be alternately incident into the treatment layer comprises adjusting a voltage applied to a plurality of grids between the first chamber part and the second chamber part or the substrate to allow the electrons and the ions of the etching gas plasma to be incident into the treatment layer.
2 . The method of claim 1 , wherein
the allowing the electrons and the ions of the etching gas plasma to be alternately incident into the treatment layer comprises:
grounding or floating the plurality of grids and applying a positive voltage to the substrate to allow the electrons of the etching gas plasma to be incident into the treatment layer; and
grounding or floating the plurality of grids and the substrate to allow the ions of the etching gas plasma to be incident into the treatment layer into which the electrons are incident.
3 . The method of claim 1 , wherein the plurality of grids comprise a first grid, a second grid, and a third grid, and
the allowing the electrons and the ions of the etching gas plasma to be alternately incident into the treatment layer comprises applying a positive voltage to the second grid and grounding and floating the first grid and the third grid to allow the electrons of the etching gas plasma to be incident into the treatment layer.
4 . The method of claim 1 , wherein
the plurality of grids comprise a first grid, a second grid, and a third grid, and
the allowing the electrons and the ions of the etching gas plasma to be alternately incident into the treatment layer comprises applying a negative voltage to the second grid and grounding and floating the first grid and the third grid to allow the ions of the etching gas plasma to be incident into the treatment layer.
5 . The method of claim 1 , wherein the adjusting the voltage applied to the plurality of grids or the substrate comprises applying a positive voltage to the substrate and adjusting energy of the electrons of the etching gas plasma incident into the treatment layer to about 1 keV or less.
6 . The method of claim 1 , wherein the adjusting the voltage applied to the plurality of grids or the substrate comprises applying a pulse voltage.
7 . A method for etching an atomic layer, the method comprising:
providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part;
generating adsorption gas plasma in the first chamber part;
adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer;
generating etching gas plasma in the first chamber part;
adjusting plasma discharge of the second chamber part by increasing a density of the etching gas plasma of the first chamber part to perform an isotropic desorption on the treatment layer or by decreasing the density of the etching gas plasma of the first chamber part to perform an anisotropic desorption on the treatment layer; and
allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer,
wherein a plurality of grids are provided between the first chamber part and the second chamber part.
8 . The method of claim 7 , wherein the allowing the electrons and the ions of the etching gas plasma to be alternately incident into the treatment layer comprises adjusting a voltage applied to the plurality of grids between the first chamber part and the second chamber part or the substrate.
9 . The method of claim 8 , wherein the adjusting the voltage applied to the plurality of grids between the first chamber part and the second chamber part or the substrate comprises applying a positive voltage to one or more grids of the plurality of grids to pass the electrons of the etching gas plasma and to block the ions of the etching gas plasma.
10 . The method of claim 8 , wherein the adjusting the voltage applied to the plurality of grids between the first chamber part and the second chamber part or the substrate comprises applying a negative voltage to one or more grids of the plurality of grids to pass the ions of the etching gas plasma and to block the electrons of the etching gas plasma.
11 . The method of claim 8 , wherein the adjusting the voltage applied to the plurality of grids between the first chamber part and the second chamber part or the substrate comprises applying a pulse voltage.
12 . The method of claim 7 , further comprising:
before the generating the etching gas plasma in the first chamber part, purging residue of the adsorption gas plasma.
13 . The method of claim 7 , wherein the etching gas plasma comprises an inert gas.
14 . The method of claim 7 , wherein, in the performing the desorption on the treatment layer, allowing the electrons of the etching gas plasma to be incident into the treatment layer so as to remove a portion of the treatment layer and allowing the ions of the etching gas plasma to be incident into the treatment layer, into which the electrons are incident, to charge-neutralize the treatment layer are repeatedly performed.
15 . The method of claim 7 , wherein the electrons of the etching gas plasma incident into the treatment layer have energy of about 1 keV or less.
16 . A method for etching an atomic layer, the method comprising:
providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part;
generating adsorption gas plasma in the first chamber part;
adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer;
generating etching gas plasma in the first chamber part;
adjusting plasma discharge of the second chamber part by increasing a density of the etching gas plasma of the first chamber part to perform an isotropic desorption on the treatment layer or by decreasing the density of the etching gas plasma of the first chamber part to perform an anisotropic desorption on the treatment layer; and
allowing electrons of the etching gas plasma to be incident into the treatment layer so as to remove a portion of the treatment layer; and
allowing ions of the etching gas plasma to be incident into the treatment layer, into which the electrons are incident, to charge-neutralize the treatment layer,
wherein the radicals of the adsorption gas plasma pass from the first chamber part to the second chamber part through a shutter,
a removal of the portion of the treatment layer and a charge-neutralization of the treatment layer are repeatedly performed until the treatment layer is completely detached, and
a voltage applied to a plurality of grids between the first chamber part and the second chamber part or the substrate is adjusted so that the electrons or the ions of the etching gas plasma are incident into the treatment layer.