Display device and manufacturing method thereof
A display device includes a substrate including pixels; a buffer layer disposed on the substrate; an etch stopper layer disposed between the substrate and the buffer layer; and at least one penetrating-hole penetrating the substrate, the buffer layer, and the etch stopper layer, wherein the etch stopper layer includes amorphous carbon.
1. A method of manufacturing a display device, the method comprising:
irradiating a laser light onto a substrate to form a hole line in the substrate;
forming an etch stopper layer on the substrate to overlap the hole line, the etch stopper layer including amorphous carbon;
forming a buffer layer on the etch stopper layer;
etching the substrate to form a first hole corresponding to the hole line;
forming a second hole corresponding to the first hole in the etch stopper layer;
forming a third hole corresponding to the second hole in the buffer layer; and
disposing a display element layer including a light emitting element that emits light in response to an electrical signal provided to the light emitting element.
2. The method of claim 1 , wherein the forming of the first hole, the second hole, and third hole includes forming the first hole, the second hole, and the third hole as a single cavity.
3. The method of claim 1 , wherein the etching of the substrate includes forming the first hole through a wet etching process.
4. The method of claim 1 , wherein the forming of the second hole includes removing the etch stopper layer corresponding to the second hole through an O2 ashing process.
5. The method of claim 1 , wherein the forming of the second hole and the forming of the third hole are performed in a single process.
6. The method of claim 1 , wherein the forming of the etch stopper layer and the forming of the buffer layer are continuously performed.
7. The method of claim 1 , wherein the forming of the hole line includes forming the hole line in a thickness direction of the substrate.
8. The method of claim 1 , further comprising:
forming a conductive pattern on the etch stopper layer between the forming of the etch stopper layer and the forming of the buffer layer.
9. The method of claim 8 , further comprising:
forming a stress compensation layer on the etch stopper layer between the forming of the conductive pattern on the etch stopper layer and the forming of the buffer layer.