Semiconductor device structure and method for preparing the same
The present disclosure provides a semiconductor device structure with fine patterns and a method for forming the semiconductor device structure, which can prevent the collapse of the fine patterns. The semiconductor device structure includes a first target structure and a second target structure disposed over a semiconductor substrate. The semiconductor device structure also includes a first spacer element disposed over the first target structure, wherein a topmost point of the first spacer element is between a central line of the first target structure and a central line of the second target structure in a cross-sectional view.
1. A semiconductor device structure, comprising:
a substrate;
a first target structure disposed over the substrate, wherein the first target structure comprises a first portion, a second portion, and a third portion connected to the first portion and the second portion, a height of the first portion and a height of the second portion are greater than a height of the third portion;
a second target structure disposed over the substrate, wherein the second target structure comprises a fourth portion, a fifth portion, and a sixth portion connected to the fourth portion and the fifth portion;
a low-level conductive pattern, positioned between the first target structure and the second target structure, wherein the low-level conductive pattern has a first top end and a first bottom end;
a high-level conductive pattern, positioned in the first target structure, wherein the high-level conductive pattern has a second top end and a second bottom end, the first bottom end is lower than the second bottom end, and the first top end and the second top end are substantially at the same level;
a conductive pillar, disposed over the substrate, and overlapping and electrically connected to the low-level conductive pattern;
a landing pad, disposed on the conductive pillar, and overlapping and electrically connected to the conductive pillar, wherein sidewalls of the conductive pillar are recessed from sidewalls of the landing pad, wherein the landing pad and the conductive pillar are respectively made of different conductive materials, and a resistivity of the landing pad is less than a resistivity of the conductive pillar; and
a storage capacitor, disposed over and electrically connected to the landing pad.
2. The semiconductor device structure of claim 1 , wherein a footprint area of the landing pad is greater than a footprint area of the conductive pillar.
3. The semiconductor device structure of claim 1 , further comprising:
a capacitor plug, disposed on and electrically connected to the landing pad, wherein the storage capacitor is disposed on and electrically connected to the capacitor plug.