IP Library › Patent Application 18508872
Patent Application
App. No. 18/508,872

METHOD FOR PROCESSING QUBITS, QUANTUM CIRCUIT AND NON-TRANSITORY COMPUTER READABLE MEDIUM

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Patent No.
US None
App. No.
18/508,872
Abstract

A method for processing qubits, includes: controlling a high excited energy level of qubits to resonate with a target resonant cavity, the high excited energy level being an energy level greater than or equal to a second excited energy level; and applying a microwave to the qubits in a process of continuous resonance between the high excited energy level of the qubits and the target resonant cavity to control a first excited energy level of the qubits to adiabatically evolve towards a dissipative energy level of the target resonant cavity to initialize the qubits.

Claims (47)

1 . A method for processing qubits, comprising:

controlling a high excited energy level of qubits to resonate with a target resonant cavity, the high excited energy level being an energy level greater than or equal to a second excited energy level; and

applying a microwave to the qubits in a process of continuous resonance between the high excited energy level of the qubits and the target resonant cavity to control a first excited energy level of the qubits to adiabatically evolve towards a dissipative energy level of the target resonant cavity to initialize the qubits.

2 . The method according to claim 1 , wherein controlling the high excited energy level of qubits to resonate with the target resonant cavity comprises:

acquiring a first relationship between a frequency of the high excited energy level of the qubits and a magnetic flux applied to the qubits;

acquiring a first target frequency of the target resonant cavity; and

controlling the high excited energy level of the qubits to resonate with the target resonant cavity by adjusting the magnetic flux applied to the qubits based on the first relationship and the first target frequency.

3 . The method according to claim 1 , wherein controlling the high excited energy level of qubits to resonate with the target resonant cavity comprises:

acquiring a second relationship between a frequency of the target resonant cavity and a magnetic flux applied to the target resonant cavity;

acquiring a second target frequency of the high excited energy level of the qubits; and

controlling the high excited energy level of the qubits to resonate with the target resonant cavity by adjusting the magnetic flux applied to the target resonant cavity based on the second relationship and the second target frequency.

4 . The method according to claim 1 , wherein controlling the high excited energy level of qubits to resonate with the target resonant cavity comprises:

controlling the high excited energy level of the qubits and the target resonant cavity to adiabatically reach a resonance point by adjusting a magnetic flux applied to the qubits or a magnetic flux applied to the target resonant cavity.

5 . The method according to claim 1 , wherein applying microwave to the qubits in the process of continuous resonance between the high excited energy level of the qubits and the target resonant cavity to control the first excited energy level of the qubits to adiabatically evolve towards a dissipative energy level of the target resonant cavity comprises:

determining a target microwave and microwave intensity of the target microwave increasing over time within a predetermined time period; and

applying the target microwave to the qubits in the process of continuous resonance between the high excited energy level of the qubits and the target resonant cavity to control the first excited energy level of the qubits to adiabatically evolve towards the dissipative energy level of the target resonant cavity.

6 . The method according to claim 5 , wherein determining the target microwave comprises:

determining a microwave combination that continuously comprises a first microwave band, a second microwave band, a third microwave band, and a fourth microwave band as the target microwave, wherein an increase rate of the microwave intensity of the first microwave band over time is a first increase rate, an increase rate of the microwave intensity of the second microwave band over time is a second increase rate, and the first increase rate is greater than the second increase rate.

7 . The method according to claim 6 , wherein the second increase rate approaches zero, the microwave intensity of the third microwave band decreases over time, and the fourth microwave band is in a microwave-free stage.

8 . The method according to claim 1 , wherein the target resonant cavity is a read resonant cavity coupled to the qubits, and the read resonant cavity is configured to read a quantum state of the qubits.

9 . The method according to claim 1 , wherein the qubits are Fluxonium qubits.

10 . A quantum circuit, comprising:

a target resonant cavity; and

qubits coupled to the target resonant cavity and coupled to a read line through the target resonant cavity, the qubits being initialized qubits, wherein the qubits are initialized by:

a controlling of a high excited energy level of the qubits to resonate with the target resonant cavity, the high excited energy level being an energy level greater than or equal to a second excited energy level; and

an application of a microwave to the qubits in a process of continuous resonance between the high excited energy level of the qubits and the target resonant cavity of control a first excited energy level of the qubits and the target resonant cavity to control a first excited energy level of the qubits to adiabatically evolve towards a dissipative energy level of the target resonant cavity to initialize the qubits.

11 . A non-transitory computer readable medium that stores a set of instructions that is executable by one or more processors of an apparatus to cause the apparatus to perform operations comprising:

controlling a high excited energy level of qubits to resonate with a target resonant cavity, the high excited energy level being an energy level greater than or equal to a second excited energy level; and

applying a microwave to the qubits in a process of continuous resonance between the high excited energy level of the qubits and the target resonant cavity to control a first excited energy level of the qubits to adiabatically evolve towards a dissipative energy level of the target resonant cavity to initialize the qubits.

12 . The non-transitory computer readable medium according to claim 11 , wherein controlling the high excited energy level of qubits to resonate with the target resonant cavity comprises:

acquiring a first relationship between a frequency of the high excited energy level of the qubits and a magnetic flux applied to the qubits;

acquiring a first target frequency of the target resonant cavity; and

controlling the high excited energy level of the qubits to resonate with the target resonant cavity by adjusting the magnetic flux applied to the qubits based on the first relationship and the first target frequency.

13 . The non-transitory computer readable medium according to claim 11 , wherein controlling the high excited energy level of qubits to resonate with the target resonant cavity comprises:

acquiring a second relationship between a frequency of the target resonant cavity and a magnetic flux applied to the target resonant cavity;

acquiring a second target frequency of the high excited energy level of the qubits; and

controlling the high excited energy level of the qubits to resonate with the target resonant cavity by adjusting the magnetic flux applied to the target resonant cavity based on the second relationship and the second target frequency.

14 . The non-transitory computer readable medium according to claim 11 , wherein controlling the high excited energy level of qubits to resonate with the target resonant cavity comprises:

controlling the high excited energy level of the qubits and the target resonant cavity to adiabatically reach a resonance point by adjusting a magnetic flux applied to the qubits or a magnetic flux applied to the target resonant cavity.

15 . The non-transitory computer readable medium according to claim 11 , wherein applying microwave to the qubits in the process of continuous resonance between the high excited energy level of the qubits and the target resonant cavity to control the first excited energy level of the qubits to adiabatically evolve towards a dissipative energy level of the target resonant cavity comprises:

determining a target microwave, and microwave intensity of the target microwave increasing over time within a predetermined time period; and

applying the target microwave to the qubits in a process of continuous resonance between the high excited energy level of the qubits and the target resonant cavity to control the first excited energy level of the qubits to adiabatically evolve towards the dissipative energy level of the target resonant cavity.

16 . The non-transitory computer readable medium according to claim 15 , wherein determining the target microwave comprises:

determining a microwave combination that continuously comprises a first microwave band, a second microwave band, a third microwave band, and a fourth microwave band as the target microwave, wherein an increase rate of the microwave intensity of the first microwave band over time is a first increase rate, an increase rate of the microwave intensity of the second microwave band over time is a second increase rate, and the first increase rate is greater than the second increase rate.

17 . The non-transitory computer readable medium according to claim 16 , wherein the second increase rate approaches zero, the microwave intensity of the third microwave band decreases over time, and the fourth microwave band is in a microwave-free stage.

18 . The non-transitory computer readable medium according to claim 11 , wherein the target resonant cavity is a read resonant cavity coupled to the qubits, and the read resonant cavity is configured to read a quantum state of the qubits.

19 . The non-transitory computer readable medium according to claim 11 , wherein the qubits are Fluxonium qubits.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2026
From: ALIBABA DAMO (HANGZHOU) TECHNOLOGY CO., LTD.
To: Z-AXIS PTE. LTD.
Reel/Frame 075923/0804 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2024
From: WANG, TENGHUI; DENG, CHUNQING
To: ALIBABA DAMO (HANGZHOU) TECHNOLOGY CO., LTD.
Reel/Frame 067995/0153 →