Member for semiconductor manufacturing apparatus
A member for semiconductor manufacturing apparatus includes a ceramic plate in which an electrode is embedded; a power feeder receiving hole extending from a lower surface of the ceramic plate to a position close to the electrode; a power feeder inserted in the power feeder receiving hole; a recess extending from a bottom surface of the power feeder receiving hole to the electrode or an electrode lead-out portion attached to the electrode, the recess having an opening diameter smaller than a diameter of the power feeder receiving hole and greater than or equal to a diameter of the power feeder; a first brazing material layer filling the recess; and a second brazing material layer bonding an entire end surface of the power feeder to the first brazing material layer and not extending to a boundary between the bottom surface and a side surface of the power feeder receiving hole.
1 . A member for semiconductor manufacturing apparatus comprising:
a ceramic plate having a wafer placement surface on an upper surface and in which an electrode is embedded;
a power feeder receiving hole extending from a lower surface of the ceramic plate to a position close to the electrode;
a power feeder inserted in the power feeder receiving hole with a gap therebetween;
a recess extending from a bottom surface of the power feeder receiving hole to the electrode or an electrode lead-out portion attached to the electrode, the recess having an opening diameter smaller than a diameter of the power feeder receiving hole and greater than or equal to a diameter of the power feeder;
a first brazing material layer filling the recess; and
a second brazing material layer bonding an entire end surface of the power feeder to the first brazing material layer and not extending to a boundary between the bottom surface and a side surface of the power feeder receiving hole.
2 . The member for semiconductor manufacturing apparatus according to claim 1 , wherein the boundary is chamfered, and
the second brazing material layer does not extend to the chamfered boundary.
3 . The member for semiconductor manufacturing apparatus according to claim 1 , wherein the power feeder is chamfered to less than or equal to C0.3 or less than or equal to R0.3 at an edge of the end surface.
4 . The member for semiconductor manufacturing apparatus according to claim 1 , wherein the first brazing material layer contains an active metal, and
the second brazing material layer contains no active metal or less active metal content than the first brazing material layer.
5 . The member for semiconductor manufacturing apparatus according to claim 4 , wherein an interface between the first brazing material layer and the second brazing material layer is an area where components of the first brazing material layer and components of the second brazing material layer are diffused.
6 . The member for semiconductor manufacturing apparatus according to claim 1 , further comprising:
a cooling plate having electrical conductivity and located adjacent to a lower surface of the ceramic plate; and
a cooling plate through hole extending through the cooling plate in an up-down direction to be in communication with the power feeder receiving hole and through which the power feeder is inserted.