COMPONENT FOR SEMICONDUCTOR DEVICE FABRICATION APPARATUS, SEMICONDUCTOR DEVICE FABRICATION APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

1 . A component for a semiconductor device fabrication apparatus, the component comprising single-crystal silicon,

wherein, on at least one surface thereof, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

2 . The component according to claim 1 , wherein a surface free energy of the surface is 40 mN/m to 65 mN/m.

3 . The component according to claim 2 , wherein a dispersion free energy of the surface is 30 mN/m to 45 mN/m.

4 . The component according to claim 3 , wherein a polar free energy of the surface is 5 mN/m to 25 mN/m.

5 . The component according to claim 1 , further comprising:

a body portion formed to surround a semiconductor substrate;

an inclined portion formed to extend from the body portion toward a center of the semiconductor substrate; and

a guide portion formed to extend from the inclined portion toward a center of the semiconductor substrate and disposed below the semiconductor substrate,

wherein the body portion comprises an upper surface; and a lower surface facing the upper surface, and

wherein, on the upper surface, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

6 . The component according to claim 5 , wherein the inclined portion comprises an inclined surface extending from the upper surface in a direction inclined with respect to the upper surface, and

wherein, on the inclined surface, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

7 . The component according to claim 6 , wherein the guide portion comprises a guide surface extending from the inclined surface, and

wherein, on the guide surface, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

8 . The component according to claim 1 , wherein, on 70% or more of the total surface, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

9 . The component according to claim 5 , wherein the body portion, the inclined portion, and the guide portion are integrally formed of single-crystal silicon.

10 . The component according to claim 5 , wherein a surface free energy of the upper surface is 40 mN/m to 65 mN/m.

11 . The component according to claim 1 , further comprising:

an upper surface;

a lower surface facing the upper surface; and

through-holes formed to penetrate from the upper surface to the lower surface,

wherein, on the lower surface, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

12 . The component according to claim 5 , wherein, on the upper surface, a first reduced peak valley roughness is 0.005 μm to 2 μm, and

wherein the first reduced peak valley roughness is a sum of a first average height of peaks above a core surface (Spk) roughness of the upper surface and a first average depth of valleys below a core surface (Svk) roughness of the upper surface.

13 . The component according to claim 1 , wherein an Si—OH ratio on at least one surface thereof is 0.16 to 0.28,

wherein the Si—OH ratio is a value obtained by dividing an area of an Si—OH peak by an area of an Si single-crystal peak in a Raman spectrum of the surface,

the Si single-crystal peak is a peak at a Raman shift of 520 cm −1 to 522 cm −1 in the Raman spectrum of the surface, and

the Si—OH peak is a peak at a Raman shift of 940 cm −1 to 980 cm −1 in the Raman spectrum of the surface.

14 . A semiconductor device fabrication apparatus comprising:

a chamber for accommodating a semiconductor substrate;

an upper electrode that is disposed inside the chamber opposite the semiconductor substrate, and sprays a process gas;

an electrostatic chuck configured to support the semiconductor substrate and disposed below the semiconductor substrate; and

a focus ring formed to surround the semiconductor substrate and disposed on the electrostatic chuck,

wherein, on at least one surface of the focus ring or upper electrode, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

15 . The semiconductor device fabrication apparatus according to claim 14 , wherein the focus ring comprises a body portion formed to surround a semiconductor substrate;

an inclined portion formed to extend from the body portion toward a center of the semiconductor substrate; and

a guide portion formed to extend from the inclined portion toward a center of the semiconductor substrate and disposed below the semiconductor substrate,

wherein the body portion comprises an upper surface; and a lower surface facing the upper surface, and

wherein, on the upper surface, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

16 . The semiconductor device fabrication apparatus according to claim 15 , wherein, on the upper surface, a first reduced peak valley roughness is 0.005 μm to 2 μm, and

wherein the first reduced peak valley roughness is a sum of a first Spk roughness of the upper surface and a first Svk roughness of the upper surface.

17 . A semiconductor device fabrication apparatus according to claim 15 , wherein, on at least one surface of the focus ring or upper electrode, an Si—OH ratio is 0.16 to 0.28, and

wherein the Si—OH ratio is a value obtained by dividing an area of an Si—OH peak by an area of an Si single-crystal peak in a Raman spectrum of the surface,

the Si single-crystal peak is a peak at a Raman shift of 520 cm −1 to 522 cm −1 in the Raman spectrum of the surface, and

the Si—OH peak is a peak at a Raman shift of 940 cm −1 to 980 cm −1 in the Raman spectrum of the surface.

18 . A method of fabricating a semiconductor device, the method comprising:

placing a semiconductor substrate on a semiconductor device fabrication apparatus; and

treating the semiconductor substrate,

wherein the semiconductor device fabrication apparatus comprises a chamber for accommodating the semiconductor substrate;

an upper electrode disposed inside the chamber opposite the semiconductor substrate and sprays a process gas;

an electrostatic chuck configured to support the semiconductor substrate and disposed below the semiconductor substrate; and

a focus ring formed to surround the semiconductor substrate and disposed on the electrostatic chuck,

wherein, on at least one surface of the upper electrode and focus ring, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

19 . The method according to claim 18 , wherein the focus ring comprises a body portion formed to surround a semiconductor substrate;

an inclined portion formed to extend from the body portion toward a center of the semiconductor substrate; and

a guide portion formed to extend from the inclined portion toward a center of the semiconductor substrate and disposed below the semiconductor substrate,

wherein the body portion comprises an upper surface; and a lower surface facing the upper surface,

wherein, on the upper surface, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

20 . The method according to claim 19 , wherein, on the upper surface, a first reduced peak valley roughness is 0.005 μm to 2 μm, and

wherein the first reduced peak valley roughness is a sum of a first Spk roughness of the upper surface and a first Svk roughness of the upper surface.