Circuit and method for reducing driving losses in GAN switches
A half bridge circuit includes two GaN high electron mobility transistors (HEMT). A driver circuit generates a high side and low side driver signals corresponding to square wave. A driver deadtime is the period between during which both driver signals are low. A half bridge adjustment circuit is coupled between the driver and the half bridge circuit and generates a modified high side driver signal and a modified low side driver signal, each including a transition from a low voltage to an intermediate voltage during the corresponding deadtime and a transition from the intermediate voltage to a high voltage at an end of the corresponding deadtime. The half bridge adjustment circuit drives the gate terminals of the high side and low side transistors with the modified high side and low side driver signals.
1 . A method, comprising:
receiving, at a half bridge adjustment circuit, a first driver signal corresponding to a square wave;
receiving, at the half bridge adjustment circuit, a second driver signal corresponding to a square wave, wherein a first deadtime is a period between a falling edge of the second driver signal and a rising edge of the first driver signal, wherein the first deadtime includes a first portion and a second portion following the first portion;
generating, with the half bridge adjustment circuit, a first modified driver signal corresponding to the first driver signal with a transition from a low voltage to an intermediate voltage at a beginning of the second portion of the first deadtime and a transition from the intermediate voltage to a high voltage at an end of the first deadtime, wherein the first modified driver signal remains flat at the low voltage during the first portion of the first deadtime; and
driving a gate terminal of a first transistor of a half bridge circuit with the first modified driver signal, wherein a second deadtime is a period between a falling edge of the first driver signal and a rising edge of the second driver signal;
generating, with the half bridge adjustment circuit, a second modified driver signal corresponding to the second driver signal with a transition from the low voltage to the intermediate voltage during the second deadtime and a transition from the intermediate voltage to the high voltage at an end of the second deadtime; and
driving a gate terminal of a second transistor of the half bridge circuit with the second modified driver signal.
2 . The method of claim 1 , generating the first and second driver signals with a driver, wherein the half bridge adjustment circuit and the driver are implemented in a same integrated circuit die to the half bridge circuit.
3 . The method of claim 1 , generating the first and second driver signals with a driver, wherein the driver is implemented in an integrated circuit, wherein the half bridge adjustment circuit is coupled between the integrated circuit and the half bridge circuit.
4 . The method of claim 1 , comprising generating, with the half bridge adjustment circuit, a deadtime signal having a high logic level during the first deadtime and during the second deadtime and having a low logic level outside the first deadtime and the second deadtime.
5 . The method of claim 4 , comprising generating, with the half bridge adjustment circuit, a first deadtime control signal, wherein the first deadtime control signal includes a first transition during the first deadtime and a second transition at an end of the first deadtime.
6 . The method of claim 5 , wherein the first modified driver signal transitions to the intermediate voltage responsive to the first transition of the first deadtime control signal, wherein the first modified driver signal transitions to the high voltage response to the second transition of the first deadtime control signal.
7 . The method of claim 6 , generating, with the half bridge adjustment circuit, a second deadtime control signal, wherein the second deadtime control signal includes a first transition during the second deadtime and a second transition at an end of the second deadtime.
8 . The method of claim 5 , wherein the second modified driver signal transitions to the intermediate voltage responsive to the first transition of the second deadtime control signal, wherein the second modified driver signal transitions to the high voltage in response to the second transition of the second deadtime control signal.
9 . The method of claim 1 , wherein the low voltage level is less than 0 V; and
wherein the intermediate voltage is 0 V.
10 . The method of claim 1 , wherein the first transistor is a GaN transistor.
11 . A device, comprising:
a half bridge circuit including:
a high side transistor; and
a low side transistor coupled to the high side transistor at an intermediate node;
a driver configured to generate a high side driver signal corresponding to a square wave and a low side driver signal corresponding to a square wave, wherein a first deadtime is a period between a falling edge of the low side driver signal and a rising edge of the high side driver signal, wherein the first deadtime includes a first portion and a second portion following the first portion;
a half bridge adjustment circuit coupled between the driver and the half bridge circuit and configured to:
generate a modified high side driver signal corresponding to the high side driver signal with a transition from a low voltage to an intermediate voltage at a beginning of the second portion of the first deadtime and a transition from the intermediate voltage to a high voltage at an end of the first deadtime, wherein the first modified driver signal remains flat at the low voltage during the first portion of the first deadtime; and
drive a gate terminal of the high side transistor of a half bridge circuit with the modified high side driver signal, wherein:
a second deadtime is a period between a falling edge of the first driver signal and a rising edge of the second driver signal;
the half bridge adjustment circuit is configured to generate a modified low side driver signal corresponding to the low side driver signal with a transition from the low voltage to the intermediate voltage during the second deadtime and a transition from the intermediate voltage to the high voltage at an end of the second deadtime; and
the half bridge adjustment circuit is configured to drive a gate terminal of the low side transistor with the modified low side driver signal.
12 . The device of claim 11 , comprising an integrated circuit, wherein the driver and the half bridge adjustment circuit are implemented in the integrated circuit.
13 . The device of claim 11 , comprising:
a circuit board; and
an integrated circuit including the driver, wherein the integrated circuit, the half bridge adjustment circuit, and the half bridge circuit are mounted to the circuit board.
14 . The device of claim 11 , wherein the half bridge adjustment circuit is configured to generate a deadtime signal having a high logic level during the first deadtime and during the second deadtime and having a low logic level outside the first deadtime and the second deadtime, wherein the half bridge adjustment circuit is configured to generate a first deadtime control signal including a first transition during the first deadtime and a second transition at an end of the first deadtime.
15 . The device of claim 14 , wherein the half bridge adjustment circuit is configured to generate a second deadtime control signal including a first transition during the second deadtime and a second transition at an end of the second deadtime, wherein the second modified driver signal transitions to the intermediate voltage responsive to the first transition of the second deadtime control signal, wherein the second modified driver signal transitions to the high voltage response to the second transition of the second deadtime control signal.
16 . A method, comprising:
providing a first square wave from a driver to half bridge adjustment circuit coupled between the driver and a half-bridge resonant converter including a high side GaN high electron mobility transistor (HEMT) and a low side GaN HEMT, the first square wave having a high voltage value corresponding to a turn-on voltage of the HEMT and a low voltage value corresponding to a turn-off voltage of the HEMT and having a value less than 0 V;
providing a second square wave from the driver to the half bridge adjustment circuit, the first and second square waves having a relative phase that provides a deadtime during which both the first square wave and the second square wave are at the low voltage value; and
generating with the half bridge adjustment circuit, a first modified square wave in which the deadtime is divided into a first portion and a second portion, the first modified square wave being at the low voltage value during the first portion and at an intermediate voltage value during the second portion and including a transition from the low voltage value to the intermediate voltage value at a beginning of the second portion of the first deadtime, wherein the first modified driver signal remains flat at the low voltage value during the first portion of the first deadtime;
applying the first modified square wave to a gate terminal of the high side GaN HEMT;
generating, with the half-bridge adjustment circuit, a second modified square wave in which the deadtime is divided into a first half and a second half, the second modified square wave being at the low voltage value during the first portion and at the intermediate voltage value during the second portion; and
applying the second modified square wave to a gate terminal of the low side GaN HEMT.
17 . The method of claim 16 , wherein the half bridge adjustment circuit includes a NOR gate configured to receive the first square wave, a comparator coupled to the output of the NOR gate, an AND gate coupled to an output of the NOR gate, and a switch coupled between the AND gate and the gate terminal of the high side GaN HEMT.