Self-amplified resonators with embedded piezoresistive elements for high performance, ultra-low SWaP microwave and millimeter-wave applications
In one aspect, the disclosure relates to a super high frequency (SHF) or extremely high frequency (EHF) bulk acoustic resonator that includes a nanostructure, wherein the nanostructure includes a substrate, a three-dimensional structure disposed on the substrate, wherein the three-dimensional structure includes a planar structure including at least one nanocomponent and a matrix material contacting the nanocomponent on at least one side, the matrix material including an SiGe alloy or Ge. The disclosed bulk acoustic resonator operates at frequencies of from about 100 MHz to about 100 GHz, is capable of self-amplification upon application of direct current or voltage, and has a Q factor amplification exceeding 1. Also disclosed are methods for amplification of mechanical resonance in the disclosed bulk acoustic resonators and devices incorporating the bulk acoustic resonators.
1. A super high frequency (SHF) or extremely high frequency (EHF) bulk acoustic resonator comprising a nanostructure, the nanostructure comprising:
a substrate;
a three-dimensional structure disposed on the substrate, wherein the three-dimensional structure comprises a planar structure having a cross-sectional area comprising a first axis and a second axis and a width, and wherein the width comprises a dimension that is smaller than a dimension of the first axis and a dimension of the second axis, and wherein the planar structure comprises:
at least one n-type silicon nanocomponent extending along the first axis, the second axis, or both; and
a matrix material contacting the nanocomponent on at least one side, the matrix material comprising silicon (Si), a silicon:germanium (SiGe) alloy, or germanium (Ge);
wherein the at least one nanocomponent has a first dimension extending less than or equal to the width of the planar structure;
wherein the at least one nanocomponent comprises a plurality of nanosheets, wherein the plurality of nanosheets are parallel to the substrate, and wherein the matrix material is in the form of a plurality of matrix sheets, and where individual members of the plurality of nanosheets alternate in a stack with individual members of the plurality of matrix sheets.
2. The bulk acoustic resonator of claim 1 , wherein the first axis of the three-dimensional structure is parallel to the substrate and the second axis of the three-dimensional structure is perpendicular to the substrate.
3. The bulk acoustic resonator of claim 1 , wherein the first axis and the second axis of the three-dimensional structure are parallel to the substrate.
4. The bulk acoustic resonator of claim 1 , wherein the three-dimensional structure comprises a fin structure comprising a fin width of from about 20 to about 1000 nm.
5. The bulk acoustic resonator of claim 1 , wherein the three-dimensional structure comprises an outer surface comprising SiGe or Ge.
6. The bulk acoustic resonator of claim 1 , wherein the bulk acoustic resonator operates at a frequency of from about 100 MHz to about 100 GHz.
7. The bulk acoustic resonator of claim 1 , wherein the three-dimensional structure comprises a single crystal.
8. The bulk acoustic resonator of claim 1 , further comprising an n-type dopant in the at least one nanocomponent, the matrix material, or both.
9. The bulk acoustic resonator of claim 8 , wherein the n-type dopant comprises antimony (Sb), phosphorus (P), or arsenic (As).
10. The bulk acoustic resonator of claim 1 , wherein the at least one nanocomponent comprises a nanowire.
11. The bulk acoustic resonator of claim 1 , wherein the at least one nanocomponent comprises a nanosheet, wherein the nanosheet is perpendicular to the substrate.
12. The bulk acoustic resonator of claim 1 , wherein the at least one nanocomponent comprises two or more nanocomponents, and wherein at least a first one of the two or more nanocomponents differs in at least one dimension from at least a second one of the two or more nanocomponents.
13. The bulk acoustic resonator of claim 1 , wherein the resonator is partially suspended over a cavity and anchored to the substrate at one or more points.
14. The bulk acoustic resonator of claim 1 , further comprising an external dielectric layer conformally deposited on the three-dimensional structure.
15. The bulk acoustic resonator of claim 1 , further comprising a transducer, wherein the transducer comprises a piezoelectric or ferroic film sandwiched between a first conductive layer, wherein the first conductive layer is directly adjacent to the nanostructure or is a part of the nanostructure, and an external second conductive layer.
16. The bulk acoustic resonator of claim 15 , wherein the piezoelectric or ferroic film comprises aluminum nitride, scandium-doped aluminum nitride, hafnium-zirconium-oxide, or any combination thereof.
17. A device incorporating the bulk acoustic resonator of claim 1 .
18. The device of claim 17 , wherein the device comprises an oscillator, a filter, a sensor, an actuator, or a spectral processor for a wireless transceiver.