IP Library › Granted Patent US 12,300,711
Granted Patent B2
US 12,300,711 · App. 18/520,502 · Granted May 13, 2025

Integrated sensor for lifetime characterization

Inventors: Eric A.G. Webster (Santa Clara, CA); Changhoon Choi (Palo Alto, CA); Dajiang Yang (San Jose, CA); Xin Wang (San Jose, CA); Todd Rearick (Cheshire, CT); Kyle Preston (Guilford, CT); Ali Kabiri (Guilford, CT); Gerard Schmid (Guilford, CT)
Assignee: Quantum-Si Incorporated
H01L27/14643H01L27/14683
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Quick Facts
Patent No.
US 12,300,711
App. No.
18/520,502
Granted
May 13, 2025
Kind
B2
Abstract

Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.

Claims (87)

1. An integrated circuit, comprising:

a photodetection region;

at least one drain layer configured to receive incident photons and/or charge carriers via the photodetection region; and

at least one charge storage region electrically coupled to the photodetection region by a charge transfer channel region,

wherein the at least one drain layer is positioned, in a first direction in which the photodetection region is configured to receive incident photons, after the photodetection region, and at least a portion of the at least one drain layer is disposed after a first charge storage region of the at least one charge storage region in the first direction,

wherein the at least one drain layer includes a collection layer configured to provide the charge carriers to a direct current (DC) voltage when the collection layer is electrically coupled to the DC voltage, and the at least a portion of the at least one drain layer includes at least a portion of the collection layer,

wherein the at least one drain layer further includes a protection layer disposed between the collection layer and the photodetection region, the protection layer having a first conductivity type and the collection layer having a second conductivity type opposite the first conductivity type, and

wherein the at least one drain layer further comprises a first barrier region positioned after the first charge storage region in the first direction, wherein the first barrier region and the first charge storage region have opposite conductivity types.

2. The integrated circuit of claim 1 , further comprising a readout region electrically coupled to the at least one charge storage region by a second charge transfer channel region.

3. The integrated circuit of claim 1 , further comprising:

a drain region electrically coupled to the photodetection region by a drain charge transfer channel region; and

a drain transfer gate configured to control a transfer of charge carriers from the photodetection region to the drain region.

4. A system comprising the integrated circuit of claim 1 , wherein the system comprises:

a sample well configured to support a sample; and

a control circuit configured to control a transfer of first charge carriers from the photodetection region to the at least one charge storage region and to control a blocking of second charge carriers from reaching the at least one charge storage region,

wherein the first charge carriers are generated in the photodetection region in response to excitation light used to excite the sample to emit fluorescent light, and

wherein the second charge carriers are generated in the photodetection region in response to the fluorescent light.

5. An integrated circuit, comprising:

a photodetection region;

at least one drain layer configured to receive incident photons and/or charge carriers via the photodetection region; and

at least one charge storage region electrically coupled to the photodetection region by a charge transfer channel region,

wherein the at least one drain layer is positioned, in a first direction in which the photodetection region is configured to receive incident photons, after the photodetection region, and at least a portion of the at least one drain layer is disposed after a first charge storage region of the at least one charge storage region in the first direction,

wherein the at least one drain layer includes a collection layer configured to provide the charge carriers to a direct current (DC) voltage when the collection layer is electrically coupled to the DC voltage, and the at least a portion of the at least one drain layer includes at least a portion of the collection layer,

wherein the at least one drain layer further includes a protection layer disposed between the collection layer and the photodetection region, the protection layer having a first conductivity type and the collection layer having a second conductivity type opposite the first conductivity type, and

wherein the collection layer comprises:

a first portion positioned, in the first direction, after the photodetection region and positioned closer to the photodetection region than to the first charge storage region; and

a second portion positioned, in the first direction, after the first charge storage region and closer to the first charge storage region than to the photodetection region,

wherein the second portion is positioned closer to the first charge storage region than the first portion is to the photodetection region.

6. The integrated circuit of claim 5 , further comprising a readout region electrically coupled to the at least one charge storage region by a second charge transfer channel region.

7. The integrated circuit of claim 5 , further comprising:

a drain region electrically coupled to the photodetection region by a drain charge transfer channel region; and

a drain transfer gate configured to control a transfer of charge carriers from the photodetection region to the drain region.

8. A system comprising the integrated circuit of claim 5 , wherein the system comprises:

a sample well configured to support a sample; and

a control circuit configured to control a transfer of first charge carriers from the photodetection region to the at least one charge storage region and to control a blocking of second charge carriers from reaching the at least one charge storage region,

wherein the first charge carriers are generated in the photodetection region in response to excitation light that excites the sample to emit fluorescent light, and

wherein the second charge carriers are generated in the photodetection region in response to the fluorescent light.

9. An integrated circuit, comprising:

a photodetection region configured to generate charge carriers in response to receiving incident photons;

a first semiconductor region having a same semiconductor doping type as a semiconductor doping type of the photodetection region,

wherein the first semiconductor region is positioned, in a first direction in which the photodetection region is configured to receive incident photons, after the photodetection region and is configured to receive a direct current (DC) voltage attractive to the charge carriers;

a charge storage region configured to receive charge carriers from the photodetection region and spaced from the photodetection region in a second direction substantially perpendicular to the first direction,

wherein the first semiconductor region comprises:

a first portion positioned, in the first direction, after the photodetection region; and

a second portion positioned, in the first direction, after the charge storage region; and

a first barrier having a semiconductor doping type opposite a semiconductor doping type of the charge storage region and positioned between the charge storage region and the first portion of the first semiconductor region.

10. The integrated circuit of claim 9 , further comprising a readout region configured to receive charge carriers from the charge storage region.

11. The integrated circuit of claim 9 , further comprising:

a drain region configured to receive charge carriers from the photodetection region; and

a drain transfer gate configured to control a transfer of charge carriers from the photodetection region to the drain region.

12. A system comprising the integrated circuit of claim 9 , wherein the system comprises:

a sample well configured to support a sample; and

a control circuit configured to control a transfer of first charge carriers from the photodetection region to the charge storage region and to control a blocking of second charge carriers from reaching the charge storage region,

wherein the first charge carriers are generated in the photodetection region in response to excitation light that excites the sample to emit fluorescent light, and

wherein the second charge carriers are generated in the photodetection region in response to the fluorescent light.

13. An integrated circuit, comprising:

a photodetection region configured to generate charge carriers in response to receiving incident photons;

a charge storage region;

a first semiconductor region having a same semiconductor doping type as a semiconductor doping type of the photodetection region,

wherein the first semiconductor region is positioned, in a first direction in which the photodetection region is configured to receive incident photons, after the photodetection region and is configured to receive a direct current (DC) voltage attractive to the charge carriers; and

a second semiconductor region having a same semiconductor doping type as the semiconductor doping type of the photodetection region and positioned between the photodetection region and the first semiconductor region,

wherein:

the first semiconductor region comprises a first portion positioned, in the first direction, after the photodetection region, and a second portion positioned, in the first direction, after the charge storage region; and

the second semiconductor region comprises a first portion positioned between the photodetection region and the first portion of the first semiconductor region, and a second portion positioned between the charge storage region and the second portion of the first semiconductor region.

14. An integrated circuit, comprising:

a photodetection region configured to generate charge carriers in response to receiving incident photons;

a charge storage region configured to receive at least some of the charge carriers from the photodetection region;

a transfer gate configured to control a transfer of the at least some of the charge carriers from the photodetection region to the charge storage region; and

at least one semiconductor layer configured to attract and/or block at least some of the charge carriers, generated in the photodetection region, from leaving the photodetection region, the at least one semiconductor layer comprising:

a first semiconductor layer having a same semiconductor doping type as a semiconductor doping type of the photodetection region, the first semiconductor layer configured to receive a direct current (DC) voltage for attracting at least some of the charge carriers generated in the photodetection region,

wherein the photodetection region is positioned, in a first direction, after the transfer gate, and the at least one semiconductor layer is positioned, in the first direction, after the photodetection region, and

wherein the first semiconductor layer comprises:

a first portion positioned, in the first direction, after the photodetection region and positioned closer to the photodetection region than to the charge storage region; and

a second portion positioned, in the first direction, after the charge storage region and closer to the charge storage region than to the photodetection region,

wherein the second portion is positioned closer to the charge storage region than the first portion is to the photodetection region.

15. The integrated circuit of claim 14 , wherein the transfer gate is positioned on a first side of the integrated circuit and the photodetection region is configured to receive incident photons at the first side of the integrated circuit.

16. The integrated circuit of claim 14 , wherein the at least one semiconductor layer further comprises a second semiconductor layer having an opposite semiconductor doping type from the semiconductor doping type of the photodetection region, the second semiconductor layer positioned, in the first direction, between the photodetection region and the first semiconductor layer to block at least some of the charge carriers, generated in the photodetection region, from leaving the photodetection region.

17. The integrated circuit of claim 14 , further comprising a barrier having an opposite semiconductor doping type from the charge storage region and positioned, in the first direction, after the charge storage region to block at least some charge carriers from reaching the charge storage region.

18. The integrated circuit of claim 14 , further comprising a readout region configured to receive at least some of the charge carriers from the charge storage region.

19. The integrated circuit of claim 14 , further comprising:

a drain region configured to receive charge carriers from the photodetection region; and

a drain transfer gate configured to control a transfer of charge carriers from the photodetection region to the drain region.

20. A system comprising the integrated circuit of claim 14 , wherein the system comprises:

a sample well configured to support a sample; and

a control circuit configured to control a transfer of first charge carriers from the photodetection region to the charge storage region and to control a blocking of second charge carriers from reaching the charge storage region,

wherein the first charge carriers are generated in the photodetection region in response to excitation light that excites the sample to emit fluorescent light, and

wherein the second charge carriers are generated in the photodetection region in response to the fluorescent light.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2025
From: WANG, XIN
To: TESSERACT HEALTH, INC.
Reel/Frame 070505/0681 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2025
From: TESSERACT HEALTH, INC.
To: QUANTUM-SI INCORPORATED
Reel/Frame 070505/0769 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2025
From: CHOI, CHANGHOON; WEBSTER, ERIC A.G.; YANG, DAJIANG; REARICK, TODD; PRESTON, KYLE; KABIRI, ALI; SCHMID, GERARD
To: QUANTUM-SI INCORPORATED
Reel/Frame 070513/0447 →
Continuity (3)
Continuation 17149574 · Jan 14, 2021
Provisional Application 62961133 · Jan 14, 2020
Related Publication 20240096924A1 · Mar 21, 2024
References Cited (116)
US 5961924A · Reichert et al. · 1999 [cited by applicant]
US 6686582B1 · Volcker et al. · 2004 [cited by applicant]
US 6787308B2 · Balasubramanian et al. · 2004 [cited by applicant]
US 6844585B1 · Hopper et al. · 2005 [cited by applicant]
US 6917726B2 · Levene et al. · 2005 [cited by applicant]
US 7175811B2 · Bach et al. · 2007 [cited by applicant]
US 7426322B2 · Hyde · 2008 [cited by applicant]
US 7738086B2 · Shepard et al. · 2010 [cited by applicant]
US 7820983B2 · Lundquist et al. · 2010 [cited by applicant]
US 7834329B2 · Lundquist et al. · 2010 [cited by applicant]
US 7838847B2 · Lundquist et al. · 2010 [cited by applicant]
US 8053742B2 · Lundquist et al. · 2011 [cited by applicant]
US 8207509B2 · Lundquist et al. · 2012 [cited by applicant]
US 8274040B2 · Zhong et al. · 2012 [cited by applicant]
US 8278728B2 · Murshid · 2012 [cited by applicant]
US 8465699B2 · Fehr et al. · 2013 [cited by applicant]
US 8471219B2 · Lundquist et al. · 2013 [cited by applicant]
US 8471230B2 · Zhong et al. · 2013 [cited by applicant]
US 8502169B2 · Rigneault et al. · 2013 [cited by applicant]
US 8618507B1 · Lundquist et al. · 2013 [cited by applicant]
US 9029802B2 · Lundquist et al. · 2015 [cited by applicant]
US 9157864B2 · Fehr et al. · 2015 [cited by applicant]
US 9222123B2 · Zhong et al. · 2015 [cited by applicant]
US 9222133B2 · Lundquist et al. · 2015 [cited by applicant]
US 9223084B2 · Grot et al. · 2015 [cited by applicant]
US 9372308B1 · Saxena et al. · 2016 [cited by applicant]
US 9488584B2 · McCaffrey et al. · 2016 [cited by applicant]
US 9587276B2 · Lundquist et al. · 2017 [cited by applicant]
US 9606060B2 · Chen et al. · 2017 [cited by applicant]
US 9658161B2 · Saxena et al. · 2017 [cited by applicant]
US 9666748B2 · Leobandung · 2017 [cited by applicant]
US 9719138B2 · Zhong et al. · 2017 [cited by applicant]
US 9765395B2 · Goldsmith · 2017 [cited by applicant]
US 9946017B2 · Saxena et al. · 2018 [cited by applicant]
US 10018764B2 · Grot et al. · 2018 [cited by applicant]
US 10090429B2 · Leobandung · 2018 [cited by applicant]
US 10138515B2 · Fehr et al. · 2018 [cited by applicant]
US 10280457B2 · Zhong et al. · 2019 [cited by applicant]
US 10310178B2 · Saxena et al. · 2019 [cited by applicant]
US 10487356B2 · Lundquist et al. · 2019 [cited by applicant]
US 10578788B2 · Grot et al. · 2020 [cited by applicant]
US 10655172B2 · Rank et al. · 2020 [cited by applicant]
US 10724090B2 · McCaffrey et al. · 2020 [cited by applicant]
US 11869917B2 · Webster et al. · 2024 [cited by applicant]
US 20020182716A1 · Weisbuch et al. · 2002 [cited by applicant]
US 20030174992A1 · Levene et al. · 2003 [cited by applicant]
US 20040169842A1 · Dosluoglu et al. · 2004 [cited by applicant]
US 20100065726A1 · Zhong et al. · 2010 [cited by applicant]
US 20110187908A1 · Kawahito et al. · 2011 [cited by applicant]
US 20110204467A1 · Ohchi et al. · 2011 [cited by applicant]
US 20110298079A1 · Kawahito · 2011 [cited by applicant]
US 20120273653A1 · Hynecek et al. · 2012 [cited by applicant]
US 20130070131A1 · Ohkubo et al. · 2013 [cited by applicant]
US 20130116153A1 · Bowen et al. · 2013 [cited by applicant]
US 20140077283A1 · Lenchenkov · 2014 [cited by applicant]
US 20140252437A1 · Oh et al. · 2014 [cited by applicant]
US 20140284454A1 · Krymski · 2014 [cited by applicant]
US 20150141267A1 · Rothberg et al. · 2015 [cited by applicant]
US 20150264287A1 · Shimotsusa et al. · 2015 [cited by applicant]
US 20160084761A1 · Rothberg et al. · 2016 [cited by applicant]
US 20160133668A1 · Rothberg et al. · 2016 [cited by applicant]
US 20160181298A1 · Wan et al. · 2016 [cited by applicant]
US 20160344156A1 · Rothberg et al. · 2016 [cited by applicant]
US 20170146479A1 · Levine et al. · 2017 [cited by applicant]
US 20170184500A1 · Astier et al. · 2017 [cited by applicant]
US 20170261738A1 · Shiono · 2017 [cited by applicant]
US 20170276686A1 · Marcotte et al. · 2017 [cited by applicant]
US 20180172906A1 · Rothberg et al. · 2018 [cited by applicant]
US 20180173000A1 · Rothberg et al. · 2018 [cited by applicant]
US 20180175582A1 · Rothberg et al. · 2018 [cited by applicant]
US 20180180546A1 · Rothberg · 2018 [cited by examiner]
US 20190025214A1 · Rothberg et al. · 2019 [cited by applicant]
US 20190025511A1 · Rothberg et al. · 2019 [cited by applicant]
US 20190292590A1 · Zhong et al. · 2019 [cited by applicant]
US 20190360042A1 · Fehr et al. · 2019 [cited by applicant]
US 20190391010A1 · Thurston et al. · 2019 [cited by applicant]
US 20200072752A1 · Cipriany · 2020 [cited by applicant]
US 20200295076A1 · Lee · 2020 [cited by examiner]
US 20200408690A1 · Yang et al. · 2020 [cited by applicant]
US 20210217800A1 · Webster et al. · 2021 [cited by applicant]
US 20230223419A1 · Schmid et al. · 2023 [cited by applicant]
CN 104835825A · 2015 [cited by applicant]
EP 2182523A1 · 2010 [cited by applicant]
EP 2487897A1 · 2012 [cited by applicant]
EP 3483938A1 · 2019 [cited by applicant]
JP 2010040594A · 2010 [cited by applicant]
JP 2011077498A · 2011 [cited by applicant]
JP 2013172136A · 2013 [cited by applicant]
JP 2017531356A · 2017 [cited by applicant]
WO WO2010025331A1 · 2010 [cited by applicant]
WO WO2011103507A1 · 2011 [cited by applicant]
WO WO2011153962A1 · 2011 [cited by applicant]
WO WO2016022998A2 · 2016 [cited by applicant]
WO WO2016128198A1 · 2016 [cited by applicant]
WO WO2016187580A1 · 2016 [cited by applicant]
WO WO2017115633A1 · 2017 [cited by applicant]
WO WO2017210413A1 · 2017 [cited by applicant]
Extended European Search Report for European Application No. 18202357.2 dated Mar. 15, 2019. [cited by applicant]
Invitation to Pay Additional Fees for International Application No. PCT/US2015/044360 mailed Nov. 20, 2015. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2015/044360 mailed Feb. 3, 2016. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2017/068089 dated Mar. 27, 2018. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2019/038105 mailed Nov. 26, 2019. [cited by applicant]
Invitation to Pay Additional Fees for International Application No. PCT/US2019/048824 mailed Dec. 9, 2019. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2019/048824 mailed Jan. 31, 2020. [cited by applicant]
Invitation to Pay Additional Fees for International Application No. PCT/US2019/038105 mailed Sep. 16, 2019. [cited by applicant]
Invitation to Pay Additional Fees for International Application No. PCT/US2020/039868 mailed Oct. 22, 2020. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2020/039868 mailed Dec. 15, 2020. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2021/013501 mailed Apr. 14, 2021. [cited by applicant]
Invitation to Pay Additional Fees for International Application No. PCT/US2023/010577 mailed Apr. 3, 2023. [cited by applicant]
International Preliminary Report on Patentability for International Application No. PCT/US2021/013501 mailed Jul. 28, 2022. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2023/010577 mailed Jun. 27, 2023. [cited by applicant]
Hale, Fibre Optic Sensors using Adiabatically Tapered Single Mode Fibres. Dissertation submitted to the University of Cambridge. Feb. 1994. 209 pages. [cited by applicant]
Mogensen et al., A Microfluidic Device with an Integrated Waveguide Beam Splitter for Velocity Measurements of Flowing Particles by Fourier Transformation. Analytical Chemistry. Sep. 15, 2003;75(18):4931-4936. [cited by applicant]
Swaminathan et al. A theoretical justification for single molecule peptide sequencing. PLOS Comput Biol. Feb. 25, 2015;11(2):e1004080. 17 pages. [cited by applicant]
Taitt et al., Evanescent wave fluorescence biosensors. Biosens Bioelectron. Jun. 2005;20(12):2470-87. Epub Dec. 8, 2004. [cited by applicant]
Yao et al., Single-molecule protein sequencing through fingerprinting: computational assessment. Physical biology. Aug. 11, 2015;12(5):055003. 7 pages. [cited by applicant]