System and method for overlay metrology using a phase mask
An overlay metrology system is disclosed. The overlay metrology system may include a controller with one or more processors. The processors may be configured to execute program instructions causing the processors to receive pupil images of collected light from an overlay target and receive a known phase distribution to be introduced to an illumination beam directed at the overlay target. The processors may model an intensity function relating the pupil images, the known phase distribution, and one or more decentered shift parameters of structures of the overlay target. The processors may fit the pupil images to the intensity function depending on the known phase distribution and the decentered shift parameters. The processors may generate an overlay measurement based on the fit.
1. An overlay metrology system comprising:
a controller including one or more processors configured to execute program instructions causing the one or more processors to:
receive pupil images of collected light emanating from an overlay target and receive a known phase distribution configured to be introduced to an illumination beam directed at the overlay target;
model an intensity function that relates the pupil images, the known phase distribution, and one or more decentered shift parameters of structures of the overlay target;
fit the pupil images to the intensity function that depends on at least the known phase distribution and the one or more decentered shift parameters of structures of the overlay target; and
generate an overlay measurement based on the fit.
2. The overlay metrology system of claim 1 , wherein the overlay target is a single cell overlay target.
3. The overlay metrology system of claim 1 , wherein the fit comprises a linear-regression pattern fitting.
4. The overlay metrology system of claim 1 , wherein the fit comprises a first pattern fitting and a second pattern fitting, wherein the first pattern fitting is based on a first order diffraction overlap region of the pupil images, wherein the second pattern fitting is based on a second order diffraction overlap region of the pupil images.
5. The overlay metrology system of claim 1 , wherein the fit is based on a calibrating of a phase mask configured to cause the known phase distribution.
6. The overlay metrology system of claim 1 , wherein the overlay target comprises at least one of: a Moiré fringe overlay target or a common-pitch overlay target.
7. The overlay metrology system of claim 1 , further comprising performing a defocus adjustment of the overlay target, wherein the fit is based on an amount of the defocus adjustment performed, wherein the known phase distribution is based on the amount of the defocus adjustment performed.
8. The overlay metrology system of claim 7 , wherein the receiving the pupil images comprises performing a plurality of defocus adjustments of the overlay target.
9. The overlay metrology system of claim 1 , wherein the receiving the pupil images comprises receiving a plurality of pupil images of a plurality of spot locations of a cell of the overlay target; and wherein the fit is based on the plurality of pupil images.
10. The overlay metrology system of claim 1 , wherein the known phase distribution comprises an F1 type phase distribution which is wavelength-independent and characterizable in a form of at least one of:
F 1 ( NA x ,NA y )= NA x NA y +constant; or
F 1 ( NA x ,NA y )= NA x |NA y |+constant.
11. The overlay metrology system of claim 10 , wherein the introduction of the known phase distribution to the illumination beam is performed via a phase mask of the F1 type phase distribution of the system.
12. The overlay metrology system of claim 10 , wherein the fit of the pupil images to the intensity function is performed simultaneously for a +1 first order diffraction intensity function and a −1 first order diffraction intensity function for the F1 type phase distribution.
13. The overlay metrology system of claim 1 , wherein the known phase distribution comprises an F2 type phase distribution which is wavelength-independent and characterizable in a form of at least one of:
F 2 ( NA x ,NA y )= NA x 2 +constant; or
F 2 ( NA x ,NA y )= NA x 2 +NA y 2 +constant.
14. The overlay metrology system of claim 13 , wherein the introduction of the known phase distribution to the illumination beam is performed via a phase mask of the F2 type phase distribution of the system.
15. The overlay metrology system of claim 13 , wherein the fit of the pupil images to the intensity function is performed sequentially for a +1 first order diffraction intensity function and a −1 first order diffraction intensity function for the F2 type phase distribution.
16. The overlay metrology system of claim 15 , wherein the phase mask of the F2 type phase distribution comprises at least one of:
a toric lens;
a cylindrical plano-convex lens; or
a defocused pupil-plane apodizer.
17. The overlay metrology system of claim 1 , wherein the fit of the pupil images comprises multiple fits configured to simultaneously solve for an effective mask height (nh), an optical stack thickness (Δ), and the overlay measurement, the multiple fits scanning a parameter space of the nh and the Δ.
18. An overlay metrology system comprising:
an optical sub-system comprising:
an illumination source configured to generate an illumination beam;
an objective lens configured to direct the illumination beam to an overlay target of a sample;
a phase mask configured to cause a known phase distribution in a portion of the illumination beam;
a detector configured to receive pupil images of collected light emanating from the overlay target; and
a controller communicatively coupled to the detector, the controller including one or more processors configured to execute program instructions causing the one or more processors to:
receive the pupil images of the collected light emanating from the overlay target and receive the known phase distribution configured to be introduced to the portion of the illumination beam directed at the overlay target;
model an intensity function that relates the pupil images, the known phase distribution, and one or more decentered shift parameters of structures of the overlay target;
fit the pupil images to the intensity function that depends on at least the known phase distribution and the one or more decentered shift parameters of structures of the overlay target; and;
generate an overlay measurement based on the fit.
19. The overlay metrology system of claim 18 , wherein the overlay target is a single cell overlay target.
20. The overlay metrology system of claim 18 , wherein the fit comprises a linear-regression pattern fitting.
21. The overlay metrology system of claim 18 , wherein the fit comprises a first pattern fitting and a second pattern fitting, wherein the first pattern fitting is based on a first order diffraction overlap region of the pupil images, wherein the second pattern fitting is based on a second order diffraction overlap region of the pupil images.
22. The overlay metrology system of claim 18 , wherein the fit is based on a calibrating of the phase mask configured to cause the known phase distribution.
23. The overlay metrology system of claim 18 , wherein the overlay target comprises at least one of: a Moiré fringe overlay target or a common-pitch overlay target.
24. The overlay metrology system of claim 18 , further comprising performing a defocus adjustment of the overlay target, wherein the fit is based on an amount of the defocus adjustment performed, wherein the known phase distribution is based on the amount of the defocus adjustment performed.
25. The overlay metrology system of claim 24 , wherein the receiving the pupil images comprises performing a plurality of defocus adjustments of the overlay target.
26. The overlay metrology system of claim 18 , wherein the receiving the pupil images comprises receiving a plurality of pupil images of a plurality of spot locations of a cell of the overlay target; and wherein the fit is based on the plurality of pupil images.
27. A method comprising:
directing an illumination beam comprising a known phase distribution to illuminate an overlay target;
receiving pupil images of collected light emanating from the overlay target;
modeling an intensity function that relates the pupil images, the known phase distribution, and one or more decentered shift parameters of structures of the overlay target;
fitting the pupil images to the intensity function that depends on at least the known phase distribution and the one or more decentered shift parameters of structures of the overlay target; and
generating an overlay measurement based on the fit.
28. The method of claim 27 , wherein the overlay target is a single cell overlay target.
29. The method of claim 27 , wherein the fit comprises a linear-regression pattern fitting.
30. The method of claim 27 , wherein the fit comprises a first pattern fitting and a second pattern fitting, wherein the first pattern fitting is based on a first order diffraction overlap region of the pupil images, wherein the second pattern fitting is based on a second order diffraction overlap region of the pupil images.
31. The method of claim 27 , wherein the fit is based on a calibrating of a phase mask configured to cause the known phase distribution.
32. The method of claim 27 , wherein the overlay target comprises at least one of: a Moiré fringe overlay target or a common-pitch overlay target.
33. The method of claim 27 , further comprising performing a defocus adjustment of the overlay target, wherein the fit is based on an amount of the defocus adjustment performed, wherein the known phase distribution is based on the amount of the defocus adjustment performed.
34. The method of claim 33 , wherein the receiving the pupil images comprises performing a plurality of defocus adjustments of the overlay target.
35. The method of claim 27 , wherein the receiving the pupil images comprises receiving a plurality of pupil images of a plurality of spot locations of a cell of the overlay target; and wherein the fit is based on the plurality of pupil images.
36. The method of claim 27 , wherein the known phase distribution comprises an F1 type phase distribution which is wavelength-independent and characterizable in a form of at least one of:
F 1 ( NA x ,NA y )= NA x NA y +constant; or
F 1 ( NA x ,NA y )= NA x |NA y |+constant.
37. The method of claim 36 , wherein an introduction of the known phase distribution to the illumination beam is performed via a phase mask of the F1 type phase distribution.
38. The method of claim 27 , wherein the known phase distribution comprises an F2 type phase distribution which is wavelength-independent and characterizable in a form of at least one of:
F 2 ( NA x ,NA y )= NA x 2 +constant; or
F 2 ( NA x ,NA y )= NA x 2 +NA y 2 +constant.