Method for depositing boron nitride
Methods for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods that can be used for depositing a boron nitride film by a PECVD process. The method comprises providing a substrate into a reaction chamber, and executing a cyclical deposition process comprising a plurality of deposition cycles, ones from the plurality of deposition cycles including providing a boron precursor into the reaction chamber and providing a deposition plasma gas into the reaction chamber.
1 . A method for forming a film comprising boron nitride on a surface of a substrate, the method comprising:
providing a substrate into a reaction chamber; and
executing a cyclical deposition process comprising a plurality of deposition cycles, ones from the plurality of deposition cycles comprising:
pulsing a boron precursor into the reaction chamber;
providing a deposition plasma gas into the reaction chamber; and
generating a deposition plasma,
wherein the boron precursor has a structure that corresponds to the general formula:
wherein at least two of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are a halogen, and
wherein, during the ones from the plurality of deposition cycles, the deposition plasma is provided continuously into the reaction chamber for a first duration, and wherein the boron precursor is pulsed into the reaction chamber for a second duration which is less than the first duration.
2 . The method according to claim 1 , wherein at least three of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are a halogen.
3 . The method according to claim 2 , wherein the halogen is chlorine.
4 . The method according to claim 1 , wherein R 1 , R 3 and R 5 are a halogen and each of R 2 , R 4 and R 6 is selected from the group consisting of H and an alkyl group.
5 . The method according to claim 4 , wherein the alkyl group is methyl.
6 . The method according to claim 1 , wherein R 2 , R 4 and R 6 are a halogen and each of R 1 , R 3 and R 5 is selected from the group consisting of H and an alkyl group.
7 . The method according to claim 1 , wherein the boron precursor comprises trichloroborazine.
8 . The method according to claim 1 , wherein the method further comprises providing a curing plasma gas into the reaction chamber, and generating a curing plasma.
9 . The method according to claim 8 , wherein the deposition plasma and curing plasma comprises at least one compound selected from the group consisting of hydrogen, noble gas and nitrogen.
10 . The method according to claim 9 , wherein at least one of the deposition plasma or the curing plasma comprises hydrogen.
11 . The method according to claim 8 , wherein the curing plasma gas is provided into the reaction chamber after the deposition plasma.
12 . The method according to claim 8 , wherein the deposition plasma and the curing plasma are provided directly using capacitively coupled plasma.
13 . The method according to claim 1 , wherein a pressure within the reaction chamber is between 120 Pa and 2000 Pa.
14 . The method according to claim 1 , wherein the temperature within the reaction chamber is between 75° C. and 500° C.
15 . The method according to claim 1 , wherein the deposition plasma is generated using an RF power of between about 25 W and about 500 W for a 300 mm substrate.
16 . The method according to claim 1 , wherein at least one of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is an alkyl group.
17 . The method according to claim 1 , wherein the deposition plasma comprises hydrogen or a noble gas.