COMPOUND, PHOTOELECTRIC DEVICE, LIGHT ABSORPTION SENSOR, SENSOR EMBEDDED DISPLAY PANEL, AND ELECTRONIC DEVICE
Provided are a compound represented by Chemical Formula 1A or 1B and a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device including the same. Details for Chemical Formulas 1A and 1B are as described in the detailed description.
1 . A compound represented by Chemical Formula 1A or 1B:
wherein, in Chemical Formulas 1A and 1B,
G is NR a , CR b R c , SiR d R e , GeR f R g , O, S, Se, or Te, wherein
R a , R b , R c , R d , R e , R f , and R g are each independently hydrogen, deuterium, a C1 to C10 alkyl group, or a C1 to C10 alkoxy group,
R b , R c , R d , R e , R f , and R g are each independently present, or one pair of R b and R c , R d and R e , or R f and R g is linked to each other to form a spiro structure,
X 1 and X 2 are each independently O, S, Se, or Te,
A 1 and A 2 are each independently one of the moieties represented by Chemical Formulas 2A to 2H,
wherein, in Chemical Formulas 2A to 2H,
Y 1 and Y 2 are each independently O, S, Se, or Te,
R x is hydrogen, deuterium, a C1 to C10 alkyl group, or a C1 to C10 alkoxy group, x is an integer of 1 to 3,
R y is hydrogen, deuterium, a halogen, a cyano group, a hydroxyl group, an amine group, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C1 to C10 alkoxy group, y is an integer of 1 to 3,
R z , R z1 , and R z2 are each independently hydrogen, deuterium, a C1 to C10 alkyl group, or a C1 to C10 alkoxy group, z is an integer of 1 or 2,
R w is hydrogen, deuterium, a halogen, a cyano group, a hydroxyl group, an amine group, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C1 to C10 alkoxy group, w is an integer of 1 to 4,
—CH═ constituting the benzene ring is unsubstituted or substituted with —N═, and
* refers to a linking position with Chemical Formulas 1A and 1B.
2 . The compound of claim 1 , wherein
in Chemical Formulas 1A and 1B, G is different from X 1 and X 2 .
3 . The compound of claim 1 , wherein
in Chemical Formulas 1A and 1B, X 1 and X 2 are the same or different from each other.
4 . The compound of claim 1 , wherein
in Chemical Formulas 1A and 1B, R a , R b , R c , R d , R e , R f and R g do not include an electron withdrawing group.
5 . The compound of claim 1 , wherein
in Chemical Formulas 1A and 1B,
G is CR b R c , SiR d R e , or GeR f R g ,
one pair of R b and R c , R d and R e , or R f and R g is linked to each other to form the spiro structure,
the spiro structure includes a moiety represented by Chemical Formula 3:
wherein, in Chemical Formula 3,
Ar 33 and Ar 34 are each independently a substituted or unsubstituted C6 to C10 arene group, a substituted or unsubstituted C3 to C10 heteroarene group, or a condensed ring thereof, and
* refers to a linking position with Chemical Formulas 1A and 1B.
6 . The compound of claim 1 , wherein
in Chemical Formulas 1A and 1B,
G is CR b R c , SiR d R e , or GeR f R g ,
one pair of R b and R c , R d and R e , or R f and R g is linked to each other to form the spiro structure,
the spiro structure includes one of the moieties listed in Group 2:
wherein, in Group 2,
X a and X b are each independently O, S, Se, or Te,
L a is O, S, Se, or Te,
at least one hydrogen of each ring structure is independently present or is replaced by at least one substituent selected from deuterium, a C1 to C10 alkyl group, or a C1 to C10 alkoxy group, and
* refers to a linking position with Chemical Formulas 1A and 1B.
7 . The compound of claim 6 , wherein
in Group 2, at least one CH present in the aromatic ring of moiety (3), (4), (5), (6), (7), (8), or (9) is unreplaced or replaced by N.
8 . The compound of claim 1 , wherein
a sublimation temperature of the compound represented by Chemical Formula 1A or 1B is less than or equal to 230° C.
9 . The compound of claim 1 , wherein
the compound represented by Chemical Formula 1A or 1B has an aspect ratio (Z/X) of less than or equal to 0.65, obtained by dividing a shortest axis length (Z) by a longest axis length (X).
10 . The compound of claim 1 , wherein
the compound represented by Chemical Formula 1A or 1B is a p-type semiconductor.
11 . A photoelectric device, comprising
a first electrode and a second electrode facing each other, and
a light absorbing layer between the first electrode and the second electrode,
wherein the light absorbing layer includes the compound of claim 1 .
12 . The photoelectric device of claim 11 , wherein
the light absorbing layer includes a p-type semiconductor and an n-type semiconductor, and
the p-type semiconductor includes the compound of claim 1 , and
the n-type semiconductor includes fullerene, fullerene derivative, sub-phthalocyanine or a sub-phthalocyanine derivative, thiophene or a thiophene derivative, a compound represented by Chemical Formula 4, or any combination thereof,
wherein, in Chemical Formula 4,
X 5 and X 6 are each independently O or NR a , wherein R a is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, and
R 81 to R 84 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or any combination thereof.
13 . A light absorption sensor comprising:
the photoelectric device of claim 11 .
14 . A sensor-embedded display panel, comprising
a substrate,
a light emitting element on the substrate and including a light emitting layer, and
a light absorption sensor on the substrate and including a light absorbing layer, the light absorbing layer being arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the light absorbing layer and the light emitting layer at least partially overlap in the in-plane direction,
wherein the light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or any combination thereof,
the light absorbing layer includes a p-type semiconductor and an n-type semiconductor, and
the p-type semiconductor includes the compound of claim 1 .
15 . The sensor-embedded display panel of claim 14 , wherein
the light emitting element includes a first light emitting element, a second light emitting element, and a third light emitting element respectively configured to emit light of different wavelength spectra,
the light absorption sensor is configured to absorb reflected emitted light and convert absorbed reflected emitted light into an electrical signal, and
the reflected emitted light is light emitted from at least one of the first light emitting element, the second light emitting element, and the third light emitting element and then reflected by a recognition target to the sensor and converted into the electrical signal.
16 . The sensor-embedded display panel of claim 14 , further comprising:
a common electrode configured to apply a common voltage to the light emitting layer and the light absorbing layer; and
a first common auxiliary layer continuously formed between the light emitting layer and the common electrode and between the light absorbing layer and the common electrode.
17 . The sensor-embedded display panel of claim 14 , further comprising:
a second common auxiliary layer extending continuously between the light emitting layer and the substrate and between the light absorbing layer and the substrate.
18 . The sensor-embedded display panel of claim 14 , wherein
the light emitting element includes a first light emitting element, a second light emitting element, and a third light emitting element respectively configured to emit any one of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, and
the light absorbing layer is configured to absorb light having a same wavelength spectrum as light emitted from at least one of the first light emitting element, the second light emitting element, and the third light emitting element.
19 . The sensor-embedded display panel of claim 14 , wherein
fullerene, a fullerene derivative, sub-phthalocyanine or a sub-phthalocyanine derivative, thiophene or a thiophene derivative, a compound represented by Chemical Formula 4, or any combination thereof is used as an n-type semiconductor:
wherein, in Chemical Formula 4,
X 5 and X 6 are each independently O or NR a , wherein R a is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, or a cyano group, and
R 81 to R 84 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or any combination thereof.
20 . An electronic device comprising:
the photoelectric device of claim 11 .