Granted Patent B2

US 12,630,943 · App. 18/549,050 · Granted May 19, 2026

Inventors: Lin Dong (Spånga, SE); Kassem Alassaad (Järfälla, SE); Johan Peter Ekman (Saltsjöbaden, SE)

Assignee: KISELKARBID I STOCKHOLM AB

C30B29/36C30B23/02C30B35/002

Abstract

Claims (35)

1 . A system for simultaneously producing a first and a second epitaxial monocrystalline layer on a respective first and second substrate, comprising:

a first inner container defining a first cavity for accommodating a first monolithic silicon carbide source material and the first substrate, the first monolithic silicon carbide source material being arranged below the first substrate;

a second inner container defining a second cavity for accommodating a second monolithic silicon carbide source material and the second substrate, the second monolithic silicon carbide source material being arranged above the second substrate;

an insulation container arranged to accommodate the first and second inner containers therein;

an outer container arranged to accommodate the insulation container and the first and second inner containers therein; and

heating means arranged outside the outer container and configured to heat the first and second cavities simultaneously;

wherein the first inner container is arranged above the second inner container.

2 . The system according to claim 1 , further comprising a heating body arranged within the insulation container, between the first and second inner containers, and wherein the heating means is further configured to heat the heating body and the first and second cavities simultaneously.

3 . The system according to claim 2 , wherein the first inner container, the second inner container and the heating body are formed in one piece.

4 . The system according to claim 1 , wherein the first and second inner containers are cylindrical in shape and have the same diameter.

5 . The system according to claim 1 , wherein

the first inner container comprises an upper part and a bottom part;

the second inner container comprises an upper part and a bottom part; and

the bottom part of the first inner container is essentially identical to the upper part of the second inner container.

6 . The system according to claim 1 , further comprising

a first means for arranging the first monolithic silicon carbon source material at a predetermined distance from the first substrate in the first cavity; and

a second means for arranging the second monolithic silicon carbon source material at a predetermined distance from the second substrate in the second cavity.

7 . The system according to claim 1 , wherein the insulation container and the outer container are cylindrical in shape, and the first and second monolithic silicon carbide source materials and the first and second substrates are disk-shaped.

8 . The system according to claim 1 , further comprising

a first carbon getter arranged inside the first inner container, and

a second carbon getter arranged inside the second inner container.

9 . The system according to claim 1 , wherein the heating means is movable along the outer container.

10 . A method of simultaneously producing a first and a second epitaxial monocrystalline layer on a respective first and second substrate comprising:

providing a first inner container defining a first cavity for accommodating a first monolithic silicon carbon source material and the first substrate;

providing a second inner container defining a second cavity for accommodating a second monolithic silicon carbon source material and the second substrate;

arranging the first monolithic silicon carbon source material below the first substrate in the first cavity and the second monolithic silicon carbon source material above the second substrate in the second cavity;

arranging the first and second inner containers within an insulation container, wherein the first inner container is arranged above the second inner container;

arranging the insulation container within an outer container providing heating means outside the outer container to heat the first and second cavities simultaneously;

evacuating the first and second cavities to a predetermined pressure;

introducing an inert gas into the first and second cavities;

raising the temperature in the first and second cavities simultaneously to a predetermined growth temperature by the heating means;

maintaining the predetermined growth temperature in the first and second cavities until a predetermined thickness of the first and second epitaxial monocrystalline layers on the respective first and second substrates have been achieved;

cooling the first and second substrates.

11 . The method according to claim 10 , further comprising providing a heating body between the first inner container and the second inner container.

12 . The method according to claim 11 , wherein the step of raising the temperature of the first and second cavities further comprises simultaneously raising the temperature of the heating body.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (16)