Magnetic sensor and magnetic detection system
View Patent ↗A magnetic sensor includes at least one bias magnet, a first half-bridge circuit, a second half-bridge circuit, and a base member. The first half-bridge circuit includes a pair of first magnetoresistive effect elements to one of which a bias magnetic field aligned with a positive direction of an X-axis is applied and to the other of which a bias magnetic field aligned with a negative direction of the X-axis is applied. The second half-bridge circuit includes a pair of second magnetoresistive effect elements to one of which a bias magnetic field aligned with a positive direction of a Y-axis is applied and to the other of which a bias magnetic field aligned with a negative direction of the Y-axis is applied.
1. A magnetic sensor comprising:
at least one bias magnet configured to generate a bias magnetic field aligned with a positive direction of an X-axis, a bias magnetic field aligned with a negative direction of the X-axis, a bias magnetic field aligned with a positive direction of a Y-axis orthogonal to the X-axis, and a bias magnetic field aligned with a negative direction of the Y-axis;
a first half-bridge circuit;
a second half-bridge circuit; and
a base member holding the at least one bias magnet, the first half-bridge circuit, and the second half-bridge circuit,
the first half-bridge circuit including
a pair of first magnetoresistive effect elements half-bridge connected to each other and configured to detect a magnetic field aligned with the X-axis and
a first output terminal configured to output a first output signal from a connection point between the pair of first magnetoresistive effect elements,
the second half-bridge circuit including
a pair of second magnetoresistive effect elements half-bridge connected to each other and configured to detect a magnetic field aligned with the Y-axis and
a second output terminal configured to output a second output signal from a connection point between the pair of second magnetoresistive effect elements,
the bias magnetic field aligned with the positive direction of the X-axis being applied to one of the pair of first magnetoresistive effect elements,
the bias magnetic field aligned with the negative direction of the X-axis being applied to the other of the pair of first magnetoresistive effect elements,
the bias magnetic field aligned with the positive direction of the Y-axis being applied to one of the pair of second magnetoresistive effect elements,
the bias magnetic field aligned with the negative direction of the Y-axis being applied to the other of the pair of second magnetoresistive effect elements.
2. The magnetic sensor of claim 1 , wherein
the at least one bias magnet includes a single bias magnet configured to generate the bias magnetic field aligned with the positive direction of the X-axis and the bias magnetic field aligned with the negative direction of the X-axis.
3. The magnetic sensor of claim 2 , wherein
the at least one bias magnet includes a single bias magnet configured to generate the bias magnetic field aligned with the positive direction of the X-axis, the bias magnetic field aligned with the negative direction of the X-axis, the bias magnetic field aligned with the positive direction of the Y-axis, and the bias magnetic field aligned with the negative direction of the Y-axis.
4. The magnetic sensor of claim 1 , wherein
among the pair of first magnetoresistive effect elements or the pair of second magnetoresistive effect elements, at least one magnetoresistive effect element includes a multilayer stack formed by alternately stacking, one on top of another, magnetic layers containing NiFeCo as a component and non-magnetic layers containing Cu as a component.
5. The magnetic sensor of claim 4 , wherein
the at least one magnetoresistive effect element includes
an undercoat layer containing NiFeCr as a component and
the multilayer stack laid on top of the undercoat layer.
6. The magnetic sensor of claim 1 , wherein
the at least one bias magnet is configured to apply, to each of a plurality of magnetoresistive effect elements including the pair of first magnetoresistive effect elements and the pair of second magnetoresistive effect elements, a magnetic field having a field strength of less than or equal to one half filed strength of an anisotropic magnetic field of the each of the plurality of magnetoresistive effect elements.
7. The magnetic sensor of claim 1 , further comprising:
a third half-bridge circuit configured to output a third output signal having a reverse phase with respect to the first output signal; and
a fourth half-bridge circuit configured to output a fourth output signal having a reverse phase with respect to the second output signal.
8. A magnetic detection system comprising:
the magnetic sensor of claim 1 ; and
a processing circuit configured to determine, based on at least the first output signal and the second output signal, an orientation of a magnetic field applied to the magnetic sensor.