Power semiconductor element drive adjustment circuit, power module, and power conversion device
A power semiconductor element drive adjustment circuit is provided with a difference unit to calculate a difference value between a normalized value of the differential value of the collector-emitter voltage and a normalized value of the differential value of the collector current, a comparison unit to compare the difference value with a comparison reference value, a drive control unit to generate, on the basis of a comparison result of the comparison unit, a drive adjustment signal that adjusts a drive signal for the power semiconductor element, and a drive variable circuit to output, on the basis of the drive adjustment signal, the drive signal for the power semiconductor element.
1 . A power semiconductor element drive adjustment circuit, comprising:
a voltage detector to detect a collector-emitter voltage of a power semiconductor element;
a current detector to detect a collector current of the power semiconductor element;
a differentiating circuit to differentiate the collector-emitter voltage and differentiate the collector current;
a normalizer to normalize a differential value of the collector-emitter voltage and normalize a differential value of the collector current;
a difference circuit to calculate a difference value between a normalized value of the differential value of the collector-emitter voltage and a normalized value of the differential value of the collector current;
a comparison circuit to compare the difference value with a comparison reference value;
a drive controller to generate, on the basis of a comparison result of the comparison circuit, a drive adjustment signal for adjusting a drive signal for the power semiconductor element; and
a drive variable circuit to output, on the basis of the drive adjustment signal, the drive signal for the power semiconductor element.
2 . The power semiconductor element drive adjustment circuit according to claim 1 , wherein the normalizer includes:
a normalization constant setter to set a first normalization constant and a second normalization constant; and
a normalization circuit to normalize the differential value of the collector-emitter voltage on the basis of the first normalization constant and normalize the differential value of the collector current on the basis of the second normalization constant.
3 . The power semiconductor element drive adjustment circuit according to claim 1 , wherein the difference circuit includes:
a maximum value holder to hold a maximum value of a normalized differential value of the collector-emitter voltage and hold a maximum value of a normalized differential value of the collector current;
a holding period setter to set a holding period in the maximum value holder; and
a differencer to generate a difference value between the maximum value of the normalized differential value of the collector-emitter voltage held in the maximum value holder and the maximum value of the normalized differential value of the collector current held in the maximum value holder.
4 . The power semiconductor element drive adjustment circuit according to claim 1 , wherein the comparison circuit includes:
a comparison reference value setter to set the comparison reference value;
a comparator to compare the difference value with the comparison reference value; and
a comparison period setter to set a period during which a comparison is made in the comparator.
5 . The power semiconductor element drive adjustment circuit according to claim 1 , wherein the drive controller includes:
a drive adjuster to generate a drive adjustment signal for adjusting the drive signal for the power semiconductor element in accordance with the comparison result of the comparison circuit; and
a drive adjustment signal holder to hold and output the drive adjustment signal generated by the drive adjuster in accordance with the comparison result of the comparison circuit.
6 . The power semiconductor element drive adjustment circuit according to claim 1 , wherein the drive controller:
includes a drive adjustment setter to set a change amount to be adjusted from a change amount per unit time of the collector-emitter voltage of the power semiconductor element and a change amount per unit time of the collector current of the power semiconductor element; and
outputs, on the basis of the setting of the drive adjustment setter, the adjusted drive adjustment signal in accordance with the comparison result of the comparison circuit.
7 . The power semiconductor element drive adjustment circuit according to claim 1 , further comprising a loss calculator to calculate a loss of the power semiconductor element, wherein:
the normalizer further normalizes the loss of the power semiconductor element; and
the difference circuit calculates a difference value between any two from among the normalized differential value of the collector-emitter voltage, the normalized differential value of the collector current, and a normalized loss of the power semiconductor element.
8 . The power semiconductor element drive adjustment circuit according to claim 1 , further comprising a surge detector that is connected to the voltage detector and the current detector so as to detect a surge voltage of the power semiconductor element and a surge current of the power semiconductor element, wherein:
the normalizer normalizes the surge voltage of the power semiconductor element and normalizes the surge current of the power semiconductor element; and
the difference circuit calculates a difference value between any two from among the normalized differential value of the collector-emitter voltage, the normalized differential value of the collector current, the normalized loss of the power semiconductor element, a normalized surge voltage of the power semiconductor element, and a normalized surge current of the power semiconductor element.
9 . The power semiconductor element drive adjustment circuit according to claim 1 , wherein:
the drive adjuster of the drive controller includes:
a selector to select a driving signal to be adjusted from a driving signal in a turn-on operation of the power semiconductor element and a drive signal in a turn-off operation of the power semiconductor element;
a turn-on drive adjuster to adjust the drive signal for the turn-on operation of the power semiconductor element when adjusting the drive signal in the turn-on operation of the power semiconductor element is selected by the selector; and
a turn-off drive adjuster to adjust the drive signal for the turn-off operation of the power semiconductor element when adjusting the drive signal in the turn-off operation of the power semiconductor element is selected by the selector, and
the drive adjustment signal holder of the drive controller includes:
a turn-on holder to hold and output a drive adjustment signal adjusted by the turn-on drive adjuster in accordance with the comparison result of the comparison circuit; and
a turn-off holder to hold and output a drive adjustment signal adjusted by the turn-off drive adjuster in accordance with the comparison result of the comparison circuit.
10 . A power module comprising a power semiconductor element, and the power semiconductor element drive adjustment circuit according to claim 1 .
11 . A power conversion device, comprising:
a main conversion circuit that includes a power semiconductor element and the power semiconductor element drive adjustment circuit according to claim 1 , to convert and output inputted power; and
a control circuit to output, to the main conversion circuit, a control signal for controlling the main conversion circuit.