SEMICONDUCTOR MODULE
Provided is a semiconductor module comprising a semiconductor chip, a wire formed on an insulating substrate, and a lead frame, the semiconductor module having a higher heat-dissipating effect than before. A semiconductor module 10 of the present invention comprises an insulating substrate 1 , a wire 2 formed on the insulating substrate 1 , a semiconductor chip 3 , and a lead frame 4 , and is characterized in that the semiconductor chip 3 has one surface connected to the wire 2 and another surface connected to the lead frame 4 , the wire 2 has a floating wire to which the lead frame 4 is connected, and a connection point between the floating wire and the lead frame 4 is located at a corner of the insulating substrate 1.
1 . A semiconductor module comprising:
an insulating substrate;
a wiring formed on the insulating substrate;
a semiconductor chip; and
a lead frame,
wherein the semiconductor chip has one surface connected to the wiring and another surface connected to the lead frame,
the wiring includes a floating wiring to which the lead frame is connected, and
a connection point between the floating wiring and the lead frame is located at a corner part of the insulating substrate.
2 . The semiconductor module according to claim 1 , wherein the connection point between the floating wiring and the lead frame is located on a further outer peripheral side of the insulating substrate than another connection point between the lead frame and the wiring.
3 . The semiconductor module according to claim 1 ,
wherein the insulating substrate is formed of ceramics, and
the lead frame is formed of copper.
4 . The semiconductor module according to claim 3 , wherein the lead frame has a thickness equal to or more than 1.0 mm and equal to or less than 1.2 mm.
5 . The semiconductor module according to claim 1 , further comprising a heat dissipation member on a surface on a side of the insulating substrate opposite to the semiconductor chip,
wherein the heat dissipation member is disposed to overlap the floating wiring with the insulating substrate interposed between the heat dissipation member and the floating wiring.
6 . The semiconductor module according to claim 5 ,
wherein the heat dissipation member includes a heat dissipation fin, and
the heat dissipation fin is disposed to overlap the floating wiring with the insulating substrate interposed between the heat dissipation fin and the floating wiring.