POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
A polishing liquid for polishing a member to be polished, the polishing liquid containing abrasive grains containing cerium oxide, in which the member to be polished contains a resin and particles containing a silicon compound. A polishing method including polishing a member to be polished containing a resin and particles containing a silicon compound by using the polishing liquid. A method for manufacturing a component, including obtaining a component by using a polished member polished by the polishing method. A method for manufacturing a semiconductor component, including obtaining a semiconductor component by using a polished member polished by the above-described polishing method.
1 . A polishing method comprising polishing a member to be polished by using a polishing liquid, wherein
the polishing liquid comprises abrasive grains containing cerium oxide, and
the member to be polished contains a resin and particles containing a silicon compound.
2 . The polishing method according to claim 1 , wherein the particles contain silicon oxide.
3 . The polishing method according to claim 1 , wherein the polishing liquid further comprises an ether compound having a hydroxy group.
4 . The polishing method according to claim 3 , wherein the ether compound includes an alkoxy alcohol.
5 . The polishing method according to claim 4 , wherein the ether compound includes an alkoxy alcohol having a molecular weight of less than 200.
6 . The polishing method according to claim 4 , wherein the alkoxy alcohol includes a compound having an alkoxy group having 1 to 5 carbon atoms.
7 . The polishing method according to claim 4 , wherein the alkoxy alcohol includes 1-propoxy-2-propanol.
8 . The polishing method according to claim 4 , wherein the alkoxy alcohol includes 3-methoxy-3-methyl-1-butanol.
9 . The polishing method according to claim 4 , wherein a content of the alkoxy alcohol is 0.2 to 0.8% by mass on the basis of the total mass of the polishing liquid.
10 . The polishing method according to claim 4 , wherein the ether compound further includes a polyether.
11 . The polishing method according to claim 10 , wherein the polyether includes polyglycerol.
12 . The polishing method according to claim 10 , wherein a content of the polyether is 0.5 to 3% by mass on the basis of the total mass of the polishing liquid.
13 . The polishing method according to claim 1 , wherein a content of the abrasive grains is 0.5 to 2% by mass on the basis of the total mass of the polishing liquid.
14 . The polishing method according to claim 1 , wherein the polishing liquid further comprises comprising an organic acid component.
15 . The polishing method according to claim 1 , wherein the polishing liquid further comprises at least one selected from the group consisting of an ammonium cation and ammonia.
16 . The polishing method according to claim 1 , wherein a pH of the polishing liquid is 9.00 to 11.00.
17 . (canceled)
18 . The polishing method according to claim 1 , wherein the resin includes an epoxy resin.
19 . A method for manufacturing a component, comprising obtaining a component by using a polished member polished by the polishing method according to claim 1 .
20 . A method for manufacturing a semiconductor component, comprising obtaining a semiconductor component by using a polished member polished by the polishing method according to claim 1 .