Circuit board
A circuit board according to an embodiment includes an insulating layer, a first circuit pattern layer disposed on the insulating layer; a second circuit pattern layer disposed below the insulating layer; and a via passing through the insulating layer and connecting the first circuit pattern layer and the second circuit pattern layer, wherein the via has a first width at an upper surface and a second width less than the first width at a first region between the upper surface and a lower surface, wherein the first region is a region with a minimum width among all regions of the via, and wherein the second width satisfies a range of 70% to 99% of the first width.
1 . A circuit board comprising:
an insulating layer;
a via electrode provided to pass through the insulating layer;
a first circuit pattern layer disposed on an upper surface of the insulating layer; and
a second circuit pattern layer disposed on a lower surface of the insulating layer,
wherein the via electrode includes an upper surface, a lower surface, and a first region between the upper surface and the lower surface,
wherein the upper surface of the via electrode has a first width along a horizontal direction,
wherein the first region has a second width that is smaller than the first width along the horizontal direction,
wherein the first region is a region in the via electrode with a smallest width in the horizontal direction,
wherein the second width satisfies a range of 70% to 99% of the first width,
wherein the first circuit pattern layer includes an upper via pad connected to the via electrode,
wherein the upper via pad includes a copper foil layer disposed on the insulating layer, a first plating layer disposed on the copper foil layer, and a second plating layer disposed on the first plating layer,
wherein the upper via pad has a third width along the horizontal direction, and
wherein one-half of a difference between the third width and the first width of the via satisfies a range of 0.75 μm to 2.97 μm.
2 . The circuit board of claim 1 , wherein the first plating layer is a chemical copper plating layer, and the second plating layer is an electrolytic plating layer.
3 . The circuit board of claim 1 , wherein the first width is one of a maximum width and an average width in the horizontal direction along a circumferential direction of the upper surface of the via electrode.
4 . The circuit board of claim 1 , wherein one-half of a difference between the first width and the second width of the via electrode satisfies a range of 0.1% to 20% of the first width.
5 . The circuit board of claim 1 , wherein the upper via pad has a third width along the horizontal direction, and
wherein one-half of a difference between the third width and the second width is 4.0 μm or less.
6 . The circuit board of claim 1 , wherein the first plating layer is spaced apart from the upper surface of the insulating layer.
7 . The circuit board of claim 1 , wherein a side surface of the copper foil layer of the upper via pad has a first slope along a vertical direction, and
wherein the via electrode has a second slope different from the first slope along the vertical direction.
8 . The circuit board of claim 7 , wherein the first slope is closer to 90° than the second slope.
9 . The circuit board of claim 7 , wherein the first slope is directly connected to an upper end of the second slope.
10 . The circuit board of claim 1 , wherein the insulating layer includes one of RCC (Resin coated copper) or prepreg.
11 . A semiconductor package comprising:
an insulating layer;
a circuit pattern layer disposed on the insulating layer;
a via electrode passing through the insulating layer and connected to the circuit pattern layer; and
a semiconductor device disposed on the circuit pattern layer,
wherein the via electrode includes an upper surface, a lower surface, and a first region between the upper surface and the lower surface,
wherein the upper surface of the via electrode has a first width along a horizontal direction,
wherein the first region has a second width that is smaller than the first width along the horizontal direction,
wherein the first region is a region in the via electrode with a smallest width in the horizontal direction,
wherein the second width satisfies a range of 70% to 99% of the first width,
wherein the circuit pattern layer includes a via pad connected to the via electrode,
wherein the via pad includes a copper foil layer disposed on the insulating layer, a first plating layer disposed on the copper foil layer, and a second plating layer disposed on the first plating layer,
wherein the via pad has a third width along the horizontal direction, and
wherein one-half of a difference between the third width and the first width of the via satisfies a range of 0.75 μm to 2.97 μm.
12 . The semiconductor package of claim 11 , wherein the first plating layer is a chemical copper plating layer, and the second plating layer is an electrolytic plating layer.
13 . The semiconductor package of claim 11 , wherein one-half of a difference between the first width and the second width of the via electrode satisfies a range of 0.1% to 20% of the first width.
14 . The semiconductor package of claim 11 , wherein the first plating layer is spaced apart from the upper surface of the insulating layer.
15 . The semiconductor package of claim 11 , wherein a side surface of the copper foil layer of the upper via pad has a first slope along a vertical direction,
wherein the via electrode has a second slope different from the first slope along the vertical direction,
wherein the first slope is closer to 90° than the second slope, and
wherein the first slope is directly connected to an upper end of the second slope.