Semiconductor device
An object is to provide a technique capable of suppressing heat occurring in a second semiconductor switching element. A semiconductor device includes a parallel circuit in which a first semiconductor switching element and a second semiconductor switching element are parallelly connected and a gate drive circuit. When a state continuing time which is a time during which the state of the input signal continues is equal to or larger than a threshold value, the gate drive circuit turns off the second semiconductor switching element while keeping ON of the first semiconductor switching element, or reduces a power conduction capability of the second semiconductor switching element while keeping ON of the first semiconductor switching element.
1. A semiconductor device, comprising:
a parallel circuit in which a first semiconductor switching element and a second semiconductor switching element having a larger bandgap than the first semiconductor switching element are parallelly connected; and
a gate drive circuit capable of changing a time of continuing a state of ON of the first semiconductor switching element and the second semiconductor switching element based on the state of ON or OFF of an input signal, wherein
when a state continuing time which is a time during which the state of the input signal continues is equal to or larger than a threshold value, the gate drive circuit turns off the second semiconductor switching element while keeping ON of the first semiconductor switching element, or reduces a power conduction capability of the second semiconductor switching element while keeping ON of the first semiconductor switching element.
2. The semiconductor device according to claim 1 , wherein
the gate drive circuit turns on the second semiconductor switching element after turning on the first semiconductor switching element, and turns off the first semiconductor switching element after turning off the second semiconductor switching element.
3. The semiconductor device according to claim 1 , wherein
when the state continuing time is equal to or larger than the threshold value, the gate drive circuit repeats ON and OFF of the second semiconductor switching element while keeping ON of the first semiconductor switching element.
4. The semiconductor device according to claim 1 , wherein
when the state continuing time is equal to or larger than the threshold value, the gate drive circuit keeps OFF of the second semiconductor switching element or reduces the power conduction capability of the second semiconductor switching element on the state, which subsequently occurs, of the input signal.
5. The semiconductor device according to claim 1 , wherein
the first semiconductor switching element is an IGBT made of silicon, and
the second semiconductor switching element is a MOSFET made of silicon carbide.
6. The semiconductor device according to claim 2 , wherein
when the state continuing time is equal to or larger than the threshold value, the gate drive circuit repeats ON and OFF of the second semiconductor switching element while keeping ON of the first semiconductor switching element.
7. The semiconductor device according to claim 2 , wherein
when the state continuing time is equal to or larger than the threshold value, the gate drive circuit keeps OFF of the second semiconductor switching element or reduces the power conduction capability of the second semiconductor switching element on the state, which subsequently occurs, of the input signal.
8. The semiconductor device according to claim 2 , wherein
the first semiconductor switching element is an IGBT made of silicon, and
the second semiconductor switching element is a MOSFET made of silicon carbide.