Controlling an output transistor of a switching power supply
A switching power supply includes a switching output stage configured to generate an output voltage by rectifying and smoothing a switching voltage that is pulse-driven as an output transistor is turned on and off. An oscillation circuit is configured to generate an on signal that alternates between an on period and an off period at a predetermined switching frequency, and a logic circuit is configured to set the on period of the on signal as a maximum on period of the output transistor. The oscillation circuit is configured to skip the off period of the on signal when, despite the output transistor being kept on for the maximum on period, the output voltage drops below a target value.
1. A semiconductor device configured to control an output transistor of a switching power supply, the switching power supply configured to generate an output voltage by rectifying and smoothing a switching voltage that is pulse-driven as the output transistor is turned on and off,
wherein the semiconductor device comprises:
an oscillation circuit configured to generate an on-signal that alternates between an on-period and an off-period at a predetermined switching frequency;
a logic circuit configured to set the on-period of the on-signal as a maximum on-period of the output transistor;
an error amplifier circuit configured to receive a feedback voltage commensurate with the output voltage to generate an error voltage;
a slope voltage generation circuit configured to generate a slope voltage in synchronization with the on-signal;
a comparison circuit configured to compare the error voltage with the slope voltage to generate an off-signal; and
a driver circuit configured to generate a switching driving signal in accordance with an on/off control signal from the logic circuit,
wherein
the oscillation circuit is configured to skip the off-period of the on-signal when, despite the output transistor being kept on for the maximum on-period, the output voltage drops below a target value, and
the logic circuit is configured to generate the on/off control signal in accordance with the on-signal and the off-signal.
2. The semiconductor device according to claim 1 , wherein
the oscillation circuit is configured to skip the off-period of the on-signal
when the feedback voltage is lower than a predetermined value,
when the error voltage is higher than a predetermined value, or
when a logic level of the off-signal remains unchanged for a predetermined time after the output transistor is turned on.
3. The semiconductor device according to claim 1 , wherein
the slope voltage generation circuit is configured to adjust a gradient of the slope voltage when the off-period of the on-signal is skipped.
4. The semiconductor device according to claim 1 , further comprising:
a bootstrap circuit configured to generate a boosted voltage by adding up the switching voltage and a terminal-to-terminal voltage across a boot capacitor to feed the boosted voltage to the driver circuit.
5. The semiconductor device according to claim 4 , further comprising:
a discharge circuit configured to discharge the switching voltage every off-period of the on-signal.
6. The semiconductor device according to claim 4 , further comprising:
a fault sense circuit configured to sense a drop in the terminal-to-terminal voltage to generate a fault signal.
7. The semiconductor device according to claim 6 , wherein
the fault sense circuit is configured to generate the fault signal by sensing, after the on/off control signal turning to a logic level corresponding to an on-state, the switching driving signal not turning to a logic level corresponding to the on-state.
8. The semiconductor device according to claim 6 , further comprising:
a discharge circuit configured to discharge the switching voltage in accordance with the fault signal.
9. The semiconductor device according to claim 8 , further comprising:
a selector configured to switch a reference voltage for the bootstrap circuit to a higher voltage when the switching voltage is discharged.
10. A switching power supply comprising:
the semiconductor device according to claim 1 ; and
the output transistor, wherein the output transistor is integrated into or externally connected to the semiconductor device.