Hydrogen peroxide plasma surface modification
The techniques described herein relate to hydrogen peroxide plasma surface modification. In some embodiments, a method includes providing a mixture including hydrogen peroxide vapor from a source, wherein a concentration of the hydrogen peroxide vapor in the mixture is substantially stable over time. The method further includes forming a hydrogen peroxide plasma from the mixture and exposing a material to the hydrogen peroxide plasma in a chamber.
1 . A method comprising:
providing a mixture comprising hydrogen peroxide vapor from a source, wherein a concentration of the hydrogen peroxide vapor in the mixture is substantially stable over time;
forming a hydrogen peroxide plasma from the mixture; and
exposing a material to the hydrogen peroxide plasma in a chamber,
wherein the material is a semiconductor substrate comprising silicon.
2 . The method of claim 1 , wherein the exposing the material to the hydrogen peroxide plasma in the chamber increases a hydrophilicity of a surface of the material.
3 . The method of claim 1 , wherein the material is a substrate, or a layered structure comprising a thin film.
4 . The method of claim 1 , wherein the method further comprises dipping the semiconductor substrate in a buffered HF solution before the exposing the substrate to the hydrogen peroxide plasma.
5 . The method of claim 1 , wherein a surface of the material does not substantially form SiO2 from the exposing the material to the hydrogen peroxide plasma.
6 . The method of claim 1 , wherein a subsurface of the material is not substantially oxidized by the exposing the material to the hydrogen peroxide plasma.
7 . The method of claim 1 , wherein a roughness of the material is not substantially increased by the exposing the material to the hydrogen peroxide plasma.
8 . The method of claim 1 , wherein the mixture comprises less than 60% water by weight at the source.
9 . The method of claim 1 , wherein the mixture comprises less than 10% water by weight at the source.
10 . The method of claim 1 , wherein the mixture comprises less than 0.1% water by weight at the source.
11 . The method of claim 1 , wherein the mixture comprises less than 1% oxygen by weight at the source.
12 . The method of claim 1 , wherein the mixture further comprises a carrier gas, and wherein the carrier gas comprises one or more of an inert gas, hydrogen, or nitrogen.
13 . The method of claim 1 , wherein the providing the mixture comprising the hydrogen peroxide vapor from the source further comprises directly drawing the mixture from the source using a vacuum.
14 . The method of claim 1 , further comprising introducing the material into the chamber before the exposing the material to the hydrogen peroxide plasma in the chamber.
15 . The method of claim 1 , wherein the exposing the material to the hydrogen peroxide plasma in the chamber causes a surface of the material to have a static water contact angle less than about 15 degrees.
16 . The method of claim 1 , wherein exposed surfaces of the material comprise a rough surface, pits, or holes, and wherein exposing the material to the hydrogen peroxide plasma in the chamber causes the exposed surfaces of the material to become more hydrophilic.
17 . The method of claim 1 , wherein the material is exposed to the hydrogen peroxide plasma for about 5 minutes, and wherein a pressure in the chamber is about 5 Torr during the exposing.
18 . The method of claim 1 , further comprising forming an inert gas plasma before forming the hydrogen peroxide plasma, wherein the forming the hydrogen peroxide plasma from the mixture comprises adding the mixture to the inert gas plasma.