Magneto-electrostatic sensing, focusing, and steering of electron beams in vacuum electron devices
Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.
1 . A vacuum electron device for a radio-frequency (RF) amplifier or oscillator, comprising:
a first non-magnetic conductor plate;
a second non-magnetic conductor plate;
a plurality of non-magnetic interaction structure forming plates disposed between the first non-magnetic conductor plate and the second non-magnetic conductor plate, the plurality of non-magnetic interaction structure forming plates together forming an RF interaction structure housing an electron beam tunnel region, the first non-magnetic conductor plate, the second non-magnetic conductor plate and the plurality of non-magnetic interaction structure forming plates being bonded together;
permanent magnets arranged about the electron beam tunnel region to apply RF interaction to confine an electron beam within the electron beam tunnel region; and
at least one control plate electrically insulated from the RF interaction structure, the at least one control plate coupled to at least one electrically insulated conductor arranged to pass through and be electrically insulated from the RF interaction structure, the at least one electrically insulated conductor configured to apply a corrective steering or focusing force on the electron beam within the electron beam tunnel region.
2 . The vacuum electron device of claim 1 , wherein the at least one control plate is configured to deliver an electrical bias signal provided on at least one electrically insulated conductor disposed on the control plate.
3 . The vacuum electron device of claim 1 , wherein the at least one control plate is configured to deliver at least two separate electrical bias signals provided on at least two separate electrically insulated conductors disposed on the control plate.
4 . The vacuum electron device of claim 1 , wherein the at least one control plate is configured to deliver at least four separate electrical bias signals provided on at least four separate electrically insulated conductors disposed on the control plate.
5 . The vacuum electron device of claim 1 , wherein the at least one electrically insulated conductor is further configured to sense electron current density.
6 . A vacuum electron device (VED) for a radio-frequency (RF) amplifier or oscillator, comprising:
a plurality of electrically conductive sections of interaction structure housing an electron beam tunnel, the electron beam tunnel having a longitudinal axis parallel to the interaction structure, the electron beam tunnel being surrounded by at least one magnet arranged to apply RF interaction to confine an electron beam within the electron beam tunnel;
the plurality of electrically conductive sections being separated by a first pair of electrical insulators at a first position along the electron beam tunnel and by a second pair of electrical insulators at a second position along the electron beam tunnel, each of the first pair of electrical insulators and the second pair of electrical insulators sandwiching at least one electrostatic lens element disposed orthogonally to the longitudinal axis; and
each electrostatic lens element being provided with at least one electrically conductive path to an exterior of the interaction structure, the electrically conductive path being electrically insulated from the interaction structure so that a voltage applied to the electrically conductive path will be conducted to the electrostatic lens element to apply a corrective steering or focusing force on the electron beam within the electron beam tunnel.
7 . The vacuum electron device of claim 6 , wherein the at least one electrostatic lens element is configured to deliver an electrical bias signal provided on at least one electrically insulated conductor disposed on the electrostatic lens element.
8 . The vacuum electron device of claim 6 , wherein the at least one electrostatic lens element is configured to deliver at least two separate electrical bias signals provided on at least two separate electrically insulated conductors disposed on the electrostatic lens element.
9 . The vacuum electron device of claim 6 , wherein the at least one electrostatic lens element is configured to deliver at least four separate electrical bias signals provided on at least four separate electrically insulated conductors disposed on the electrostatic lens element.
10 . The vacuum electron device of claim 6 , wherein at least one electrically conductive path is configured to sense electron current density.
11 . A method for fabricating a vacuum electron device for a radio-frequency (RF) amplifier or oscillator, the method comprising:
forming a first non-magnetic conductor plate from a non-magnetic electrically conductive material;
forming a second non-magnetic conductor plate from a non-magnetic electrically conductive material;
forming an interaction structure from a plurality of electrically conductive non-magnetic interaction structure forming plates arranged with one another so that the interaction structure contains an electron beam tunnel region, the interaction structure containing at least one electrostatic lens element having at least one electrically conductive path to an exterior of the interaction structure, the electrically conductive path electrically insulated from the interaction structure so that a voltage applied to the electrically conductive path will be conducted to the electrostatic lens element;
disposing the first non-magnetic conductor plate, the interaction structure, and the second non-magnetic conductor plate in a stack such that the first non-magnetic conductor plate and the second non-magnetic conductor plate are on the outside of the stack;
bonding the first non-magnetic conductor plate, the interaction structure, and the second non-magnetic conductor plate together; and
surrounding the electron beam tunnel region with at least one magnet arranged to confine an electron beam within the electron beam tunnel region.
12 . The method of claim 11 , further comprising:
forming the at least one electrostatic lens element so that it is configured to deliver an electrical bias signal provided on at least one electrically insulated conductor disposed on the electrostatic lens element, the at least one electrically insulated conductor configured to apply a corrective steering or focusing force on the electron beam within the electron beam tunnel region.
13 . The method of claim 11 , forming comprising:
forming the at least one electrostatic lens element so that it is configured to deliver at least two separate electrical bias signals provided on at least two separate electrically insulated conductors disposed on the electrostatic lens element, each electrically insulated conductor configured to apply a corrective steering or focusing force on the electron beam within the electron beam tunnel region.
14 . The method of claim 11 , further comprising:
forming the at least one electrostatic lens element so that it is configured to deliver at least four separate electrical bias signals provided on at least four separate electrically insulated conductors disposed on the electrostatic lens element, each electrically insulated conductor configured to apply a corrective steering or focusing force on the electron beam within the electron beam tunnel region.