Formation of Inductor Core Stacks Using Self-Assembled Monolayers
A method for forming a multi-layer inductor core incorporates a leaky self-assembled monolayer (SAM) as a plateable dielectric layer that is interposed between magnetic layers formed by electrochemical deposition (ECD) plating processes. A method may include depositing a dielectric layer on a first magnetic layer of an inductor core stack where the dielectric layer is a SAM layer and depositing a second magnetic layer on the dielectric layer of the multi-layer inductor core. The method may be repeated to form as many layers as desired. Subsequent dielectric layers may be the same SAM layer or a different SAM layer. A mix of different molecules may be used in the SAM layers to form the dielectric layers.
1 . A method for forming a multi-layer inductor core, comprising:
depositing a first dielectric layer on a first magnetic layer of the multi-layer inductor core, wherein the first dielectric layer is a first self-assembled monolayer (SAM) layer; and
depositing a second magnetic layer of the multi-layer inductor core on the first dielectric layer.
2 . The method of claim 1 , wherein the second magnetic layer is deposited on the first dielectric layer using an electrochemical deposition (ECD) process.
3 . The method of claim 1 , wherein an in situ magnetic alignment process is performed on the multi-layer inductor core.
4 . The method of claim 1 , wherein the depositing of the first magnetic layer and the first dielectric layer occurs in a single chamber.
5 . The method of claim 1 , wherein the first SAM layer is deposited using a spray process, an aerosol process, or a dip process.
6 . The method of claim 1 , wherein an annealing process is performed in situ at a temperature of approximately 100 degrees Celsius to approximately 200 degrees Celsius after depositing of the first dielectric layer.
7 . The method of claim 1 , wherein the first SAM layer is deposited using a vapor phase deposition process, a liquid phase deposition process, or a microcontact printing process.
8 . The method of claim 1 , wherein the first SAM layer has a head group attached to the first magnetic layer, a tail group distal to the first magnetic layer, and a carbon chain backbone with a length of C3 to C22.
9 . The method of claim 1 , wherein the first SAM layer is a continuous and porous layer over the first magnetic layer that permits electron travel from the first magnetic layer through the first SAM layer.
10 . The method of claim 1 , wherein the first SAM layer is formed with a tail group that attracts metal to form a metal seed layer.
11 . The method of claim 1 , wherein the first SAM layer has mixed molecules.
12 . The method of claim 1 , wherein the method is performed at a temperature of less than approximately 400 degrees Celsius.
13 . The method of claim 1 , wherein the first SAM layer has a dielectric constant of approximately 2.0 to approximately 3.0 and a thickness of less than 5 nm.
14 . The method of claim 1 , further comprising:
depositing a second dielectric layer on the second magnetic layer, wherein the second dielectric layer is a second SAM layer; and
depositing a third magnetic layer on the second dielectric layer.
15 . An inductor core, comprising:
a first magnetic layer of an inductor core stack of the inductor core;
a dielectric layer of the inductor core stack formed directly on the first magnetic layer, wherein the dielectric layer is a self-assembled monolayer (SAM) layer; and
a second magnetic layer of the inductor core stack formed directly on the dielectric layer.
16 . The inductor core of claim 15 , wherein the SAM layer has a head group attached to the first magnetic layer, a tail group distal to the first magnetic layer that is attached to the second magnetic layer, and a carbon chain backbone with a length of C3 to C22.
17 . The inductor core of claim 15 , wherein the SAM layer has a dielectric constant of approximately 2.0 to approximately 3.0 and a thickness of less than 5 nm.
18 . The inductor core of claim 15 , wherein the SAM layer has mixed molecules.
19 . The inductor core of claim 15 , further comprising:
a second dielectric layer of the inductor core stack formed directly on the second magnetic layer, wherein the second dielectric layer is a second SAM layer; and
a third magnetic layer of the inductor core stack formed directly on the second dielectric layer.
20 . A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for forming a multi-layer inductor core to be performed, the method comprising:
depositing a dielectric layer on a first magnetic layer of the multi-layer inductor core, wherein the dielectric layer is a self-assembled monolayer (SAM) layer; and
depositing a second magnetic layer on the dielectric layer to form the multi-layer inductor core.