Solvent compatible nozzle plate
A composite photoresist material and method of making the composite photoresist material. The composite photoresist material includes: a photoresist layer devoid of a phenoxy resin, and a photoresist layer containing a phenoxy resin.
1 . A method for making a fluid ejection head, comprising the steps of:
(A) applying a layer of photoresist material to a carrier film, the layer of photoresist material comprising a phenoxy resin;
(B) drying the layer to provide a dried layer;
(C) applying a layer of photoresist material devoid of a phenoxy resin to the dried layer;
(D) drying the layer devoid of the phenoxy resin to provide a composite photoresist laminate nozzle plate; and
(E) laminating the composite photoresist laminate nozzle plate to a flow feature layer to provide the fluid ejection head, wherein the photoresist layer devoid of a phenoxy resin is configured to be adjacent to the flow feature layer of the fluid ejection head.
2 . The method of claim 1 , further comprising
(F) imaging and developing nozzle holes in the composite photoresist laminate nozzle plate.
3 . The method of claim 1 , wherein the layer of photoresist material applied to the carrier film comprises a first layer of photoresist material containing a phenoxy resin and a hydrophobicity agent and a second layer of photoresist material containing a phenoxy resin, wherein the second layer of photoresist material is devoid of a hydrophobicity agent.
4 . The method of claim 3 , wherein the hydrophobicity agent is selected from the group consisting of heptadecafluorodecyltrimethoxysilane, octadecyldimethylchlorosilane, octadecyltrichlorosilane, methyltrimethoxysilane, octyltriethoxysilane, phenyltrimethoxysilane, t-butylmethoxysilane, tetraethoxysilane, sodium methyl siliconate, vinyltrimethoxysilane, N-(3-(trimethoxysilyl)propyl)ethylenediamine, polymethylmethoxysiloxane, polydimethylsiloxane, polyethylhydrogensiloxane, and dimethyl siloxane.
5 . The method of claim 1 , wherein the composite photoresist nozzle plate is devoid of a hydrophobicity agent.
6 . The method of claim 1 , wherein the photoresist layer devoid of a phenoxy resin is also devoid of a hydrophobicity agent.
7 . The method of claim 1 , wherein the photoresist layer devoid of a phenoxy resin has a thickness ranging from about 3 to about 10 microns.
8 . The method of claim 1 , wherein the photoresist layer containing a phenoxy resin has a thickness ranging from about 3 to about 20 microns.
9 . The method of claim 1 , further comprising applying a third photoresist layer adjacent to the photoresist layer containing the phenoxy resin, wherein the third photoresist layer contains a phenoxy resin and a hydrophobicity agent.
10 . The composite photoresist material method of claim 9 , wherein the third photoresist layer has a thickness ranging from about 3 to about 20 microns.
11 . A method for making a fluid ejection head, comprising:
(A) applying a layer of photoresist material to a carrier film, the layer of photoresist material comprising a phenoxy resin;
(B) drying the layer to provide a dried layer;
(C) applying a layer of photoresist material devoid of a phenoxy resin to the dried layer;
(D) drying the layer devoid of the phenoxy resin to provide a composite photoresist laminate nozzle plate;
(E) removing the composite photoresist laminate nozzle plate from the carrier film;
(F) laminating the composite photoresist laminate nozzle plate to a flow feature layer attached to a semiconductor substrate, wherein the photoresist layer devoid of a phenoxy resin is configured to be adjacent to the flow feature layer of the fluid ejection head; and
(G) imaging and developing nozzle holes in the composite photoresist laminate nozzle plate to provide the fluid ejection head.
12 . The method of claim 11 , wherein the composite photoresist nozzle plate is devoid of a hydrophobicity agent.
13 . The method of claim 11 , wherein the photoresist layer devoid of a phenoxy resin is also devoid of a hydrophobicity agent.
14 . The method of claim 11 , wherein the photoresist layer devoid of a phenoxy resin has a thickness ranging from about 3 to about 10 microns.
15 . The method of claim 11 , wherein the photoresist layer containing a phenoxy resin has a thickness ranging from about 3 to about 20 microns.
16 . The method of claim 11 , further comprising applying a third photoresist layer adjacent to the photoresist layer containing the phenoxy resin, wherein the third photoresist layer contains a phenoxy resin and a hydrophobicity agent.
17 . The composite photoresist material method of claim 16 , wherein the third photoresist layer has a thickness ranging from about 3 to about 20 microns.