Semiconductor memory device
A semiconductor memory device includes a first conductive film, a semiconductor layer on the first conductive film, a stacked body having a plurality of conductive layers insulated from each other and stacked above the semiconductor layer in a stacking direction, a semiconductor film extending through the stacked body and the first conductive film in the stacking direction, an insulating film extending in the stacking direction between the plurality of conductive layers in the stacked body and the semiconductor film, and a second conductive film containing carbon, that is in direct contact with the first conductive film and with one end or a side surface of the semiconductor film.
1 . A semiconductor memory device comprising:
a first conductive film;
a semiconductor layer on the first conductive film;
a stacked body having a plurality of conductive layers insulated from each other and stacked above the semiconductor layer in a stacking direction;
a semiconductor film extending through the stacked body and the first conductive film in the stacking direction;
an insulating film extending in the stacking direction between the plurality of conductive layers in the stacked body and the semiconductor film; and
a second conductive film containing carbon, that is in direct contact with the first conductive film and with one end or a side surface of the semiconductor film.
2 . The semiconductor memory device according to claim 1 ,
wherein the second conductive film is in direct contact with the one end of the semiconductor film.
3 . The semiconductor memory device according to claim 2 , wherein the second conductive film includes
a first surface that is in direct contact with the one end of the semiconductor film, and
a second surface that is on a side opposite to the first surface and in direct contact with the first conductive film.
4 . The semiconductor memory device according to claim 1 ,
wherein the second conductive film is in direct contact with the side surface of the semiconductor film.
5 . The semiconductor memory device according to claim 4 , wherein the second conductive film includes
a first side surface that is in direct contact with the side surface of the semiconductor film, and
a second side surface that is on a side opposite to the first side surface and in direct contact with an end portion of the first conductive film.
6 . The semiconductor memory device according to claim 4 , wherein the second conductive film includes
a first side surface that is in direct contact with the side surface of the semiconductor film,
a first main surface that is in direct contact with one end of the insulating film, and
a second main surface that is on a side opposite to the first main surface and in direct contact with an end portion of the first conductive film.
7 . The semiconductor memory device according to claim 6 , wherein the first conductive film is in direct contact with the one end of the semiconductor film.
8 . The semiconductor memory device according to claim 1 , wherein
the first conductive film contains a polycrystalline semiconductor containing an impurity, and the second conductive film contains a polycrystalline semiconductor containing an impurity and carbon, and
an average grain size of the polycrystalline semiconductor in the second conductive film is smaller than an average grain size of the polycrystalline semiconductor in the first conductive film.
9 . The semiconductor memory device according to claim 8 , wherein the polycrystalline semiconductor is polysilicon.
10 . A semiconductor memory device comprising:
a first conductive film;
a semiconductor layer on the first conductive film;
a plurality of conductive layers insulated from each other and stacked above the semiconductor layer in a stacking direction;
a memory pillar extending through the conductive layers and the first conductive film in the stacking direction, wherein the memory pillar includes an insulating core extending in the stacking direction, a semiconductor film surrounding the insulating core and extending in the stacking direction, and an insulating film surrounding the semiconductor film and extending in the stacking direction; and
a second conductive film containing carbon, that is in direct contact with the first conductive film and the semiconductor film.
11 . The semiconductor memory device according to claim 10 , wherein the second conductive film has a first portion that is on an upper side of the first conductive film and in direct contact with the semiconductor film and a second portion that is on a lower side of the first conductive film and in direct contact with the semiconductor film.
12 . The semiconductor memory device according to claim 11 , wherein the first and second portions of the second conductive film are in direct contact with a side surface of the semiconductor film.
13 . The semiconductor memory device according to claim 11 , wherein the semiconductor film has a first portion with which the first portion of the second conductive film is in direct contact, and a second portion with which the second portion of the second conductive film is in direct contact.
14 . The semiconductor memory device according to claim 13 , wherein the first portion of the second conductive film is in direct contact with a side surface of the first portion of the semiconductor film, and the second portion of the second conductive film is in direct contact with a side surface of the second portion of the semiconductor film.
15 . The semiconductor memory device according to claim 13 , wherein the first portion of the second conductive film is in direct contact with a lower surface of the first portion of the semiconductor film, and the second portion of the second conductive film is in direct contact with an upper surface of the second portion of the semiconductor film.
16 . The semiconductor memory device according to claim 15 , wherein the first conductive film is in direct contact with the insulating core.
17 . The semiconductor memory device according to claim 10 , wherein
the first conductive film contains a polycrystalline semiconductor containing an impurity, and the second conductive film contains a polycrystalline semiconductor containing an impurity and carbon, and
an average grain size of the polycrystalline semiconductor in the second conductive film is smaller than an average grain size of the polycrystalline semiconductor in the first conductive film.
18 . The semiconductor memory device according to claim 17 , wherein the polycrystalline semiconductor is polysilicon.