IP Library › Granted Patent US 12,488,750
Granted Patent B2
US 12,488,750 · App. 18/596,777 · Granted Dec 2, 2025

Display device

Inventors: Hyang A Park (Yongin-si, KR); Sang Woo Kim (Yongin-si, KR); Jung Woo Park (Yongin-si, KR); Soo Yeong Hong (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
G09G3/3233G06V40/1318H10K39/34H10K59/1213G09G2300/0426G09G2300/0819G09G2300/0852G09G2300/0861G09G2310/08G09G2354/00G09G2360/14
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Quick Facts
Patent No.
US 12,488,750
App. No.
18/596,777
Granted
Dec 2, 2025
Kind
B2
Abstract

A display device may include photo sensors connected to a readout line. Each of the photo sensors may include: a light receiving element; a first sensor transistor configured to control current flowing to the readout line in response to a voltage of one electrode of the light receiving element; and a second sensor transistor electrically connected between the first sensor transistor and the readout line. The first sensor transistor may include a silicon semiconductor. The second sensor transistor may include an oxide semiconductor.

Claims (51)

1 . A display device, comprising:

a pixel and a photo sensor,

wherein the pixel comprises:

a light emitting element,

a first transistor configured to control driving current flowing through the light emitting element in response to a voltage of a first node;

a second transistor configured to transmit a data signal from a data line to the first node in response to a scan signal provided to a first scan line;

a third transistor electrically connected between a gate electrode of the first transistor and one electrode of the first transistor, and including a gate electrode connected to a third scan line; and

a fourth transistor electrically connected between the gate electrode of the first transistor and a second power line, and including a gate electrode connected to a second scan line,

wherein each of the first transistor and the second transistor comprises a first type semiconductor, and

wherein each of the third transistor and the fourth transistor comprises a second type semiconductor different from the first type semiconductor,

wherein the photo sensor comprises:

a light receiving element;

a first sensor transistor configured to control current flowing to a readout line in response to a voltage of one electrode of the light receiving element; and

a second sensor transistor electrically connected between the first sensor transistor and the readout line,

wherein the first sensor transistor comprises the first type semiconductor, and

wherein the second sensor transistor comprises the second type semiconductor different from the first type semiconductor.

2 . The display device according to claim 1 , wherein:

the first sensor transistor comprises a silicon semiconductor, and

the second sensor transistor comprises an oxide semiconductor.

3 . The display device according to claim 2 , wherein a semiconductor layer of the second sensor transistor and a semiconductor layer of the first sensor transistor are disposed in different layers with at least one insulating layer interposed therebetween.

4 . The display device according to claim 1 , wherein:

the photo sensor is located between the pixel and an adjacent pixel disposed adjacent to the pixel in a first direction,

the readout line extends in a second direction, and

each of a semiconductor layer of the first sensor transistor and a semiconductor layer of the second sensor transistor extends in the second direction.

5 . The display device according to claim 4 , wherein a length of the semiconductor layer of the second sensor transistor in the second direction is greater than a width of the semiconductor layer of the second sensor transistor in the first direction.

6 . The display device according to claim 1 , wherein:

the photo sensor further comprises a third sensor transistor electrically connected between a reference power line and the one electrode of the light receiving element, the third sensor transistor including a gate electrode connected to a reset control line, and

the third sensor transistor comprises the second type semiconductor.

7 . The display device according to claim 1 , wherein a gate electrode of the second sensor transistor is connected to the second scan line.

8 . The display device according to claim 7 , wherein the second scan line comprises:

a first sub-scan line disposed under a semiconductor layer of the second sensor transistor, and

a second sub-scan line disposed over the semiconductor layer of the second sensor transistor.

9 . The display device according to claim 1 , wherein a gate electrode of the second sensor transistor is connected to the third scan line.

10 . The display device according to claim 1 , wherein a gate electrode of the second sensor transistor is connected to a fourth scan line different from the first to the third scan lines.

11 . The display device according to claim 1 , wherein the pixel further comprises a capacitor electrically connected between the first scan line and a gate electrode of the first transistor.

12 . The display device according to claim 11 , wherein the capacitor is formed by overlapping the first scan line and a semiconductor layer located in a same layer as a semiconductor layer of the second sensor transistor.

13 . An electronic device, comprising:

a display device comprising a pixel and a photo sensor,

wherein the pixel comprises:

a light emitting element;

a first transistor configured to control driving current flowing through the light emitting element in response to a voltage of a first node;

a second transistor electrically connected between a data line and a first electrode of the first transistor, and including a gate electrode connected to a first scan line;

a third transistor electrically connected between a gate electrode of the first transistor and a second electrode of the first transistor, and including a gate electrode connected to a third scan line; and

a fourth transistor electrically connected between the gate electrode of the first transistor and a second power line, and including a gate electrode connected to a second scan line,

wherein the photo sensor comprises:

a light receiving element;

a first sensor transistor configured to control current flowing to a readout line in response to a voltage of one electrode of the light receiving element; and

a second sensor transistor electrically connected between the first sensor transistor and the readout line, and

wherein a gate electrode of the second sensor transistor is connected to the second scan line or the third scan line.

14 . The electronic display device according to claim 13 , wherein the gate electrode of the second sensor transistor is connected to the second scan line.

15 . The electronic display device according to claim 13 , wherein the gate electrode of the second sensor transistor is connected to the third scan line.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2024
From: PARK, HYANG A; KIM, SANG WOO; PARK, JUNG WOO; HONG, SOO YEONG
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 066662/0781 →
Priority Claims (1)
KR 10-2023-0034398 · Mar 16, 2023 · national
Continuity (1)
Related Publication 20240312407A1 · Sep 19, 2024
References Cited (2)
US 20200051499A1 · Chung · 2020 [cited by examiner]
US 20210200366A1 · Bok · 2021 [cited by examiner]