METAL-CERAMIC MIXED PACKAGE SUBSTRATE PLATED WITH NON-MAGNETIC LAYER STACK
The disclosed technology generally relates to metallization of substrates, and more particularly to selective metallization of ceramic substrates without using a magnetic metal such as nickel (Ni). A ceramic package configured to house an electronic device. The ceramic package comprises a ceramic substrate and a non-magnetic metallization stack formed on the ceramic substrate. The non-magnetic metallization stack comprises a base metal layer formed on the ceramic substrate, a palladium (Pd)-based layer formed on the base metal layer, and a gold (Au)-based layer formed on the Pd-based layer. The non-magnetic metallization stack does not include a magnetic metal layer.
1 . A ceramic package configured to house an electronic device, the ceramic package comprising:
a ceramic substrate integrated with a non-magnetic metallization stack; and
the non-magnetic metallization stack comprising:
a base metal layer formed on the ceramic substrate,
a noble metal-containing layer formed over the base metal layer, and
a gold (Au)-based layer formed over the noble metal-containing layer,
wherein at least a portion of the non-magnetic metallization stack is embedded in the ceramic substrate.
2 . The ceramic package of claim 1 , wherein the base metal layer comprises a refractory metal.
3 . The ceramic package of claim 2 , wherein the refractory metal comprises one or both of tungsten (W) and molybdenum (Mo).
4 . The ceramic package of claim 1 , wherein the base metal layer comprises platinum (Pt).
5 . The ceramic package of claim 1 , wherein the noble metal-containing layer comprises palladium (Pd).
6 . The ceramic package of claim 1 , wherein the noble metal-containing layer is conformally plated on the base metal layer.
7 . The ceramic package of claim 1 , wherein the noble metal-containing layer is in direct contact with the Au-based layer without an intervening layer.
8 . The ceramic package of claim 1 , wherein the ceramic package does not include nickel (Ni) between the Au-based layer and the ceramic substrate.
9 . The ceramic package of claim 1 , wherein the ceramic substrate comprises at least one opening formed therethrough, and wherein the at least one opening is at least partly filled with the base metal layer.
10 . The ceramic package of claim 1 , wherein at least a portion of the base metal layer is embedded in the ceramic substrate.
11 . The ceramic package of claim 10 , wherein the base layer extends vertically through an entire thickness of the ceramic substrate.
12 . The ceramic package of claim 11 , wherein the base layer further extends horizontally on one or both of a front surface and a rear surface, opposite the front surface, of the ceramic substrate.
13 . The ceramic package of claim 1 , wherein at least a portion of the base metal layer and the ceramic substrate form a coplanar surface.
14 . The ceramic package of claim 1 , wherein the noble metal-containing layer comprises 4 wt. % or less of phosphorus (P) or boron (B).
15 . The ceramic package of claim 1 , wherein the noble metal-containing layer is free of one or both of phosphorus (P) and boron (B).
16 . The ceramic package of claim 1 , further comprising a lid, wherein the ceramic substrate defines a cavity configured to house the electronic device, wherein the lid is configured to hermetically seal the electronic device in the cavity, and wherein the base metal layer, the noble metal-containing layer, and the Au-based layer form a metallization stack serving as a sealant disposed between a rim of the cavity and the lid.
17 . The ceramic package of claim 1 , wherein each of opposing surfaces of the ceramic substrate has formed thereon the non-magnetic metallization stack.
18 . The ceramic package of claim 17 , wherein the non-magnetic metallization stacks on the opposing surfaces of the ceramic substate are connected by a common base metal layer extending through an entire thickness of the ceramic substrate.
19 . A method of forming a ceramic package configured to house an electronic device, the method comprising:
providing a ceramic substrate; and
forming a non-magnetic metallization stack on the ceramic substrate, wherein forming the non-magnetic metallization stack on the ceramic substrate comprises:
depositing a base metal layer on the ceramic substrate,
co-firing the ceramic substrate and base metal layer to form a co-fired substrate,
depositing a noble metal-containing layer on the co-fired substrate, and
depositing a gold-based layer on the noble metal-containing layer, wherein the ceramic package does not include a magnetic metal layer between the gold-based layer and the co-fired substrate.
20 . The method of claim 17 , wherein co-firing the ceramic substrate and the base metal layer comprises co-firing the ceramic substrate and the base metal layer at a temperature above 1000° C.
21 . The method of claim 20 , wherein co-firing the ceramic substrate and the base metal layer comprises co-firing the ceramic substrate and the base metal layer at a temperature above 1200° C.
22 . The method of claim 21 , wherein co-firing the ceramic substrate and the base metal layer comprises co-firing the ceramic substrate and the base metal layer at a temperature above 1400° C.
23 . The method of claim 17 , wherein the base metal comprises a refractory metal.
24 . The method of claim 23 , wherein the refractory metal comprises one or both of tungsten (W) and molybdenum (Mo).
25 . The method of claim 17 , wherein the noble metal-containing layer comprises palladium (Pd).
26 . The method of claim 17 , wherein the ceramic package does not include nickel (Ni) between the gold-based layer and the co-fired substrate.
27 . The method of claim 17 , further comprising:
before depositing the base metal layer over the ceramic substrate, forming at least one opening through the ceramic substrate, and wherein depositing the base metal layer over the ceramic material comprises depositing the base metal layer into the at least one opening.