SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
A sensor-embedded display panel includes a substrate, a plurality of light emitting elements on the substrate and configured to emit light of different wavelength spectra belonging to the visible light wavelength spectrum, and a plurality of sensors on the substrate and configured to selectively sense light of any one of a green wavelength spectrum and a red wavelength spectrum. Each of the sensors includes a photoelectric conversion layer that includes a first wavelength-selective photoelectric conversion material having a first maximum absorption wavelength in a wavelength range of about 500 nm to about 600 nm and a thickness of the buffer layer is about 20 nm to about 50 nm, or the photoelectric conversion layer includes a second wavelength-selective photoelectric conversion material having a second maximum absorption wavelength in a wavelength range of greater than about 600 nm and less than about 750 nm and a thickness of the buffer layer is about 70 nm to about 110 nm.
1 . A sensor-embedded display panel, the sensor-embedded display panel comprising:
a substrate,
a plurality of light emitting elements on the substrate, the plurality of light emitting elements configured to emit light of different wavelength spectra belonging to the visible light wavelength spectrum, and
a plurality of sensors on the substrate, the plurality of sensors being configured to selectively sense light of any one of a green wavelength spectrum and a red wavelength spectrum, wherein
the plurality of light emitting elements and the plurality of sensors are arranged in parallel along an in-plane direction of the substrate,
the plurality of light emitting elements and the plurality of sensors commonly comprise:
a common electrode configured to apply a common voltage,
a first common auxiliary layer under the common electrode, and
a second common auxiliary layer facing the first common auxiliary layer,
wherein each of the sensors comprises a photoelectric conversion layer and a buffer layer between the first common auxiliary layer and the second common auxiliary layer,
the photoelectric conversion layer comprises a first wavelength-selective photoelectric conversion material having a first maximum absorption wavelength in a wavelength range of greater than or equal to about 500 nm and less than or equal to about 600 nm, and a thickness of the buffer layer is greater than or equal to about 20 nm and less than or equal to about 50 nm, or
the photoelectric conversion layer comprises a second wavelength-selective photoelectric conversion material having a second maximum absorption wavelength in a wavelength range of greater than about 600 nm and less than or equal to about 750 nm, and a thickness of the buffer layer is greater than or equal to about 70 nm and less than or equal to about 110 nm.
2 . The sensor-embedded display panel of claim 1 , wherein the buffer layer is between the second common auxiliary layer and the photoelectric conversion layer.
3 . The sensor-embedded display panel of claim 2 , wherein
the second common auxiliary layer comprises a first hole transport material, and
the buffer layer comprises a second hole transport material.
4 . The sensor-embedded display panel of claim 1 , wherein
the photoelectric conversion layer comprises the first wavelength-selective photoelectric conversion material,
an extinction coefficient at the first maximum absorption wavelength of the first wavelength-selective photoelectric conversion material is greater than or equal to about 0.5, and
a refractive index at the first maximum absorption wavelength of the first wavelength-selective photoelectric conversion material is greater than or equal to about 2.0 and less than or equal to about 3.0.
5 . The sensor-embedded display panel of claim 4 , wherein a sum of thicknesses of the photoelectric conversion layer and the buffer layer is about 50 nm to about 100 nm.
6 . The sensor-embedded display panel of claim 1 , wherein
the photoelectric conversion layer comprises the second wavelength-selective photoelectric conversion material,
an extinction coefficient at the second maximum absorption wavelength of the second wavelength-selective photoelectric conversion material is greater than or equal to about 0.5, and
a refractive index at the second maximum absorption wavelength of the second wavelength-selective photoelectric conversion material is greater than or equal to about 2.0 and less than or equal to about 3.0.
7 . The sensor-embedded display panel of claim 6 , wherein a sum of thicknesses of the photoelectric conversion layer and the buffer layer is greater than or equal to about 100 nm and less than or equal to about 160 nm.
8 . The sensor-embedded display panel of claim 1 , wherein
each of the sensors further comprises a pixel electrode under the second common auxiliary layer, and
the pixel electrode includes a reflective electrode and the common electrode includes a semi-transmissive electrode.
9 . The sensor-embedded display panel of claim 1 , wherein a full width at half maximum (FWHM) of the absorption spectrum or EQE spectrum, respectively, of the sensor is narrower than FWHM of the respective absorption spectrum or EQE spectrum of the first wavelength-selective photoelectric conversion material or the second wavelength-selective photoelectric conversion material.
10 . The sensor-embedded display panel of claim 1 , wherein
the plurality of light emitting elements comprise:
a red light emitting element configured to emit light in a red wavelength spectrum,
a green light emitting element configured to emit light in a green wavelength spectrum, and
a blue light emitting element configured to emit light in a blue wavelength spectrum, and
wherein the sensor-embedded display panel comprises:
a plurality of red subpixels configured to display red and comprising the red light emitting element,
a plurality of green subpixels configured to display green and comprising the green light emitting element,
a plurality of blue subpixels configured to display blue and comprising the blue light emitting element, and
a plurality of sensor pixels including the sensor and configured to selectively sense light in the green wavelength spectrum.
11 . The sensor-embedded display panel of claim 1 , wherein
the plurality of light emitting element comprises:
a red light emitting element configured to emit light in a red wavelength spectrum,
a green light emitting element configured to emit light in a green wavelength spectrum, and
a blue light emitting element configured to emit light in a blue wavelength spectrum, and
wherein the sensor-embedded display panel comprises:
a plurality of red subpixels configured to display red and comprising the red light emitting element,
a plurality of green subpixels configured to display green and comprising the green light emitting element,
a plurality of blue subpixels configured to display blue and comprising the blue light emitting element, and
a plurality of sensor pixels including the sensor and configured to selectively sense light in the red wavelength spectrum.
12 . A sensor-embedded display panel, the sensor-embedded display panel comprising unit pixels repeatedly arranged,
wherein each of the unit pixels comprises:
at least one red subpixel configured to display red and comprising a red light emitting element,
at least one green subpixel configured to display green and comprising a green light emitting element,
at least one blue subpixel configured to display blue and comprising a blue light emitting element, and
a sensor pixel comprising a sensor configured to selectively sense light in the red wavelength spectrum, and
wherein the sensor comprises:
a reflective electrode and a semi-transmissive electrode facing each other,
a photoelectric conversion layer between the reflective electrode and the semi-transmissive electrode, the photoelectric conversion layer comprising a wavelength-selective photoelectric conversion material having a maximum absorption wavelength in a wavelength region of greater than about 600 nm and less than or equal to about 750 nm, and
a buffer layer between the reflective electrode and the semi-transmissive electrode, the buffer layer having a thickness of greater than or equal to about 70 nm and less than or equal to about 110 nm.
13 . The sensor-embedded display panel of claim 12 , wherein
an extinction coefficient at the maximum absorption wavelength of the wavelength-selective photoelectric conversion material is greater than or equal to about 0.5, and
a refractive index at the maximum absorption wavelength of the wavelength-selective photoelectric conversion material is greater than or equal to about 2.0 and less than or equal to about 3.0.
14 . The sensor-embedded display panel of claim 12 , wherein
the red light emitting element, the green light emitting element, the blue light emitting element, and the sensor commonly comprise:
a first common auxiliary layer comprising an electron transport material, and
a second common auxiliary layer comprising a first hole transport material, and
wherein the buffer layer comprises a second hole transport material.
15 . The sensor-embedded display panel of claim 14 , wherein
each of the red light emitting element, the green light emitting element, the blue light emitting element, and the sensor comprises:
a common electrode configured to apply a common voltage to the red light emitting element, the green light emitting element, the blue light emitting element, and the sensor, and
a pixel electrode facing the common electrode, and
wherein the pixel electrode includes a reflective electrode and the common electrode includes a semi-transmissive electrode.
16 . A sensor-embedded display panel, the sensor-embedded display panel comprising unit pixels repeatedly arranged,
wherein the unit pixels comprising:
at least one red subpixel configured to display red and comprising a red light emitting element,
at least one green subpixel configured to display green and comprising a green light emitting element,
at least one blue subpixel configured to display blue and comprising a blue light emitting element, and
a sensor pixel comprising a sensor configured to selectively sense light in the green wavelength spectrum, and
wherein the sensor comprises
a reflective electrode and a semi-transmissive electrode facing each other,
a photoelectric conversion layer between the reflective electrode and the semi-transmissive electrode, the photoelectric conversion layer comprising a wavelength-selective photoelectric conversion material having a maximum absorption wavelength in a wavelength region of greater than or equal to about 500 nm and less than or equal to about 600 nm, and
a buffer layer between the reflective electrode and the semi-transmissive electrode, the buffer layer having a thickness of greater than or equal to about 20 nm and less than or equal to about 50 nm.
17 . The sensor-embedded display panel of claim 16 , wherein
an extinction coefficient at the maximum absorption wavelength of the wavelength-selective photoelectric conversion material is greater than or equal to about 0.5, and
a refractive index at the maximum absorption wavelength of the wavelength-selective photoelectric conversion material is greater than or equal to about 2.0 and less than or equal to about 3.0.
18 . The sensor-embedded display panel of claim 16 , wherein
the red light emitting element, the green light emitting element, the blue light emitting element, and the sensor commonly comprise:
a first common auxiliary layer comprising an electron transport material, and
a second common auxiliary layer comprising a first hole transport material, and
wherein the buffer layer comprises a second hole transport material.
19 . The sensor-embedded display panel of claim 18 , wherein
each of the red light emitting element, the green light emitting element, the blue light emitting element, and the sensor comprises:
a common electrode configured to apply a common voltage to the red light emitting element, the green light emitting element, the blue light emitting element, and the sensor, and
a pixel electrode facing the common electrode, and
wherein the pixel electrode includes a reflective electrode and the common electrode includes a semi-transmissive electrode.
20 . An electronic device comprising the sensor-embedded display panel of claim 1 .