IP Library Granted Patent US 12,549,000
Granted Patent B2
US 12,549,000 · App. 18/606,918 · Granted Feb 10, 2026

Overvoltages protection circuit

Inventors: Jean-Michel Simonnet (Veretz, FR); Romain Pichon (Reugny, FR)
Assignee: STMicroelectronics International N.V.
H02H9/04H02H1/0007
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Quick Facts
Patent No.
US 12,549,000
App. No.
18/606,918
Granted
Feb 10, 2026
Kind
B2
Abstract

The present description concerns a circuit of protection against overvoltages appearing during a protection against overcurrents comprising: a first diode and a second diode having their cathodes coupled to a first node; a first transient voltage suppressor diode having its cathode coupled to a second node and having its anode coupled to the anode of the first diode; a thyristor having its cathode coupled to the anode of the second diode, having its anode coupled to the second node, and having its gate coupled to the anode of the first diode; and a switch having a first terminal coupled to the first node.

Claims (22)

1 . A circuit of protection against overvoltages appearing during a protection against overcurrents comprising:

a first diode and a second diode having their cathodes coupled to a first node;

a first transient voltage suppressor diode having its cathode coupled to a second node and having its anode coupled to an anode of the first diode;

a thyristor having its cathode coupled to the anode of the second diode, having its anode coupled to the second node, and having its gate coupled to the anode of the first diode; and

a switch having a first terminal coupled to the first node.

2 . The circuit of claim 1 , wherein the first diode is a PN-junction diode.

3 . The circuit of claim 1 , wherein the second diode is a Schottky diode.

4 . The circuit of claim 1 , wherein the second diode is a PN-junction diode.

5 . The circuit of claim 1 , wherein the first diode and the second diode have reverse bias voltages greater than a maximum power supply voltage.

6 . The circuit of claim 5 , wherein the maximum power supply voltage is greater than 14 V.

7 . The circuit of claim 1 , wherein a power supply voltage is adapted to being applied between a second terminal of the switch, different from the first terminal, and the second node.

8 . The circuit of claim 1 , wherein the first transient voltage suppressor diode has an avalanche voltage greater than a voltage delivered by a load.

9 . The circuit of claim 1 , further comprising at least one second transient voltage suppressor diode arranged in series between the cathode of the first transient voltage suppressor diode and the second node.

10 . The circuit of claim 1 , wherein the switch is one or a plurality of NMOS-type transistors.

11 . The circuit of claim 1 , wherein the switch is one or a plurality of PMOS-type transistors.

12 . The circuit of claim 1 , wherein a load is adapted to being connected between the first and second nodes.

13 . The circuit of claim 12 , wherein the load is a battery.

14 . The circuit of claim 1 , further comprising:

a third transient voltage suppressor diode having its cathode coupled to the first node; and

a third diode having its anode coupled to the anode of the third transient voltage suppressor diode, and having its cathode coupled to the second node.

15 . A voltage conversion device comprising the circuit of to claim 1 .

16 . A vehicle comprising the circuit of claim 1 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2024
From: STMICROELECTRONICS (TOURS) SAS
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 068744/0844 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 18, 2024
From: SIMONNET, JEAN-MICHEL; PICHON, ROMAIN
To: STMICROELECTRONICS (TOURS) SAS
Reel/Frame 066811/0941 →
Priority Claims (1)
FR 2303191 · Mar 31, 2023 · national
Continuity (1)
Related Publication 20240332955A1 · Oct 3, 2024
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