IP Library Granted Patent US 12,567,739
Granted Patent B2
US 12,567,739 · App. 17/988,173 · Granted Mar 3, 2026

Electrostatic protection circuit

Inventor: Masuhide Ikeda (Matsumoto, JP)
Assignee: SEIKO EPSON CORPORATION
H02H9/046H02H9/045
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Quick Facts
Patent No.
US 12,567,739
App. No.
17/988,173
Granted
Mar 3, 2026
Kind
B2
Abstract

A circuit device includes: a first terminal; a second terminal; a first thyristor circuit whose one end is coupled to the first terminal; a second thyristor circuit whose one end is coupled to the second terminal; and a voltage setting circuit that is shared by the first thyristor circuit and the second thyristor circuit and through which a current from the first thyristor circuit when the first thyristor circuit is turned on and a current from the second thyristor circuit when the second thyristor circuit is turned on flow. The voltage setting circuit sets a voltage at other end of the first thyristor circuit to a first voltage when the first thyristor circuit is turned on, and sets a voltage at other end of the second thyristor circuit to a second voltage when the second thyristor circuit is turned on.

Claims (54)

1 . A circuit device comprising:

a first terminal;

a second terminal;

a first thyristor circuit whose one end is coupled to the first terminal;

a second thyristor circuit whose one end is coupled to the second terminal; and

a voltage setting circuit that is shared by the first thyristor circuit and the second thyristor circuit and through which a current from the first thyristor circuit when the first thyristor circuit is turned on and a current from the second thyristor circuit when the second thyristor circuit is turned on flow, wherein

the voltage setting circuit sets a voltage at an other end of the first thyristor circuit to a first voltage when the first thyristor circuit is turned on, and sets a voltage at an other end of the second thyristor circuit to a second voltage when the second thyristor circuit is turned on,

wherein the voltage setting circuit is directly coupled to a trigger circuit coupled to a gate of the first thyristor circuit and a trigger circuit coupled to a gate of the second thyristor circuit,

the voltage setting circuit includes a first voltage clamping element to an n-th voltage clamping element coupled in series, wherein n is an integer of 2 or more,

an anode of the first voltage clamping element is coupled to a high potential-side power supply node.

2 . The circuit device according to claim 1 , wherein the first voltage and the second voltage are the same voltage.

3 . The circuit device according to claim 1 , wherein

the first voltage and the second voltage are different voltages.

4 . The circuit device according to claim 1 , wherein

the other end of the first thyristor circuit and the other end of the second thyristor circuit are coupled to the anode of the first voltage clamping element.

5 . The circuit device according to claim 4 , wherein

a cathode of the n-th voltage clamping element is coupled to a low potential-side power supply node.

6 . The circuit device according to claim 1 , wherein

the other end of the first thyristor circuit is coupled to an anode of an i-th voltage clamping element, the other end of the second thyristor circuit is coupled to an anode of a j-th voltage clamping element, i and j being integers satisfying 1≤i<j≤n.

7 . The circuit device according to claim 1 , wherein

the other end of the first thyristor circuit and the other end of the second thyristor circuit are coupled to a cathode of the n-th voltage clamping element.

8 . The circuit device according to claim 1 , wherein

at least one of the first voltage clamping element to the n-th voltage clamping element is a diode.

9 . The circuit device according to claim 1 , wherein

at least one of the first voltage clamping element to the n-th voltage clamping element is a PMOS transistor in which a source and a gate are coupled.

10 . The circuit device according to claim 1 , wherein

at least one of the first voltage clamping element to the n-th voltage clamping element is a pnp bipolar transistor in which a base and an emitter are coupled.

11 . The circuit device according to claim 1 , further comprising:

an electrostatic protection circuit between power supplies that is provided between a high potential-side power supply node and a low potential-side power supply node and that includes a third thyristor circuit, wherein

the voltage setting circuit is a voltage setting circuit that is provided in the electrostatic protection circuit and that is coupled to the third thyristor circuit.

12 . The circuit device according to claim 1 , wherein

a gate of the first thyristor circuit and a gate of the second thyristor circuit are coupled to a power supply terminal.

13 . The circuit device according to claim 1 , wherein

V max1 <V 1 +Vh ( TH ),

V max2 <V 2 +Vh ( TH ),

wherein a hold voltage of a thyristor TH of each of the first thyristor circuit and the second thyristor circuit is set to Vh(TH), the first voltage is set to V 1 , the second voltage is set to V 2 , a maximum operating voltage of the first terminal is set to Vmax 1 , and a maximum operating voltage of the second terminal is set to Vmax 2 .

14 . A circuit device comprising:

a first terminal;

a second terminal;

a first thyristor circuit whose one end is coupled to the first terminal;

a second thyristor circuit whose one end is coupled to the second terminal; and

a voltage setting circuit that is shared by the first thyristor circuit and the second thyristor circuit and through which a current from the first thyristor circuit when the first thyristor circuit is turned on and a current from the second thyristor circuit when the second thyristor circuit is turned on flow, wherein

the voltage setting circuit sets a voltage at an other end of the first thyristor circuit to a first voltage when the first thyristor circuit is turned on, and sets a voltage at an other end of the second thyristor circuit to a second voltage when the second thyristor circuit is turned on,

the voltage setting circuit includes a first voltage clamping element to an n-th voltage clamping element coupled in series, n being an integer of 2 or more,

the other end of the first thyristor circuit and the other end of the second thyristor circuit are coupled to a cathode of the n-th voltage clamping element, and

an anode of the first voltage clamping element is coupled to a high potential-side power supply node.

15 . A circuit device comprising:

a first terminal;

a second terminal;

a first thyristor circuit whose one end is coupled to the first terminal;

a second thyristor circuit whose one end is coupled to the second terminal; and

a voltage setting circuit that is shared by the first thyristor circuit and the second thyristor circuit and through which a current from the first thyristor circuit when the first thyristor circuit is turned on and a current from the second thyristor circuit when the second thyristor circuit is turned on flow, wherein

the voltage setting circuit sets a voltage at an other end of the first thyristor circuit to a first voltage when the first thyristor circuit is turned on, and sets a voltage at an other end of the second thyristor circuit to a second voltage when the second thyristor circuit is turned on, and

the voltage setting circuit is disposed between the first thyristor circuit and the second thyristor circuit in a plan view in a direction orthogonal to a substrate of the circuit device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2022
From: IKEDA, MASUHIDE
To: SEIKO EPSON CORPORATION
Reel/Frame 061794/0639 →
Priority Claims (1)
JP 2021-187665 · Nov 18, 2021 · national
Continuity (1)
Related Publication 20230155374A1 · May 18, 2023
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