Detection device
According to an aspect, a detection device includes: a substrate; and a plurality of optical sensors formed by stacking first and second lower electrodes, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode on the substrate in the order as listed. The first lower electrodes are arranged so as to be separated for each of the optical sensors. The second lower electrodes are provided so as to surround the first lower electrodes, respectively. The lower buffer layer, the active layer, the upper buffer layer, and the upper electrode are provided continuously over the optical sensors so as to cover the first and the second lower electrodes.
1. A detection device comprising:
a substrate;
a plurality of optical sensors formed by stacking first and second lower electrodes, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode on the substrate in the order as listed;
a potential supply wiring line configured to supply a predetermined potential to the second lower electrode; and
a first transistor configured to switch between coupling and non-coupling between the second lower electrode and the potential supply wiring line, wherein
the first lower electrodes are arranged so as to be separated for each of the optical sensors,
the second lower electrodes are provided so as to surround the first lower electrodes, respectively, and
the lower buffer layer, the active layer, the upper buffer layer, and the upper electrode are provided continuously over the optical sensors so as to cover the first and the second lower electrodes.
2. The detection device according to claim 1 , wherein
the optical sensors are arranged in a matrix having a row-column configuration on the substrate,
a second transistor is provided for each of the optical sensors so as to be coupled to the first lower electrode of the optical sensor, and
a gate line and a signal line are provided so as to be coupled to the second transistor.
3. The detection device according to claim 2 , comprising a detection circuit coupled to the first lower electrode of the optical sensor via the second transistor and the signal line, wherein
a common potential is applied to the upper electrode.
4. The detection device according to claim 1 , comprising a third transistor configured to switch between coupling and non-coupling between the first lower electrode and the second lower electrode.
5. A detection device comprising:
a substrate;
a plurality of optical sensors formed by stacking first and second lower electrodes, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode on the substrate in the order as listed;
a first transistor configured to switch between coupling and non-coupling between the first lower electrode and the second lower electrode;
a potential supply wiring line configured to supply a predetermined potential to the second lower electrode; and
a second transistor configured to switch between coupling and non-coupling between the second lower electrode and the potential supply wiring line,
wherein
the first lower electrodes are arranged so as to be separated for each of the optical sensors,
the second lower electrodes are provided so as to surround the first lower electrodes, respectively, and
the lower buffer layer, the active layer, the upper buffer layer, and the upper electrode are provided continuously over the optical sensors so as to cover the first and the second lower electrodes.
6. The detection device according to claim 5 , wherein
the optical sensors each have a first detection mode in which the first transistor is off and the second transistor is on, and
in the first detection mode, the first lower electrode is decoupled from the second lower electrode by the first transistor, and the second lower electrode is coupled to the potential supply wiring line via the second transistor.
7. The detection device according to claim 5 , wherein
the optical sensors each have a second detection mode in which the first transistor is on and the second transistor is off, and
in the second detection mode, the first lower electrode is coupled to the second lower electrode via the first transistor, and the second lower electrode is decoupled from the potential supply wiring line by the second transistor.
8. The detection device according to claim 5 , wherein
the optical sensors each have:
a first detection mode in which the first transistor is off and the second transistor is on; and
a second detection mode in which the first transistor is on and the second transistor is off, and
switching between the first detection mode and the second detection mode is performed based on input from an external switch.