Image sensor and manufacturing method thereof
An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
1. An image sensor, comprising:
a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other;
a pixel electrode disposed on the pixel sensing circuit, wherein the pixel electrode comprises a first electrode and a second electrode, the pixel electrode is electrically connected to the pixel sensing circuit, the first electrode and the second electrode are coplanar and have different polarities, and the first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region;
an opto-electrical conversion layer disposed on the pixel sensing circuit and the pixel electrode, wherein the opto-electrical conversion layer comprises a carrier transport layer and a photo sensing layer disposed on the carrier transport layer, the carrier transport layer is located between the photo sensing layer and the pixel electrode, an energy barrier formed between the carrier transport layer and the pixel electrode is larger than an operational voltage of the image sensor, and a bottom surface of the pixel electrode is aligned with or under a bottom surface of the opto-electrical conversion layer; and
a pixel isolation structure disposed on the pixel sensing circuit, wherein the opto-electrical conversion layer is located within the pixel isolation structure.
2. The image sensor according to claim 1 , further comprising:
a water-oxygen barrier film covering the pixel sensing circuit and the opto-electrical conversion layer.
3. The image sensor according to claim 1 , wherein a sidewall of the pixel isolation structure is substantially aligned with sides of the first electrode and the second electrode.
4. The image sensor according to claim 1 , wherein the pixel isolation structure is located on the first electrode and the second electrode.
5. The image sensor according to claim 1 , wherein the pixel isolation structure is located between the first electrode or the second electrode located in the first pixel region and the first electrode or the second electrode having the same polarity located in the second pixel region.
6. The image sensor according to claim 5 , wherein the pixel isolation structure is separated from the pixel electrode by a gap.
7. The image sensor according to claim 1 , wherein a top surface of the opto-electrical conversion layer is substantially aligned with a top surface of the pixel isolation structure.
8. The image sensor according to claim 1 , wherein the pixel sensing circuit comprises an electronic component, a plurality of metal layers, and a plurality of connection vias, and the first electrode and the second electrode are electrically connected to the metal layers and the electronic component through the connection vias by a shortest distance.
9. The image sensor according to claim 1 , wherein one of the first electrode and the second electrode surrounds the other one of the first electrode and the second electrode.