Foil-based metallization of solar cells
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
1. A solar cell, comprising:
a substrate;
a first semiconductor region in the substrate;
a second semiconductor region in the substrate;
a first metal seed material region on the first semiconductor region;
a second metal seed material region on the second semiconductor region, wherein the second metal seed region is laterally spaced apart from the first metal seed region; and
an anodized metal foil on the first metal seed material region and the second metal seed material region, the anodized metal foil comprising a first conductive portion laterally separated from a second conductive portion by a groove, and the anodized metal foil comprising an oxide layer along a bottom of the metal foil, along sides of the metal foil, and along a top of the metal foil.
2. The solar cell of claim 1 , wherein the oxide layer is not in the groove.
3. The solar cell of claim 1 , wherein the groove is vertically over a location between the first metal seed material region and the second metal seed material region.
4. The solar cell of claim 1 , wherein the groove is vertically over a location where the second semiconductor region meets the first semiconductor region.
5. The solar cell of claim 1 , wherein the first metal seed material region and the second metal seed material region comprise aluminum.
6. The solar cell of claim 1 , wherein the first conductive portion and the second conductive portion each have a thickness approximately in the range of 0.3 to 20 microns.
7. The solar cell of claim 1 , wherein the first conductive portion and the second conductive portion each comprise aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%.
8. The solar cell of claim 1 , wherein the oxide layer has a thickness approximately in the range of 1-20 microns.
9. The solar cell of claim 1 , wherein the oxide layer comprises aluminum oxide.
10. The solar cell of claim 1 , wherein the first and second semiconductor regions each comprise polycrystalline silicon.
11. A solar cell, comprising:
a substrate;
a first semiconductor region on a first thin dielectric layer on the substrate;
a second semiconductor region on a second thin dielectric layer on the substrate, wherein the second semiconductor region is laterally spaced apart from the first semiconductor region;
a first metal seed material region on the first semiconductor region;
a second metal seed material region on the second semiconductor region, wherein the second metal seed region is laterally spaced apart from the first metal seed region; and
an anodized metal foil on the first metal seed material region and the second metal seed material region, the anodized metal foil comprising a first conductive portion laterally separated from a second conductive portion by a groove, and the anodized metal foil comprising an oxide layer along a bottom of the metal foil, along sides of the metal foil, and along a top of the metal foil.
12. The solar cell of claim 11 , wherein the oxide layer is not in the groove.
13. The solar cell of claim 11 , wherein the groove is vertically over a location between the first metal seed material region and the second metal seed material region.
14. The solar cell of claim 11 , wherein the groove is vertically over a location between the second semiconductor region and the first semiconductor region.
15. The solar cell of claim 11 , wherein the first metal seed material region and the second metal seed material region comprise aluminum.
16. The solar cell of claim 11 , wherein the first conductive portion and the second conductive portion each have a thickness approximately in the range of 0.3 to 20 microns.
17. The solar cell of claim 11 , wherein the first conductive portion and the second conductive portion each comprise aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%.
18. The solar cell of claim 11 , wherein the oxide layer has a thickness approximately in the range of 1-20 microns.
19. The solar cell of claim 11 , wherein the oxide layer comprises aluminum oxide.
20. The solar cell of claim 11 , wherein the first and second semiconductor regions each comprise polycrystalline silicon.