Integrated circuit devices including arc protection diodes for memory structures
An integrated circuit device includes a peripheral circuit structure including a lower substrate, an arc protection diode in the lower substrate, and a common source line driver connected to the arc protection diode, a conductive plate on the peripheral circuit structure, a cell array structure overlapping the peripheral circuit structure in a vertical direction with the conductive plate therebetween, and a first wiring structure connected between the arc protection diode and the conductive plate.
1 . A device comprising:
a substrate including a first surface;
a conductive plate disposed on the substrate;
a plurality of gate lines disposed on the conductive plate, and including a first gate line and a second gate line that is separated from the first gate line in a first direction substantially perpendicular to the first surface of the substrate;
a plurality of memory cells electrically connected to the plurality of gate lines and the conductive plate;
a protection diode disposed in the substrate, and including a first region of a first conductivity type and a second region of a second conductivity type;
a channel penetrating the plurality of gate lines and electrically connected to the conductive plate;
a contact electrically connected to the conductive plate and the protection diode, and disposed below the plurality of gate lines such that at least one of the plurality of gate lines vertically overlaps with the contact; and
a wiring structure including a first plug, a second plug, a first interconnecting layer and a second interconnecting layer,
wherein the first plug vertically overlaps with the first region of the protection diode, and is electrically connected to the first region of the protection diode,
the second plug is spaced apart from the first plug, and is electrically connected to the first region of the protection diode,
the first interconnecting layer is disposed on the first plug, and is electrically connected to the first plug,
the second interconnecting layer is disposed on the second plug, and is electrically connected to the second plug, and
the contact vertically overlaps with the protection diode, and is in contact with a lower surface of the conductive plate.
2 . The device of claim 1 , wherein the second plug vertically overlaps with the second region of the protection diode.
3 . The device of claim 1 , wherein the second plug is spaced apart from the second region of the protection diode.
4 . The device of claim 1 , wherein the wiring structure further includes a third plug electrically connected to the second region of the protection diode and vertically overlapping with the second region of the protection diode.
5 . The device of claim 1 , further comprising:
a source disposed in the substrate;
a drain disposed in the substrate; and
a charge storage layer disposed on the substrate,
wherein the first plug vertically overlaps with the drain.
6 . The device of claim 1 , further comprising a common source line driver disposed on the substrate and electrically connected to the protection diode.
7 . The device of claim 6 , wherein the common source line driver includes a source and a drain, and
an area of the source is different from an area of the drain.
8 . The device of claim 1 , further comprising a through electrode via penetrating the plurality of gate lines and the conductive plate, and electrically connected to the wiring structure.
9 . A device comprising:
a substrate including a first surface;
a conductive plate disposed on the substrate;
a plurality of gate lines disposed on the conductive plate, and including a first gate line and a second gate line that is separated from the first gate line in a first direction substantially perpendicular to the first surface of the substrate;
a plurality of memory cells electrically connected to the plurality of gate lines and the conductive plate;
a protection diode disposed in the substrate, and including a first region of a first conductivity type and a second region of a second conductivity type;
a channel penetrating the plurality of gate lines and electrically connected to the conductive plate;
a common source line driver disposed on the substrate and electrically connected to the protection diode; and
a wiring structure including a first plug, a second plug, a first interconnecting layer and a second interconnecting layer,
wherein the first plug vertically overlaps with the first region of the protection diode, is in contact with the first region of the protection diode, and is electrically connected to the first region of the protection diode,
the first interconnecting layer is electrically connected to the first plug,
the second interconnecting layer is electrically connected to the second plug,
the common source line driver includes a drain and a source, and
an area of the drain of the common source line driver is greater than an area of the source of the common source line driver.
10 . The device of claim 9 , wherein the second plug is spaced apart from the first region of the protection diode, and is electrically connected to the first region of the protection diode.
11 . The device of claim 9 , wherein the first interconnecting layer is disposed on an upper surface of the first plug, and
the second interconnecting layer is disposed on an upper surface of the second plug.
12 . The device of claim 9 , wherein a horizontal length of the first gate line is different from a horizontal length of the second gate line, and
the drain of the common source line driver is integrated with the first region of the protection diode.
13 . The device of claim 9 , further comprising a through electrode via penetrating the plurality of gate lines and the conductive plate, and electrically connected to the wiring structure.
14 . The device of claim 9 , further comprising a charge storage layer disposed on the substrate,
wherein the first plug is between the first region of the protection diode and the conductive plate.
15 . The device of claim 9 , further comprising a contact electrically connected to the conductive plate and the protection diode, and disposed below the plurality of gate lines such that at least one of the plurality of gate lines vertically overlaps with the contact.
16 . A device comprising:
a substrate including a first surface;
a conductive plate disposed on the substrate;
a plurality of gate lines disposed on the conductive plate, and including a first gate line and a second gate line disposed on the first gate line, a length of the first gate line being greater than a length of the second gate line;
a plurality of memory cells electrically connected to the plurality of gate lines and the conductive plate;
a channel penetrating the plurality of gate lines and electrically connected to the conductive plate;
an electrostatic discharge (ESD) circuit including a protection diode disposed in the substrate, and including a first region of a first conductivity type and a second region of a second conductivity type;
a wiring structure including a first plug, a second plug, a first interconnecting layer and a second interconnecting layer;
a through electrode via penetrating the plurality of gate lines and the conductive plate, and electrically connected to the wiring structure; and
a bit line on an upper surface of the through electrode via and electrically connected to the through electrode via,
wherein the first interconnecting layer is disposed on the first plug, and is electrically connected to the first plug,
the second interconnecting layer is disposed on the second plug, and is electrically connected to the second plug, and
the ESD circuit is configured to discharge accumulated charges to the substrate through the wiring structure and the protection diode.
17 . The device of claim 16 , further comprising:
a source disposed in the substrate;
a drain disposed in the substrate; and
a charge storage layer disposed on the substrate,
wherein an area of the source is different from an area of the drain, and
the first plug is in electrical contact with the drain and the protection diode.
18 . The device of claim 16 , further comprising a contact electrically connected to the conductive plate and the protection diode, and disposed below the plurality of gate lines such that at least one of the plurality of gate lines vertically overlaps with the contact,
wherein the contact vertically overlaps with the protection diode, and is in contact with a lower surface of the conductive plate.
19 . The device of claim 16 , wherein the wiring structure further includes a third plug electrically connected to the second region of the protection diode and vertically overlapping with the second region of the protection diode, and
the through electrode via is electrically connected between the bit line and a page buffer circuit.
20 . The device of claim 16 , wherein the first plug vertically overlaps with the first region of the protection diode, is in contact with the first region of the protection diode, and is electrically connected to the first region of the protection diode, and
the second plug is spaced apart from the first region of the protection diode, and is electrically connected to the first region of the protection diode.