MATERIALS AND PROCESSES FOR GENERATING RADIOISOTOPES
The present disclosure generally relates to materials, processes, generators, and/or systems, for generating radioisotope. The present disclosure also generally relates to ceramic materials comprising radioisotope suitable for use in a radioisotope generator. The present disclosure also generally relates to processes, generators and/or systems, for producing and capturing radioisotope. The present disclosure also generally relates to the preparation of radioisotope solutions for use in radiopharmacy and/or other clinical applications.
1 . A 228 Th-based generator for producing 212 Pb, comprising an inert oxide substrate comprising a 228 Th surface layer adhered thereto such that gaseous 220 Rn produced by decay of 228 Th emanates from the 228 Th surface layer, wherein the inert oxide substrate has a porosity in volume percentage of total volume of the inert oxide substrate of less than 10, and the 228 Th surface layer has average activity of at least 10 MBq per cm 2 ;
a chamber comprises a collection surface, which chamber is configured to house the tantalum oxide substrate in the chamber with the 228 Th surface layer in gaseous communication with the collection surface;
wherein,
the 228 Th surface layer permits emanation of gaseous 220 Rn into the chamber;
212 Pb produced by radioactive decay of the gaseous 220 Rn collects on the collection surface; and
the emanating gaseous 220 Rn contains less than 0.1% 228 Th
as a contaminant and/or the 212 Pb contains less than 0.1% 228 Th as a contaminant.
2 . The 228 Th-based generator of claim 1 , wherein the inert oxide substrate has a density of between 2 g/cm 3 to 15 g/cm 3 .
3 . The 228 Th-based generator of claim 1 , wherein the 228 Th surface layer contains 100 to 1500 MBq of 228 Th.
4 . The 228 Th-based generator of claim 1 , wherein the 228 Th surface layer has average activity of at least 100 MBq per cm 2 .
5 . The 228 Th-based generator of claim 1 , wherein inert oxide substrate has a substantially planar surface on which the 228 Th surface layer is disposed.
6 . A 228 Th-based generator for producing 212 Pb, comprising
an inert oxide substrate having a substantially planar surface comprising a 228 Th surface layer adhered thereto such that gaseous 220 Rn produced by decay of 228 Th emanates from the 228 Th surface layer, wherein the inert oxide substrate has a density of between 2 g/cm 3 to 15 g/cm 3 and a porosity in volume percentage of total volume of the inert oxide substrate of less than 10, and the 228 Th surface layer has average activity of at least 100 MBq per cm 2 ;
a chamber comprises a collection surface, which chamber is configured to house the tantalum oxide substrate in the chamber with the 228 Th surface layer in gaseous communication with the collection surface;
wherein,
the 228 Th surface layer permits emanation of gaseous 220 Rn into the chamber;
212 Pb produced by radioactive decay of the gaseous 220 Rn collects on the collection surface; and
the emanating gaseous 220 Rn contains less than 0.1% 228 Th
as a contaminant and/or the 212 Pb contains less than 0.1% 228 Th as a contaminant.
7 . A 220 Rn emanating inert oxide substrate comprising a 228 Th surface layer adhered thereto such that gaseous 220 Rn produced by decay of 228 Th emanates from the 228 Th surface layer, wherein the inert oxide substrate in volume percentage of total volume of the inert oxide substrate has a porosity of less than 10, and the 228 Th surface layer has average activity of at least 10 MBq per cm 2 .
8 . The 220 Rn emanating inert oxide substrate of claim 7 , wherein the 228 Th surface layer contains at least 200 MBq of 228 Th.
9 . A 220 Rn emanating inert oxide substrate having a substantially planar surface comprising a 228 Th surface layer adhered thereto such that gaseous 220 Rn produced by decay of 228 Th emanates from the 228 Th surface layer, wherein the inert oxide substrate has a density of between 2 g/cm 3 to 15 g/cm 3 and a porosity in volume percentage of total volume of the inert oxide substrate of less than 10, and the 228 Th surface layer has average activity of at least 100 MBq per cm 2 .
10 . The 220 Rn emanating inert oxide substrate of claim 9 , wherein the 228 Th surface layer contains at least 200 MBq of 228 Th.
11 . A 220 Rn emanating inert oxide substrate comprising at least 200 MBq of 228 Th disposed thereon forming a 228 Th layer, where the 228 Th layer permits emanation from the surface of the inert oxide substrate of gaseous 220 Rn produced by radioactive decay of 228 Th in the 228 Th layer, and the 228 Th layer is adhered to the inert oxide substrate such that the emanating gaseous 220 Rn contains less than 0.1% 228 Th as a contaminant.