Granted Patent B2

US 12,415,081 · App. 18/630,938 · Granted Sep 16, 2025

Inventors: Alexander Yeh (Los Altos Hills, CA); Timothy A. Fayram (Gilroy, CA)

Assignee: NEUSPERA MEDICAL INC.

A61N1/37229A61B5/0015A61B5/0031A61B5/0205A61B5/686A61B17/3468A61N1/0558A61N1/36A61N1/36125A61N1/372A61N1/37205A61N1/3787H04B5/79A61B5/01A61B5/067A61B5/14532A61B5/24A61B5/389A61B17/1128A61B18/0206A61B18/0218A61B2018/046A61B2560/0219A61N1/025A61N1/0464A61N1/0468A61N1/0534A61N1/0556A61N1/326A61N1/36002A61N1/36007A61N1/3601A61N1/36053A61N1/36057A61N1/36071A61N1/36107A61N1/3611A61N1/36117A61N1/36121A61N1/3754H02J50/12

Abstract

Claims (37)

1. An implantable system comprising:

a hermetic enclosure; and

a circuit assembly inside the hermetic enclosure, the circuit assembly comprising a proximal portion, a central portion, and a distal portion, wherein a first dielectric material layer comprises a portion of the proximal portion, the central portion, and the distal portion of the circuit assembly;

wherein the proximal portion comprises a first flexible region and one or more plated conductors;

wherein the distal portion comprises a second flexible region; and

wherein the central portion comprises one or more other dielectric material layers and one or more conductive material layers.

2. The implantable system of claim 1 , wherein the first dielectric material layer is a contiguous dielectric substrate that extends from a first end of the proximal portion to an opposite second end of the distal portion of the circuit assembly.

3. The implantable system of claim 2 , wherein a length of the circuit assembly from the first end to the opposite second end exceeds a length of the hermetic enclosure.

4. The implantable system of claim 2 , wherein the circuit assembly comprises a first conductive material layer disposed on the first dielectric material layer and the first conductive material layer comprises a portion of the proximal, central, and distal portions of the circuit assembly.

5. The implantable system of claim 4 , wherein the first conductive material layer comprises one or more of copper, silver, gold, titanium, platinum, aluminum, and steel.

6. The implantable system of claim 5 , wherein a length of the first dielectric material layer exceeds a length of the first conductive material layer.

7. The implantable system of claim 1 , wherein the distal portion of the circuit assembly comprises the second flexible region and one or more other plated conductors.

8. The implantable system of claim 7 , wherein the first and second flexible regions have different length characteristics.

9. The implantable system of claim 1 , wherein the first flexible region of the circuit assembly comprises an etched portion, wherein the etched portion has less rigidity than one or more other portions of the first flexible region.

10. The implantable system of claim 1 ,

wherein the hermetic enclosure includes:

a first end cap with a conductive first feedthrough coupled to the one or more plated conductors on the proximal portion of the circuit assembly; and

a second end cap with a conductive second feedthrough coupled to a conductor on the distal portion of the circuit assembly.

11. The implantable system of claim 1 , wherein the one or more plated conductors comprise one or more of silver, gold, and tin plated conductors.

12. A circuit assembly for an implantable device, the circuit assembly comprising:

a proximal portion comprising a first flexible region and one or more first plated conductors;

a distal portion comprising a second flexible region and one or more second plated conductors;

a rigid central portion comprising one or more other dielectric material layers and one or more conductive material layers; and

a first dielectric material layer comprising the proximal portion, the distal portion, and the rigid central portion of the circuit assembly.

13. The circuit assembly of claim 12 , wherein the first dielectric material layer is a contiguous dielectric substrate that extends from the proximal portion, through the central portion, and to the distal portion of the circuit assembly.

14. The circuit assembly of claim 13 , wherein the circuit assembly comprises a first conductive material layer disposed on the first dielectric material layer and the first conductive material layer comprises a portion of the proximal, central, and distal portions of the circuit assembly.

15. The circuit assembly of claim 14 , wherein the first conductive material layer comprises one or more of copper, silver, gold, titanium, platinum, aluminum, and steel.

16. The circuit assembly of claim 15 , wherein a length of the first dielectric material layer exceeds a length of the first conductive material layer.

17. The circuit assembly of claim 12 , wherein the first and second flexible regions have different length characteristics.

18. The circuit assembly of claim 12 , wherein the first flexible region of the circuit assembly comprises an etched portion, wherein the etched portion has less rigidity than one or more other portions of the first flexible region.

19. A circuit assembly for an implantable device, the circuit assembly comprising:

a proximal portion comprising a first flexible region and one or more first plated conductors;

a distal portion comprising a second flexible region and one or more second plated conductors;

a rigid central portion comprising one or more other dielectric material layers;

a first dielectric material layer comprising the proximal portion, the distal portion, and the rigid central portion of the circuit assembly; and

a first conductive material layer disposed on the first dielectric material layer and comprising the proximal portion, the distal portion, and the rigid central portion of the circuit assembly.

20. The circuit assembly of claim 19 , wherein the first dielectric material layer is a contiguous dielectric member that extends from the proximal portion, through the central portion, and to the distal portion of the circuit assembly.

Assignments (2)

Continuity (11)

References Cited (164)