Under-source body contact
The present disclosure relates to semiconductor structures and, more particularly, to under-body source contact structures and methods of manufacture. The structure includes: a gate structure on a semiconductor layer; a drift region within the semiconductor layer, below the gate structure; a body region within the semiconductor layer, below the gate structure; a contact region within the body region, the contact region being devoid of a silicide contact; and a silicide contact remote from the contact region within the semiconductor layer.
1. A structure comprising:
a gate structure on a semiconductor layer;
a drift region within the semiconductor layer, below the gate structure;
a body region within the semiconductor layer, below the gate structure;
a body contact within the body region, the body contact region being devoid of silicide;
interleaved contact regions abutting the body contact; and
a silicide contact remote from the body contact within the semiconductor layer,
wherein the drift region comprises an N-drift region, the body region comprises a P-body region and the body contact comprises an N-type region and the body contact is a source side body contact.
2. The structure of claim 1 , wherein the semiconductor layer is a top semiconductor layer of a semiconductor-on-insulator substrate.
3. The structure of claim 1 , wherein the contact regions comprise alternating N-type regions and P-type regions abutting the body region and the body contact.
4. The structure of claim 3 , wherein the contact regions comprise the silicide contact.
5. The structure of claim 4 , further comprising a silicide block on the body contact.
6. The structure of claim 5 , wherein the silicide block partially covers the contact regions adjacent to the body contact.
7. The structure of claim 4 , wherein the contact regions extend fully through the semiconductor layer.
8. A structure comprising:
a gate structure;
a drift region below the gate structure;
a body region below the gate structure;
a source-side body contact within the body region;
a silicide block over the source side body contact;
contact regions adjacent to the source-side body contact; and
a silicide contact on the contact regions remote from the source-side body contact within the body region,
wherein the drift region comprises an N-drift region, the body region comprises a P-body region, the source-side body contact comprises an N-type region and the contact regions comprise P+ and N+ regions.
9. The structure of claim 8 , wherein the drift region, the body region, the source-side body contact and the contact regions are different dopant regions with a semiconductor layer below the gate structure.
10. The structure of claim 9 , wherein the semiconductor layer comprises a top semiconductor layer of a semiconductor-on-insulator substrate.
11. The structure of claim 8 , wherein the P+ and N+ regions are alternating regions.
12. The structure of claim 8 , wherein the contact regions abut the body region and the source-side body contact.
13. The structure of claim 8 , wherein the silicide block extends onto the contact regions, adjacent to the source-side body contact.
14. The structure of claim 8 , wherein the silicide block extends onto the gate structure.
15. A method comprising:
forming a gate structure on a semiconductor layer;
forming a drift region within the semiconductor layer, below the gate structure;
forming a body region within the semiconductor layer, below the gate structure;
forming a body contact within the body region, the body contact region being devoid of silicide;
forming interleaved contact regions abutting the body contact; and
a silicide contact remote from the body contact within the semiconductor layer,
forming a silicide contact remote from the body contact within the semiconductor layer,
wherein the drift region comprises an N-drift region, the body region comprises a P-body region and the body contact comprises an N-type region and the body contact is a source side body contact.