Multi-layer dielectric refill for profile control in semiconductor devices
A semiconductor device and method of fabricating a semiconductor device involves formation of a trench above a fin (e.g. a fin of a FinFET device) of the semiconductor device and formation of a multi-layer dielectric structure within the trench. The profile of the multi-layer dielectric structure can be controlled depending on the application to reduce shadowing effects and reduce cut failure risk, among other possible benefits. The multi-layer dielectric structure can include two layers, three layers, or any number of layers and can have a stepped profile, a linear profile, or any other type of profile.
1. A semiconductor device comprising:
a fin extending upward; and
a dielectric structure formed above the fin, the dielectric structure comprising both a first dielectric layer, a second dielectric layer, and a third dielectric layer formed adjacent the second dielectric layer; and
wherein a width of a bottom region of the dielectric structure closest to the fin is greater than a width of a top region of the dielectric structure disposed above the bottom region, and wherein a width of the dielectric structure is less than a width of the fin.
2. The device of claim 1 , wherein the dielectric structure formed above the fin has a stepped profile as a result of a portion of the first dielectric layer having been removed.
3. The semiconductor device of claim 1 , wherein the fin extends above
an isolation structure; and
wherein a width of a middle region of the dielectric structure disposed above the bottom region is greater than a width of a top region of the dielectric structure disposed above the middle region.
4. A method of fabricating a semiconductor device, the method comprising:
forming a dummy gate structure;
forming a trench adjacent a fin of the semiconductor device;
forming a dielectric structure within the trench by forming both a first dielectric layer within the trench and a second dielectric layer within the trench; and
removing a portion of the first dielectric layer.
5. The method of claim 4 , wherein forming the trench adjacent the fin comprises removing a portion of the dummy gate structure.
6. The method of claim 4 , further comprising:
removing the dummy gate structure adjacent the dielectric structure; and
forming a metal gate structure adjacent the dielectric structure.
7. The method of claim 4 , wherein forming the dielectric structure within the trench further comprises forming a third dielectric layer within the trench.
8. The method of claim 7 , further comprising removing a portion of the second dielectric layer to control a profile of the dielectric structure, wherein:
removing the portion of the first dielectric layer comprises removing the portion of the first dielectric layer such that a width of a bottom region of the dielectric structure closest to the fin is greater than a width of a middle region of the dielectric structure disposed above the bottom region; and
removing the portion of the second dielectric layer to control the profile of the dielectric structure comprises removing the portion of the second dielectric layer such that the width of the middle region is greater than a width of a top region of the dielectric structure disposed above the middle region.
9. The method of claim 4 , wherein removing the portion of the first dielectric layer comprises removing the portion of the first dielectric layer such that a width of a bottom region of the dielectric structure closest to the fin is greater than a width of a top region of the dielectric structure disposed above the bottom region.
10. The method of claim 4 , wherein removing the portion of the first dielectric layer comprises removing the portion of the first dielectric layer such that a profile of the dielectric structure is a stepped profile.
11. A method of fabricating a semiconductor device, the method comprising:
forming a trench adjacent a fin of the semiconductor device;
forming a dielectric structure within the trench by forming a first dielectric layer within the trench, forming a second dielectric layer within the trench, and forming a third dielectric layer within the trench; and
removing a portion of the first dielectric layer.
12. The method of claim 11 , further comprising removing a portion of the second dielectric layer to control a profile of the dielectric structure.
13. The method of claim 12 , wherein:
removing the portion of the first dielectric layer comprises removing the portion of the first dielectric layer such that a width of a bottom region of the dielectric structure closest to the fin is greater than a width of a middle region of the dielectric structure disposed above the bottom region; and
removing the portion of the second dielectric layer to control the profile of the dielectric structure comprises removing the portion of the second dielectric layer such that the width of the middle region is greater than a width of a top region of the dielectric structure disposed above the middle region.
14. The method of claim 12 , wherein removing the portion of the first dielectric layer and removing the portion of the second dielectric layer to control the profile of the dielectric structure comprises removing the portion of the first dielectric and removing the portion of the second dielectric layer such that a width of a bottom region of the dielectric structure closest to the fin is greater than a width of a top region of the dielectric structure disposed above the bottom region.
15. The method of claim 11 , wherein forming the trench adjacent the fin comprises removing a portion of a dummy gate structure and a portion of a mask layer.
16. The method of claim 11 , wherein removing the portion of the first dielectric layer comprises removing the portion of the first dielectric layer such that the profile of the dielectric structure is a stepped profile or a linear profile.
17. The method of claim 4 , wherein the fin includes a semiconductor material.
18. The method of claim 4 , wherein the first dielectric layer and the second dielectric layer are formed by a re-fill process.
19. The method of claim 11 , wherein the fin includes a semiconductor material.
20. The method of claim 11 , wherein the first dielectric layer and the second dielectric layer are formed by a re-fill process.